Simulation of the Spin Field Effect Transistors: Effects of Tunneling and Spin Relaxation on its Performance

A numerical simulation of spin-dependent quantum transport for a spin field effect transistor (spinFET) is implemented in a widely used simulator nanoMOS. This method includes the effect of both spin relaxation in the channel and the tunneling barrier between the source/drain and the channel. Account for these factors permits setting more realistic performance limits for the transistor, especially the magnetoresistance, which is found to be lower compared to earlier predictions. The interplay between tunneling and spin relaxation is elucidated by numerical simulation. Insertion of the tunneling barrier leads to an increased magnetoresistance. Numerical simulations are used to explore the tunneling barrier design issues.Comment: 31 pages, 14 figures, submitted to Journal of Applied Physic

Kinetics of Recovery of the Dark-adapted Salamander Rod Photoresponse

The kinetics of the dark-adapted salamander rod photocurrent response to flashes producing from 10 to 105 photoisomerizations (Φ) were investigated in normal Ringer's solution, and in a choline solution that clamps calcium near its resting level. For saturating intensities ranging from ∼102 to 104 Φ, the recovery phases of the responses in choline were nearly invariant in form. Responses in Ringer's were similarly invariant for saturating intensities from ∼103 to 104 Φ. In both solutions, recoveries to flashes in these intensity ranges translated on the time axis a constant amount (τc) per e-fold increment in flash intensity, and exhibited exponentially decaying “tail phases” with time constant τc. The difference in recovery half-times for responses in choline and Ringer's to the same saturating flash was 5–7 s. Above ∼104 Φ, recoveries in both solutions were systematically slower, and translation invariance broke down. Theoretical analysis of the translation-invariant responses established that τc must represent the time constant of inactivation of the disc-associated cascade intermediate (R*, G*, or PDE*) having the longest lifetime, and that the cGMP hydrolysis and cGMP-channel activation reactions are such as to conserve this time constant. Theoretical analysis also demonstrated that the 5–7-s shift in recovery half-times between responses in Ringer's and in choline is largely (4–6 s) accounted for by the calcium-dependent activation of guanylyl cyclase, with the residual (1–2 s) likely caused by an effect of calcium on an intermediate with a nondominant time constant. Analytical expressions for the dim-flash response in calcium clamp and Ringer's are derived, and it is shown that the difference in the responses under the two conditions can be accounted for quantitatively by cyclase activation. Application of these expressions yields an estimate of the calcium buffering capacity of the rod at rest of ∼20, much lower than previous estimates

Simulation of phonon-assisted band-to-band tunneling in carbon nanotube field-effect transistors

Electronic transport in a carbon nanotube (CNT) metal-oxide-semiconductor field effect transistor (MOSFET) is simulated using the non-equilibrium Green's functions method with the account of electron-phonon scattering. For MOSFETs, ambipolar conduction is explained via phonon-assisted band-to-band (Landau-Zener) tunneling. In comparison to the ballistic case, we show that the phonon scattering shifts the onset of ambipolar conduction to more positive gate voltage (thereby increasing the off current). It is found that the subthreshold swing in ambipolar conduction can be made as steep as 40mV/decade despite the effect of phonon scattering.Comment: 13 pages, 4 figure

Ballisticity of nanotube FETs: Role of phonon energy and gate bias

We investigate the role of electron-phonon scattering and gate bias in degrading the drive current of nanotube MOSFETs. Our central results are: (i) Optical phonon scattering significantly decreases the drive current only when gate voltage is higher than a well-defined threshold. It means that elastic scattering mechanisms are most detrimental to nanotube MOSFETs. (ii) For comparable mean free paths, a lower phonon energy leads to a larger degradation of drive current. Thus for semiconducting nanowire FETs, the drive current will be more sensitive than carbon nanotube FETs because of the smaller phonon energies in semiconductors. (iii) Radial breathing mode phonons cause an appreciable reduction in drive current.Comment: 16 pages, 1 table, 4 figure

Broadband optical gain via interference in the free electron laser: principles and proposed realizations

We propose experimentally simplified schemes of an optically dispersive interface region between two coupled free electron lasers (FELs), aimed at achieving a much broader gain bandwidth than in a conventional FEL or a conventional optical klystron composed of two separated FELs. The proposed schemes can {\it universally} enhance the gain of FELs, regardless of their design when operated in the short pulsed regime