Application of nanophotonics to the next generation of surface-emitting lasers

Novel trends and concepts in the design and fabrication of vertical cavity surface-emitting lasers (VCSELs) and their integration in optical networks and implementation in integrated photonics applications are discussed. To serve these goals and match the growing bandwidth demands, significant changes are to be implemented in the device design. New lateral leakage-mediated single-mode VCSELs, including both devices confined by oxide layers and those confined by alloy-intermixed regions, are likely to be good candidates for light sources for the data networks of the future. An overview of the records in VCSEL transmission distances and transmission speeds is discussed in this context

Advanced methods for strain measurement in crystalline nanomaterials: application to multilayer InAlGaP quantum dots formed on high-index (11l)GaAs substrates”

International audienc

Advanced methods for strain measurement in crystalline nanomaterials: application to multilayer InAlGaP quantum dots formed on high-index (11l)GaAs substrates”

International audienc

Quantum dot 850 nm VCSELs with extreme high temperature stability operating at bit rates up to 25 Gbit/s at 150 °C

International audienc

Room-temperature yellow-orange (In,Ga,Al)P–GaP laser diodes grown on (n11) GaAs substrates

International audienceWe report room temperature injection lasing in the yellow–orange spectral range (599–605 nm) in (Al x Ga 1–x) 0.5 In 0.5 P–GaAs diodes with 4 layers of tensile-strained In y Ga 1–y P quantum dot-like insertions. The wafers were grown by metal–organic vapor phase epitaxy side-by-side on (811), (211) and (322) GaAs substrates tilted towards the direction with respect to the (100) surface. Four sheets of GaP-rich quantum barrier insertions were applied to suppress leakage of non-equilibrium electrons from the gain medium. Laser diodes having a threshold current densities of ~7–10 kA/cm 2 at room temperature were realized for both (211) and (322) surface orientations at cavity lengths of ~1mm. Emission wavelength at room temperature ~600 nm is shorter by ~8 nm than previously reported. As an opposite example, the devices grown on (811) GaAs substrates did not show lasing at room temperature