21 research outputs found
Application of nanophotonics to the next generation of surface-emitting lasers
Novel trends and concepts in the design and fabrication of vertical cavity surface-emitting lasers (VCSELs) and their integration in optical networks and implementation in integrated photonics applications are discussed. To serve these goals and match the growing bandwidth demands, significant changes are to be implemented in the device design. New lateral leakage-mediated single-mode VCSELs, including both devices confined by oxide layers and those confined by alloy-intermixed regions, are likely to be good candidates for light sources for the data networks of the future. An overview of the records in VCSEL transmission distances and transmission speeds is discussed in this context
Advanced methods for strain measurement in crystalline nanomaterials: application to multilayer InAlGaP quantum dots formed on high-index (11l)GaAs substratesâ
International audienc
Advanced methods for strain measurement in crystalline nanomaterials: application to multilayer InAlGaP quantum dots formed on high-index (11l)GaAs substratesâ
International audienc
Quantum dot 850âŻnm VCSELs with extreme high temperature stability operating at bit rates up to 25âŻGbit/s at 150âŻÂ°C
International audienc
Room-temperature yellow-orange (In,Ga,Al)PâGaP laser diodes grown on (n11) GaAs substrates
International audienceWe report room temperature injection lasing in the yellowâorange spectral range (599â605 nm) in (Al x Ga 1âx) 0.5 In 0.5 PâGaAs diodes with 4 layers of tensile-strained In y Ga 1ây P quantum dot-like insertions. The wafers were grown by metalâorganic vapor phase epitaxy side-by-side on (811), (211) and (322) GaAs substrates tilted towards the direction with respect to the (100) surface. Four sheets of GaP-rich quantum barrier insertions were applied to suppress leakage of non-equilibrium electrons from the gain medium. Laser diodes having a threshold current densities of ~7â10 kA/cm 2 at room temperature were realized for both (211) and (322) surface orientations at cavity lengths of ~1mm. Emission wavelength at room temperature ~600 nm is shorter by ~8 nm than previously reported. As an opposite example, the devices grown on (811) GaAs substrates did not show lasing at room temperature