Mixed-halide perovskites solar cells through PbICl and PbCl2 precursor films by sequential chemical vapor deposition

Mixed halide perovskites with chlorine (Cl) content have received significant interest due to better charge transport properties and longer diffusion length compared to pure iodine-based perovskites. The superior properties of Cl-doped perovskites improve solar cell device performance, although the quantification of Cl composition in the perovskite films remain difficult to achieve. Hence, it is difficult to correlate the Cl-quantity with the improved device performance. In this work, we deposited Cl-doped perovskite films through a facile three- and two-step sequential chemical vapor deposition (CVD) where lead halide films were deposited in the first steps of the process and subsequently converted to perovskites. No Cl substitution by iodine was observed during a sequential deposition of lead chloride and lead iodide films which reacted to form a lead chloride iodide phase (PbICl). The substitution of Cl by iodine ions only occurred during the conversion to perovskite phase

Controlled Deposition of Lead Iodide and Lead Chloride Thin Films by Low-Pressure Chemical Vapor Deposition

Lead halide thin films, such as lead iodide (PbI2) and lead chloride (PbCl2), are used as precursor films for perovskite preparation, which is frequently achieved by vacuum thermal evaporation but rarely by the low-pressure chemical vapor deposition (CVD) method. Here, we report on the deposition of PbI2 and PbCl2 thin films on glass substrates by employing the low-pressure CVD method. The effect of the substrate temperature on the structure and morphology of the lead halide films is investigated. Crystalline films were realized for both lead halides, with PbI2 films showing high texture compared to the reduced texture of the PbCl2 films. Large lateral grain sizes were observed for the PbI2 films with a flat platelet grain morphology and an average grain size up to 734.2 ± 144.8 nm. PbCl2 films have columnar grains with an average grain size up to 386.7 ± 119.5 nm. The PbI2 films showed a band gap of about 2.4 eV, confirming its semiconducting properties, and the PbCl2 had a wide band gap of 4.3 eV, which shows the insulating properties of this material