1 research outputs found
500 V breakdown voltage in βâGa2O3 laterally diffused metalâoxideâsemiconductor fieldâeffect transistor with 108 MW/cm2 power figure of merit
Abstract The authorsâ present a siliconâonâinsulator (SOI) laterally diffused metalâoxideâsemiconductor fieldâeffect transistor (LDMOSFET) with βâGa2O3 , which is a large bandgap semiconductor (βâLDMOSFET), for increasing breakdown voltage (VBR) and power figure of merit. The fundamental purpose is to use a βâGa2O3 semiconductor instead of silicon material due to its large breakdown field. The characteristics of βâLDMOSFET are analysed to those of standard LDMOSFET, such as VBR, ONâresistance (RON), power figure of merit (PFOM), and radio frequency (RF) performances. The effects of RF, such as gateâdrain capacitance (CGD), gateâsource capacitance (CGS), transit frequency (fT), and maximum frequency of oscillation (fMAX) have been investigated. The βâLDMOSFET structure outperforms performance in the VBR by increasing it to 500 versus 84.4 V in standard LDMOSFET design. The suggested βâLDMOSFET has RON ~ 2.3 mâŚ.cmâ2 and increased the PFOM (VBR2/RON) to 108.6 MW/cm2. All the simulations are done with TCAD and simulation models are calibrated with the experimental data