Fluorinated Graphene Dielectric and Functional Layers for Electronic Applications

Future electronics technology is expected to develop from rigid to flexible devices. This process requires breakthroughs in material properties, especially flexibility, in combination with desirable electrical insulating, semiconducting, or metallic properties. Graphene, being one of the recently developed two-dimensional (2D) materials, presents great promise as an active layer in a wide spectrum of electronics devices and, first of all, in field-effect transistors (FET). The development of optimized dielectrics for the graphene active layer is critical for graphene applications. The carrier transport in graphene films takes place at interfaces with dielectric or semiconductor substrates; therefore, the quality of such interface and the interaction of graphene films with nearby dielectric layers (charge carrier scattering) determine the device performance. Generally, the development of dielectric materials aiming at high performance device operation, proper mechanical properties, and low-temperature fabrication is not progressing well since the graphene thin film is very sensitive to surface conditions of dielectric layers. Solving the problem with dielectric layers in the case of nonorganic printed and flexible electronics is especially acute. As it is demonstrated in the present chapter, dielectric layers fabricated from fluorinated graphene suspension or in its combination with graphene oxide are the most promising for graphene-based flexible, printed, and transparent electronics

Memristive FG–PVA Structures Fabricated with the Use of High Energy Xe Ion Irradiation

A new approach based on the irradiation by heavy high energy ions (Xe ions with 26 and 167 MeV) was used for the creation of graphene quantum dots in the fluorinated matrix and the formation of the memristors in double-layer structures consisting of fluorinated graphene (FG) on polyvinyl alcohol (PVA). As a result, memristive switchings with an ON/OFF current relation ~2–4 orders of magnitude were observed in 2D printed crossbar structures with the active layer consisting of dielectric FG films on PVA after ion irradiation. All used ion energies and fluences (3 × 1010 and 3 × 1011 cm−2) led to the appearance of memristive switchings. Pockets with 103 pulses through each sample were passed for testing, and any changes in the ON/OFF current ratio were not observed. Pulse measurements allowed us to determine the time of crossbar structures opening of about 30–40 ns for the opening voltage of 2.5 V. Thus, the graphene quantum dots created in the fluorinated matrix by the high energy ions are a perspective approach for the development of flexible memristors and signal processing

Visualization of Swift Ion Tracks in Suspended Local Diamondized Few-Layer Graphene

In the present study we investigated the nanostructuring processes in locally suspended few-layer graphene (FLG) films by irradiation with high energy ions (Xe, 26–167 MeV). For such an energy range, the main channel of energy transfer to FLG is local, short-term excitation of the electronic subsystem. The irradiation doses used in this study are 1 × 1011–5 × 1012 ion/cm2. The structural transformations in the films were identified by Raman spectroscopy and transmission electron microscopy. Two types of nanostructures formed in the FLG films as a result of irradiation were revealed. At low irradiation doses the nanostructures were formed preferably at a certain distance from the ion track and had the form of 15–35 nm “bunches”. We assumed that the internal mechanical stress that arises due to the excited atoms ejection from the central track part creates conditions for the nanodiamond formation near the track periphery. Depending on the energy of the irradiating ions, the local restructuring of films at the periphery of the ion tracks can lead either to the formation of nanodiamonds (ND) or to the formation of AA’ (or ABC) stacking. The compressive strain value and pressure at the periphery of the ion track were estimated as ~0.15–0.22% and ~0.8–1.2 GPa, respectively. The main novel results are the first visualization of ion tracks in graphene in the form of diamond or diamond-like rings, the determination of the main condition for the diamond formation (the absence of a substrate in combination with high ion energy), and estimates of the local strain at the track periphery. Generally, we have developed a novel material and have found how to control the film properties by introducing regions similar to quantum dots with the diamond interface in FLG films

Visualization of Swift Ion Tracks in Suspended Local Diamondized Few-Layer Graphene

In the present study we investigated the nanostructuring processes in locally suspended few-layer graphene (FLG) films by irradiation with high energy ions (Xe, 26–167 MeV). For such an energy range, the main channel of energy transfer to FLG is local, short-term excitation of the electronic subsystem. The irradiation doses used in this study are 1 × 1011–5 × 1012 ion/cm2. The structural transformations in the films were identified by Raman spectroscopy and transmission electron microscopy. Two types of nanostructures formed in the FLG films as a result of irradiation were revealed. At low irradiation doses the nanostructures were formed preferably at a certain distance from the ion track and had the form of 15–35 nm “bunches”. We assumed that the internal mechanical stress that arises due to the excited atoms ejection from the central track part creates conditions for the nanodiamond formation near the track periphery. Depending on the energy of the irradiating ions, the local restructuring of films at the periphery of the ion tracks can lead either to the formation of nanodiamonds (ND) or to the formation of AA’ (or ABC) stacking. The compressive strain value and pressure at the periphery of the ion track were estimated as ~0.15–0.22% and ~0.8–1.2 GPa, respectively. The main novel results are the first visualization of ion tracks in graphene in the form of diamond or diamond-like rings, the determination of the main condition for the diamond formation (the absence of a substrate in combination with high ion energy), and estimates of the local strain at the track periphery. Generally, we have developed a novel material and have found how to control the film properties by introducing regions similar to quantum dots with the diamond interface in FLG films

Graphene: Hexagonal Boron Nitride Composite Films with Low-Resistance for Flexible Electronics

The structure and electric properties of hexagonal boron nitride (h-BN):graphene composite with additives of the conductive polymer PEDOT:PSS and ethylene glycol were examined. The graphene and h-BN flakes synthesized in plasma with nanometer sizes were used for experiments. It was found that the addition of more than 10−3 mass% of PEDOT:PSS to the graphene suspension or h-BN:graphene composite in combination with ethylene glycol leads to a strong decrease (4–5 orders of magnitude, in our case) in the resistance of the films created from these suspensions. This is caused by an increase in the conductivity of PEDOT:PSS due to the interaction with ethylene glycol and synergetic effect on the composite properties of h-BN:graphene films. The addition of PEDOT:PSS to the h-BN:graphene composite leads to the correction of the bonds between nanoparticles and a weak change in the resistance under the tensile strain caused by the sample bending. A more pronounced flexibility of the composite films with tree components is demonstrated. The self-organization effects for graphene flakes and polar h-BN flakes lead to the formation of micrometer sized plates in drops and uniform-in-size nanoparticles in inks. The ratio of the components in the composite was found for the observed strong hysteresis and a negative differential resistance. Generally, PEDOT:PSS and ethylene glycol composite films are promising for their application as electrodes or active elements for logic and signal processing

Synthesis, Crystal Structure, and Liquid Exfoliation of Layered Lanthanide Sulfides KLn(2)CuS(6) (Ln = La, Ce, Pr, Nd, Sm)

International audienceAmong the great amount of known lanthanide nanoparticles, reports devoted to chalcogenide ones are deficient. The properties of such nanoparticles remain almost unknown due to the lack of simple and proper synthetic methods avoiding hydrolysis and allowing preparation of oxygen-free lanthanide nanoparticles. A liquid exfoliation method was used to select the optimum strategy for the preparation of quaternary lanthanide sulfide nanoparticles. Bulk KLn(2)CuS(6) (Ln = La-Sm) materials were obtained via a reactive flux method. The crystal structures of three new members of the KLn(2)CuS(6) series were determined for Pr, Nd, and Sm as well as for known KLa2CuS6. KLn(2)CuS(6) (Ln = La, Pr, Nd) compounds crystallize in the monoclinic C2/c space group, whereas KSm2CuS6 crystallizes in the orthorhombic Fddd space group. The analysis of their electronic structures confirms that the main bonding interactions occur within the anionic {Ln(2)CuS(6)}(-) layers. Due to their layered structure, exfoliation of these compounds is possible using ultrasonic treatment in appropriate solvents with the formation of colloidal solutions. Colloidal particles show a plate-like morphology with a lateral size of 100-200 nm and a thickness of 2-10 nm. Highly negative or positive charges found in isopropanol and acetonitrile dispersions, respectively, are associated with high stability and concentration of the dispersions