722 research outputs found
Step Bunching with Alternation of Structural Parameters
By taking account of the alternation of structural parameters, we study
bunching of impermeable steps induced by drift of adatoms on a vicinal face of
Si(001). With the alternation of diffusion coefficient, the step bunching
occurs irrespective of the direction of the drift if the step distance is
large. Like the bunching of permeable steps, the type of large terraces is
determined by the drift direction. With step-down drift, step bunches grows
faster than those with step-up drift. The ratio of the growth rates is larger
than the ratio of the diffusion coefficients. Evaporation of adatoms, which
does not cause the step bunching, decreases the difference. If only the
alternation of kinetic coefficient is taken into account, the step bunching
occurs with step-down drift. In an early stage, the initial fluctuation of the
step distance determines the type of large terraces, but in a late stage, the
type of large terraces is opposite to the case of alternating diffusion
coefficient.Comment: 8pages, 16 figure
Molecules participating in insect immunity of Sarcophaga peregrina
Pricking the body wall of Sarcophaga
peregrina (flesh fly) larvae with a needle activated the immune system of this insect and induced various immune molecules, including antibacterial proteins, in the hemolymph. In this review, I summarize and discuss the functions of these immune molecules, with particular emphasis on the dual roles of some of these molecules in defense and development
Single-electron transistor effect in a two-terminal structure
A peculiarity of the single-electron transistor effect makes it possible to
observe this effect even in structures lacking a gate electrode altogether. The
proposed method can be useful for experimental study of charging effects in
structures with an extremely small central island confined between tunnel
barriers like a nanometer-sized quantum dot or a macromolecule probed with a
tunneling microscope), where it is impossible to provide a gate electrode for
control of the tunnel current.Comment: 5 pages, 2 figure
Investigation of marmoset hybrids (Cebuella pygmaea x Callithrix jacchus) and related Callitrichinae (Platyrrhini) by cross-species chromosome painting and comparative genomic hybridization
We report on the cytogenetics of twin offspring from an interspecies cross in marmosets (Callitrichinae, Platyrrhini), resulting from a pairing between a female Common marmoset (Callithrix jacchus, 2n = 46) and a male Pygmy marmoset (Cebuella pygmaea, 2n = 44). We analyzed their karyotypes by multi-directional chromosome painting employing human, Saguinus oedipus and Lagothrix lagothricha chromosome-specific probes. Both hybrid individuals had a karyotype with a diploid chromosome number of 2n = 45. As a complementary tool, interspecies comparative genomic hybridization (iCGH) was performed in order to screen for genomic imbalances between the hybrids and their parental species, and between Callithrix argentata and S. oedipus, respectively. Copyright (C) 2005 S. Karger AG, Basel
Two Dimensional Quantum Mechanical Modeling of Nanotransistors
Quantization in the inversion layer and phase coherent transport are
anticipated to have significant impact on device performance in 'ballistic'
nanoscale transistors. While the role of some quantum effects have been
analyzed qualitatively using simple one dimensional ballistic models, two
dimensional (2D) quantum mechanical simulation is important for quantitative
results. In this paper, we present a framework for 2D quantum mechanical
simulation of a nanotransistor / Metal Oxide Field Effect Transistor (MOSFET).
This framework consists of the non equilibrium Green's function equations
solved self-consistently with Poisson's equation. Solution of this set of
equations is computationally intensive. An efficient algorithm to calculate the
quantum mechanical 2D electron density has been developed. The method presented
is comprehensive in that treatment includes the three open boundary conditions,
where the narrow channel region opens into physically broad source, drain and
gate regions. Results are presented for (i) drain current versus drain and gate
voltages, (ii) comparison to results from Medici, and (iii) gate tunneling
current, using 2D potential profiles. Methods to reduce the gate leakage
current are also discussed based on simulation results.Comment: 12 figures. Journal of Applied Physics (to appear
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