India's Look/Act East Policy and the Northeast Region: A Critical Perspective

India's Look East Policy (LEP) signifies a strategic shift in its international political, economic, and military relationships. Regional integration of its Northeast Region (NER) with the countries in East, Southeast, and South Asia may potentially generate economic dividends to the region. However, there are formidable challenges in realising the potentials. The proposed infrastructure projects, if completed with no further delay, will go a long way in improving connectivity with the neighbouring countries. However, improving connectivity within the region and with the rest of the country is also very important. Further, it would require a comprehensive long-term plan with well-defined projects for developing industries and services including education, health and tourism. Building infrastructure, ensuring socio-political stability and ecological balance, and improving the quality of institutions would be a major part of this plan

Electrical Properties of Atomic Layer Deposited Aluminum Oxide on Gallium Nitride

We report on our investigation of the electrical properties of metal/Al2O3/GaN metal-insulator-semiconductor (MIS) capacitors. We determined the conduction band offset and interface charge density of the alumina/GaN interface by analyzing capacitance-voltage characteristics of atomic layer deposited Al2O3 films on GaN substrates. The conduction band offset at the Al2O3/GaN interface was calculated to be 2.13 eV, in agreement with theoretical predications. A non-zero field of 0.93 MV/cm in the oxide under flat-band conditions in the GaN was inferred, which we attribute to a fixed net positive charge density of magnitude 4.60x1012 cm-2 at the Al2O3/GaN interface. We provide hypotheses to explain the origin of this charge by analyzing the energy band line-up.Comment: 8 pages, 4 figures, Applied Physics Letter

New meaning for NLP: the trials and tribulations of natural language processing with GPT-3 in ophthalmology

Natural language processing (NLP) is a subfield of machine intelligence focused on the interaction of human language with computer systems. NLP has recently been discussed in the mainstream media and the literature with the advent of Generative Pre-trained Transformer 3 (GPT-3), a language model capable of producing human-like text. The release of GPT-3 has also sparked renewed interest on the applicability of NLP to contemporary healthcare problems. This article provides an overview of NLP models, with a focus on GPT-3, as well as discussion of applications specific to ophthalmology. We also outline the limitations of GPT-3 and the challenges with its integration into routine ophthalmic care

Polarization-engineered GaN/InGaN/GaN tunnel diodes

We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin (WKB) calculations were used to model and design tunnel junctions with narrow bandgap InGaN-based barrier layers. N-polar p-GaN/In0.33Ga0.67N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient zero bias tunneling turn-on with a high current density of 118 A/cm2 at a reverse bias of 1V, reaching a maximum current density up to 9.2 kA/cm2 were obtained. These results represent the highest current density reported in III-nitride tunnel junctions, and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.Comment: 3 pages, 3 figure