Raman-scattering study of the InGaN alloy over the whole composition range

We present Raman-scattering measurements on InxGa1−xN over the entire composition range of the alloy. The frequencies of the A1(LO) and E2 modes are reported and show a good agreement with the one-mode behavior dispersion predicted by the modified random-element isodisplacement model. The A1(LO) mode displays a high intensity relative to the E2 mode due to resonant enhancement. For above band-gap excitation, the A1(LO) peak displays frequency shifts as a function of the excitation energy due to selective excitation of regions with different In contents, and strong multiphonon scattering up to 3LO is observed in outgoing resonance conditions

Free-charge carrier parameters of n-type, p-type and compensated InN:Mg determined by Infrared Spectroscopic Ellipsometry

Infrared spectroscopic ellipsometry is applied to investigate the free-charge carrier properties of Mg-doped InN films. Two representative sets of In-polar InN grown by molecular beam epitaxy with Mg concentrations ranging from $1.2\times10^{17}$ cm$^{-3}$ to $8\times10^{20}$ cm$^{-3}$ are compared. P-type conductivity is indicated for the Mg concentration range of $1\times10^{18}$ cm$^{-3}$ to $9\times10^{19}$ cm$^{-3}$ from a systematic investigation of the longitudinal optical phonon plasmon broadening and the mobility parameter in dependence of the Mg concentration. A parameterized model that accounts for the phonon-plasmon coupling is applied to determine the free-charge carrier concentration and mobility parameters in the doped bulk InN layer as well as the GaN template and undoped InN buffer layer for each sample. The free-charge carrier properties in the second sample set are consistent with the results determined in a comprehensive analysis of the first sample set reported earlier [Sch\"oche et al., J. Appl. Phys. 113, 013502 (2013)]. In the second set, two samples with Mg concentration of $2.3\times10^{20}$ cm$^{-3}$ are identified as compensated n-type InN with very low electron concentrations which are suitable for further investigation of intrinsic material properties that are typically governed by high electron concentrations even in undoped InN. The compensated n-type InN samples can be clearly distinguished from the p-type conductive material of similar plasma frequencies by strongly reduced phonon plasmon broadening

High-pressure optical absorption in InN: Electron density dependence in the wurtzite phase and reevaluation of the indirect band gap of rocksalt InN

We report on high-pressure optical absorption measurements on InN epilayers with a range of free-electron concentrations (5×1017–1.6×1019 cm−3) to investigate the effect of free carriers on the pressure coefficient of the optical band gap of wurtzite InN. With increasing carrier concentration, we observe a decrease of the absolute value of the optical band gap pressure coefficient of wurtzite InN. An analysis of our data based on the k·p model allows us to obtain a pressure coefficient of 32 meV/GPa for the fundamental band gap of intrinsic wurtzite InN. Optical absorption measurements on a 5.7-μm-thick InN epilayer at pressures above the wurtzite-to-rocksalt transition have allowed us to obtain an accurate determination of the indirect band gap energy of rocksalt InN as a function of pressure. Around the phase transition (∼15 GPa), a band gap value of 0.7 eV and a pressure coefficient of ∼23 meV/GPa are obtained. ©2012 American Physical SocietyThis work was supported by the Spanish Ministry of Science and Innovation through Project No. MAT2010-16116.Ibáñez, J.; Segura, A.; García-Domene, B.; Oliva, R.; Manjón Herrera, FJ.; Yamaguchi, T.; Nanishi, Y.... (2012). High-pressure optical absorption in InN: Electron density dependence in the wurtzite phase and reevaluation of the indirect band gap of rocksalt InN. Physical Review B. 86:35210-1-35210-5. https://doi.org/10.1103/PhysRevB.86.035210S35210-135210-586Wu, J. (2009). When group-III nitrides go infrared: New properties and perspectives. Journal of Applied Physics, 106(1), 011101. doi:10.1063/1.3155798Ueno, M., Yoshida, M., Onodera, A., Shimomura, O., & Takemura, K. (1994). Stability of the wurtzite-type structure under high pressure: GaN and InN. Physical Review B, 49(1), 14-21. doi:10.1103/physrevb.49.14Uehara, S., Masamoto, T., Onodera, A., Ueno, M., Shimomura, O., & Takemura, K. (1997). Equation of state of the rocksalt phase of III–V nitrides to 72 GPa or higher. Journal of Physics and Chemistry of Solids, 58(12), 2093-2099. doi:10.1016/s0022-3697(97)00150-9Pinquier, C., Demangeot, F., Frandon, J., Chervin, J.-C., Polian, A., Couzinet, B., … Maleyre, B. (2006). Raman scattering study of wurtzite and rocksalt InN under high pressure. Physical Review B, 73(11). doi:10.1103/physrevb.73.115211Ibáñez, J., Manjón, F. J., Segura, A., Oliva, R., Cuscó, R., Vilaplana, R., … Artús, L. (2011). High-pressure Raman scattering in wurtzite indium nitride. Applied Physics Letters, 99(1), 011908. doi:10.1063/1.3609327Li, S. X., Wu, J., Haller, E. E., Walukiewicz, W., Shan, W., Lu, H., & Schaff, W. J. (2003). Hydrostatic pressure dependence of the fundamental bandgap of InN and In-rich group III nitride alloys. Applied Physics Letters, 83(24), 4963-4965. doi:10.1063/1.1633681Franssen, G., Gorczyca, I., Suski, T., Kamińska, A., Pereiro, J., Muñoz, E., … Svane, A. (2008). Bowing of the band gap pressure coefficient in InxGa1−xN alloys. Journal of Applied Physics, 103(3), 033514. doi:10.1063/1.2837072Kamińska, A., Franssen, G., Suski, T., Gorczyca, I., Christensen, N. E., Svane, A., … Georgakilas, A. (2007). Role of conduction-band filling in the dependence of InN photoluminescence on hydrostatic pressure. Physical Review B, 76(7). doi:10.1103/physrevb.76.075203Shan, W., Walukiewicz, W., Haller, E. E., Little, B. D., Song, J. J., McCluskey, M. D., … Stall, R. A. (1998). Optical properties of InxGa1−xN alloys grown by metalorganic chemical vapor deposition. Journal of Applied Physics, 84(8), 4452-4458. doi:10.1063/1.368669Millot, M., Geballe, Z. M., Yu, K. M., Walukiewicz, W., & Jeanloz, R. (2012). Red-green luminescence in indium gallium nitride alloys investigated by high pressure optical spectroscopy. Applied Physics Letters, 100(16), 162103. doi:10.1063/1.4704367Franssen, G., Suski, T., Perlin, P., Teisseyre, H., Khachapuridze, A., Dmowski, L. H., … Schaff, W. (2006). Band-to-band character of photoluminescence from InN and In-rich InGaN revealed by hydrostatic pressure studies. Applied Physics Letters, 89(12), 121915. doi:10.1063/1.2356994Ibáñez, J., Segura, A., Manjón, F. J., Artús, L., Yamaguchi, T., & Nanishi, Y. (2010). Electronic structure of wurtzite and rocksalt InN investigated by optical absorption under hydrostatic pressure. Applied Physics Letters, 96(20), 201903. doi:10.1063/1.3431291Cuscó, R., Ibáñez, J., Alarcón-Lladó, E., Artús, L., Yamaguchi, T., & Nanishi, Y. (2009). Raman scattering study of the long-wavelength longitudinal-optical-phonon–plasmon coupled modes in high-mobility InN layers. Physical Review B, 79(15). doi:10.1103/physrevb.79.155210Cuscó, R., Alarcón-Lladó, E., Ibáñez, J., Yamaguchi, T., Nanishi, Y., & Artús, L. (2009). Raman scattering study of background electron density in InN: a hydrodynamical approach to the LO-phonon–plasmon coupled modes. Journal of Physics: Condensed Matter, 21(41), 415801. doi:10.1088/0953-8984/21/41/415801Syassen, K. (2008). Ruby under pressure. High Pressure Research, 28(2), 75-126. doi:10.1080/08957950802235640Wu, J., Walukiewicz, W., Shan, W., Yu, K. M., Ager, J. W., Li, S. X., … Schaff, W. J. (2003). Temperature dependence of the fundamental band gap of InN. Journal of Applied Physics, 94(7), 4457-4460. doi:10.1063/1.1605815Wu, J., Walukiewicz, W., Li, S. X., Armitage, R., Ho, J. C., Weber, E. R., … Jakiela, R. (2004). Effects of electron concentration on the optical absorption edge of InN. Applied Physics Letters, 84(15), 2805-2807. doi:10.1063/1.1704853Wu, J., Walukiewicz, W., Shan, W., Yu, K. M., Ager, J. W., Haller, E. E., … Schaff, W. J. (2002). Effects of the narrow band gap on the properties of InN. Physical Review B, 66(20). doi:10.1103/physrevb.66.201403Rinke, P., Winkelnkemper, M., Qteish, A., Bimberg, D., Neugebauer, J., & Scheffler, M. (2008). Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN. Physical Review B, 77(7). doi:10.1103/physrevb.77.075202Furthmüller, J., Hahn, P. H., Fuchs, F., & Bechstedt, F. (2005). Band structures and optical spectra of InN polymorphs: Influence of quasiparticle and excitonic effects. Physical Review B, 72(20). doi:10.1103/physrevb.72.205106Serrano, J., Rubio, A., Hernández, E., Muñoz, A., & Mujica, A. (2000). Theoretical study of the relative stability of structural phases in group-III nitrides at high pressures. Physical Review B, 62(24), 16612-16623. doi:10.1103/physrevb.62.16612Christensen, N. E., & Gorczyca, I. (1994). Optical and structural properties of III-V nitrides under pressure. Physical Review B, 50(7), 4397-4415. doi:10.1103/physrevb.50.4397Duan, M.-Y., He, L., Xu, M., Xu, M.-Y., Xu, S., & Ostrikov, K. (Ken). (2010). Structural, electronic, and optical properties of wurtzite and rocksalt InN under pressure. Physical Review B, 81(3). doi:10.1103/physrevb.81.03310

Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces

Electron accumulation is found to occur at the surface of wurtzite (112¯0), (0001), and (0001¯) and zinc-blende (001) InN using x-ray photoemission spectroscopy. The accumulation is shown to be a universal feature of InN surfaces. This is due to the low Г-point conduction band minimum lying significantly below the charge neutrality level

Awaking of ferromagnetism in GaMnN through control of Mn valence

Room temperature ferromagnetism of GaMnN thin films is awaked by a mild hydrogenation treatment of samples synthesized by molecular beam epitaxy. Local environment of Mn atoms is monitored by Mn-L2,3 near edge x-ray absorption fine structure (NEXAFS) technique. Doped Mn ions are present at substitutional sites of Ga both before and after the hydrogenation. No secondary phase can be detected. Major valency of Mn changes from +3 to +2 by the hydrogenation. The present result supports the model that the ferromagnetism occurs when Mn2+ and Mn3+ are coexistent and holes in the mid- gap Mn band mediate the magnetic coupling.Comment: 12 pages, 5 figure

High-pressure Raman scattering in wurtzite indium nitride

Copyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.We perform Raman-scattering measurements at high hydrostatic pressures on c-face and a-face InN layers to investigate the high-pressure behavior of the zone-center optical phonons of wurtzite InN. Linear pressure coefficients and mode Grneisen parameters are obtained, and the experimental results are compared with theoretical values obtained from ab initio lattice-dynamical calculations. Good agreement is found between the experimental and calculated results. © 2011 American Institute of Physics.Work supported by the Spanish MICINN (Projects MAT2010-16116, MAT2008-06873-C02-02, MAT2010-21270-C04-04, and CSD2007-00045), the Catalan Government (BE-DG 2009), and the Spanish Council for Research (PIE2009-CSIC).Ibanez, J.; Manjón Herrera, FJ.; Segura, A.; Oliva, R.; Cusco, R.; Vilaplana Cerda, RI.; Yamaguchi, T.... (2011). High-pressure Raman scattering in wurtzite indium nitride. Applied Physics Letters. 99:119081-119083. https://doi.org/10.1063/1.3609327S11908111908399Veal, T., McConville, C., & Schaff, W. (Eds.). (2009). Indium Nitride and Related Alloys. doi:10.1201/9781420078107Gallinat, C. S., Koblmüller, G., Brown, J. S., Bernardis, S., Speck, J. S., Chern, G. D., … Wraback, M. (2006). In-polar InN grown by plasma-assisted molecular beam epitaxy. Applied Physics Letters, 89(3), 032109. doi:10.1063/1.2234274Li, S. X., Wu, J., Haller, E. E., Walukiewicz, W., Shan, W., Lu, H., & Schaff, W. J. (2003). Hydrostatic pressure dependence of the fundamental bandgap of InN and In-rich group III nitride alloys. Applied Physics Letters, 83(24), 4963-4965. doi:10.1063/1.1633681Gorczyca, I., Plesiewicz, J., Dmowski, L., Suski, T., Christensen, N. E., Svane, A., … Speck, J. S. (2008). Electronic structure and effective masses of InN under pressure. Journal of Applied Physics, 104(1), 013704. doi:10.1063/1.2953094Domènech-Amador, N., Cuscó, R., Artús, L., Yamaguchi, T., & Nanishi, Y. (2011). Raman scattering study of anharmonic phonon decay in InN. Physical Review B, 83(24). doi:10.1103/physrevb.83.245203Serrano, J., Bosak, A., Krisch, M., Manjón, F. J., Romero, A. H., Garro, N., … Kuball, M. (2011). InN Thin Film Lattice Dynamics by Grazing Incidence Inelastic X-Ray Scattering. Physical Review Letters, 106(20). doi:10.1103/physrevlett.106.205501Pinquier, C., Demangeot, F., Frandon, J., Pomeroy, J. W., Kuball, M., Hubel, H., … Gil, B. (2004). Raman scattering in hexagonal InN under high pressure. Physical Review B, 70(11). doi:10.1103/physrevb.70.113202Pinquier, C., Demangeot, F., Frandon, J., Chervin, J.-C., Polian, A., Couzinet, B., … Maleyre, B. (2006). Raman scattering study of wurtzite and rocksalt InN under high pressure. Physical Review B, 73(11). doi:10.1103/physrevb.73.115211Yao, L. D., Luo, S. D., Shen, X., You, S. J., Yang, L. X., Zhang, S. J., … Xie, S. S. (2010). Structural stability and Raman scattering of InN nanowires under high pressure. Journal of Materials Research, 25(12), 2330-2335. doi:10.1557/jmr.2010.0290Cuscó, R., Ibáñez, J., Alarcón-Lladó, E., Artús, L., Yamaguchi, T., & Nanishi, Y. (2009). Raman scattering study of the long-wavelength longitudinal-optical-phonon–plasmon coupled modes in high-mobility InN layers. Physical Review B, 79(15). doi:10.1103/physrevb.79.155210Wagner, J.-M., & Bechstedt, F. (2003). First-principles study of phonon-mode softening under pressure: the case of GaN and AlN. physica status solidi (b), 235(2), 464-469. doi:10.1002/pssb.200301603Weinstein, B. A. (1977). Phonon dispersion of zinc chalcogenides under extreme pressure and the metallic transformation. Solid State Communications, 24(9), 595-598. doi:10.1016/0038-1098(77)90369-6Yakovenko, E. V., Gauthier, M., & Polian, A. (2004). High-pressure behavior of the bond-bending mode of AIN. Journal of Experimental and Theoretical Physics, 98(5), 981-985. doi:10.1134/1.1767565Reparaz, J. S., Muniz, L. R., Wagner, M. R., Goñi, A. R., Alonso, M. I., Hoffmann, A., & Meyer, B. K. (2010). Reduction of the transverse effective charge of optical phonons in ZnO under pressure. Applied Physics Letters, 96(23), 231906. doi:10.1063/1.3447798Perlin, P., Jauberthie-Carillon, C., Itie, J. P., San Miguel, A., Grzegory, I., & Polian, A. (1992). Raman scattering and x-ray-absorption spectroscopy in gallium nitride under high pressure. Physical Review B, 45(1), 83-89. doi:10.1103/physrevb.45.83Manjón, F. J., Errandonea, D., Romero, A. H., Garro, N., Serrano, J., & Kuball, M. (2008). Lattice dynamics of wurtzite and rocksalt AlN under high pressure: Effect of compression on the crystal anisotropy of wurtzite-type semiconductors. Physical Review B, 77(20). doi:10.1103/physrevb.77.205204Jephcoat, A. P., Hemley, R. J., Mao, H. K., Cohen, R. E., & Mehl, M. J. (1988). Raman spectroscopy and theoretical modeling of BeO at high pressure. Physical Review B, 37(9), 4727-4734. doi:10.1103/physrevb.37.4727Ibáñez, J., Segura, A., Manjón, F. J., Artús, L., Yamaguchi, T., & Nanishi, Y. (2010). Electronic structure of wurtzite and rocksalt InN investigated by optical absorption under hydrostatic pressure. Applied Physics Letters, 96(20), 201903. doi:10.1063/1.3431291Goñi, A. R., Siegle, H., Syassen, K., Thomsen, C., & Wagner, J.-M. (2001). Effect of pressure on optical phonon modes and transverse effective charges inGaNandAlN. Physical Review B, 64(3). doi:10.1103/physrevb.64.03520

High-pressure lattice dynamics in wurtzite and rocksalt indium nitride investigated by means of Raman spectroscopy

We present an experimental and theoretical lattice-dynamical study of InN at high hydrostatic pressures. We perform Raman scattering measurements on five InN epilayers, with different residual strain and free electron concentrations. The experimental results are analyzed in terms of ab initio lattice-dynamical calculations on both wurtzite InN (w-InN) and rocksalt InN (rs-InN) as a function of pressure. Experimental and theoretical pressure coefficients of the optical modes in w-InN are compared, and the role of residual strain on the measured pressure coefficients is analyzed. In the case of the LO band, we analyze and discuss its pressure behavior considering the double-resonance mechanism responsible for the selective excitation of LO phonons with large wave vectors in w-InN. The pressure behavior of the L− coupled mode observed in a heavily doped n-type sample allows us to estimate the pressure dependence of the electron effective mass in w-InN. The results thus obtained are in good agreement with k⋅p theory. The wurtzite-to-rocksalt phase transition on the upstroke cycle and the rocksalt-to-wurtzite backtransition on the downstroke cycle are investigated, and the Raman spectra of both phases are interpreted in terms of DFT lattice-dynamical calculations. ©2013 American Physical SocietyWork was supported by the Spanish Ministerio de Economia y Competitividad through Projects MAT2010-16116, MAT2010-21270-C04-04 and MALTA Consolider Ingenio 2010 (CSD2007-00045).Ibánez, J.; Oliva, R.; Manjón Herrera, FJ.; Segura, A.; Yamaguchi, T.; Nanishi, Y.; Cuscó, R.... (2013). High-pressure lattice dynamics in wurtzite and rocksalt indium nitride investigated by means of Raman spectroscopy. Physical Review B. 88:115202-1-115202-13. https://doi.org/10.1103/PhysRevB.88.115202S115202-1115202-1388Wu, J. (2009). When group-III nitrides go infrared: New properties and perspectives. Journal of Applied Physics, 106(1), 011101. doi:10.1063/1.3155798Pinquier, C., Demangeot, F., Frandon, J., Pomeroy, J. W., Kuball, M., Hubel, H., … Gil, B. (2004). Raman scattering in hexagonal InN under high pressure. Physical Review B, 70(11). doi:10.1103/physrevb.70.113202Pinquier, C., Demangeot, F., Frandon, J., Chervin, J.-C., Polian, A., Couzinet, B., … Maleyre, B. (2006). Raman scattering study of wurtzite and rocksalt InN under high pressure. Physical Review B, 73(11). doi:10.1103/physrevb.73.115211Yao, L. D., Luo, S. D., Shen, X., You, S. J., Yang, L. X., Zhang, S. J., … Xie, S. S. (2010). Structural stability and Raman scattering of InN nanowires under high pressure. Journal of Materials Research, 25(12), 2330-2335. doi:10.1557/jmr.2010.0290Ibáñez, J., Manjón, F. J., Segura, A., Oliva, R., Cuscó, R., Vilaplana, R., … Artús, L. (2011). High-pressure Raman scattering in wurtzite indium nitride. Applied Physics Letters, 99(1), 011908. doi:10.1063/1.3609327Uehara, S., Masamoto, T., Onodera, A., Ueno, M., Shimomura, O., & Takemura, K. (1997). Equation of state of the rocksalt phase of III–V nitrides to 72 GPa or higher. Journal of Physics and Chemistry of Solids, 58(12), 2093-2099. doi:10.1016/s0022-3697(97)00150-9Duan, M.-Y., He, L., Xu, M., Xu, M.-Y., Xu, S., & Ostrikov, K. (Ken). (2010). Structural, electronic, and optical properties of wurtzite and rocksalt InN under pressure. Physical Review B, 81(3). doi:10.1103/physrevb.81.033102Davydov, V. Y., Klochikhin, A. A., Smirnov, A. N., Strashkova, I. Y., Krylov, A. S., Lu, H., … Gwo, S. (2009). Selective excitation ofE1(LO)andA1(LO)phonons with large wave vectors in the Raman spectra of hexagonal InN. Physical Review B, 80(8). doi:10.1103/physrevb.80.081204Cuscó, R., Ibáñez, J., Alarcón-Lladó, E., Artús, L., Yamaguchi, T., & Nanishi, Y. (2009). Raman scattering study of the long-wavelength longitudinal-optical-phonon–plasmon coupled modes in high-mobility InN layers. Physical Review B, 79(15). doi:10.1103/physrevb.79.155210Ernst, S., Goñi, A. R., Syassen, K., & Cardona, M. (1995). LO-Phonon-plasmon modes in n-GaAs and n-InP under pressure. Journal of Physics and Chemistry of Solids, 56(3-4), 567-570. doi:10.1016/0022-3697(94)00242-8Ernst, S., Goñi, A. R., Syassen, K., & Cardona, M. (1996). Plasmon Raman scattering and photoluminescence of heavily dopedn-type InP near the Γ-X crossover. Physical Review B, 53(3), 1287-1293. doi:10.1103/physrevb.53.1287Lin, Y. C., Chiu, C. H., Fan, W. C., Chia, C. H., Yang, S. L., Chuu, D. S., … Chou, W. C. (2007). Raman scattering of longitudinal-optical-phonon-plasmon coupling in Cl-doped ZnSe under high pressure. Journal of Applied Physics, 102(12), 123510. doi:10.1063/1.2826936Gonze, X., Beuken, J.-M., Caracas, R., Detraux, F., Fuchs, M., Rignanese, G.-M., … Allan, D. C. (2002). First-principles computation of material properties: the ABINIT software project. Computational Materials Science, 25(3), 478-492. doi:10.1016/s0927-0256(02)00325-7Goedecker, S., Teter, M., & Hutter, J. (1996). Separable dual-space Gaussian pseudopotentials. Physical Review B, 54(3), 1703-1710. doi:10.1103/physrevb.54.1703Troullier, N., & Martins, J. L. (1991). Efficient pseudopotentials for plane-wave calculations. Physical Review B, 43(3), 1993-2006. doi:10.1103/physrevb.43.1993Wu, M. F., Zhou, S. Q., Vantomme, A., Huang, Y., Wang, H., & Yang, H. (2006). High-precision determination of lattice constants and structural characterization of InN thin films. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 24(2), 275-279. doi:10.1116/1.2167970Ueno, M., Yoshida, M., Onodera, A., Shimomura, O., & Takemura, K. (1994). Stability of the wurtzite-type structure under high pressure: GaN and InN. Physical Review B, 49(1), 14-21. doi:10.1103/physrevb.49.14Serrano, J., Bosak, A., Krisch, M., Manjón, F. J., Romero, A. H., Garro, N., … Kuball, M. (2011). InN Thin Film Lattice Dynamics by Grazing Incidence Inelastic X-Ray Scattering. Physical Review Letters, 106(20). doi:10.1103/physrevlett.106.205501Giannozzi, P., de Gironcoli, S., Pavone, P., & Baroni, S. (1991). Ab initiocalculation of phonon dispersions in semiconductors. Physical Review B, 43(9), 7231-7242. doi:10.1103/physrevb.43.7231Gonze, X., & Lee, C. (1997). Dynamical matrices, Born effective charges, dielectric permittivity tensors, and interatomic force constants from density-functional perturbation theory. Physical Review B, 55(16), 10355-10368. doi:10.1103/physrevb.55.10355Weinstein, B. A. (1977). Phonon dispersion of zinc chalcogenides under extreme pressure and the metallic transformation. Solid State Communications, 24(9), 595-598. doi:10.1016/0038-1098(77)90369-6Yakovenko, E. V., Gauthier, M., & Polian, A. (2004). High-pressure behavior of the bond-bending mode of AIN. Journal of Experimental and Theoretical Physics, 98(5), 981-985. doi:10.1134/1.1767565Ibáñez, J., Segura, A., García-Domene, B., Oliva, R., Manjón, F. J., Yamaguchi, T., … Artús, L. (2012). High-pressure optical absorption in InN: Electron density dependence in the wurtzite phase and reevaluation of the indirect band gap of rocksalt InN. Physical Review B, 86(3). doi:10.1103/physrevb.86.035210Serrano, J., Romero, A. H., Manjón, F. J., Lauck, R., Cardona, M., & Rubio, A. (2004). Pressure dependence of the lattice dynamics of ZnO: Anab initioapproach. Physical Review B, 69(9). doi:10.1103/physrevb.69.094306Cuscó, R., Ibáñez, J., Domenech-Amador, N., Artús, L., Zúñiga-Pérez, J., & Muñoz-Sanjosé, V. (2010). Raman scattering of cadmium oxide epilayers grown by metal-organic vapor phase epitaxy. Journal of Applied Physics, 107(6), 063519. doi:10.1063/1.3357377Cuscó, R., Alarcón-Lladó, E., Ibáñez, J., Yamaguchi, T., Nanishi, Y., & Artús, L. (2009). Raman scattering study of background electron density in InN: a hydrodynamical approach to the LO-phonon–plasmon coupled modes. Journal of Physics: Condensed Matter, 21(41), 415801. doi:10.1088/0953-8984/21/41/415801Cuscó, R., Ibáñez, J., Alarcón-Lladó, E., Artús, L., Yamaguchi, T., & Nanishi, Y. (2009). Photoexcited carriers and surface recombination velocity in InN epilayers: A Raman scattering study. Physical Review B, 80(15). doi:10.1103/physrevb.80.155204Wang, X., Che, S.-B., Ishitani, Y., & Yoshikawa, A. (2006). Experimental determination of strain-free Raman frequencies and deformation potentials for the E2 high and A1(LO) modes in hexagonal InN. Applied Physics Letters, 89(17), 171907. doi:10.1063/1.2364884Perlin, P., Jauberthie-Carillon, C., Itie, J. P., San Miguel, A., Grzegory, I., & Polian, A. (1992). Raman scattering and x-ray-absorption spectroscopy in gallium nitride under high pressure. Physical Review B, 45(1), 83-89. doi:10.1103/physrevb.45.83Perlin, P., Suski, T., Ager, J. W., Conti, G., Polian, A., Christensen, N. E., … Haller, E. E. (1999). Transverse effective charge and its pressure dependence in GaN single crystals. Physical Review B, 60(3), 1480-1483. doi:10.1103/physrevb.60.1480Halsall, M. P., Harmer, P., Parbrook, P. J., & Henley, S. J. (2004). Raman scattering and absorption study of the high-pressure wurtzite to rocksalt phase transition of GaN. Physical Review B, 69(23). doi:10.1103/physrevb.69.235207Goñi, A. R., Siegle, H., Syassen, K., Thomsen, C., & Wagner, J.-M. (2001). Effect of pressure on optical phonon modes and transverse effective charges inGaNandAlN. Physical Review B, 64(3). doi:10.1103/physrevb.64.035205Watson, G. H., Daniels, W. B., & Wang, C. S. (1981). Measurements of Raman intensities and pressure dependence of phonon frequencies in sapphire. Journal of Applied Physics, 52(2), 956-958. doi:10.1063/1.328785Manjón, F. J., Errandonea, D., Romero, A. H., Garro, N., Serrano, J., & Kuball, M. (2008). Lattice dynamics of wurtzite and rocksalt AlN under high pressure: Effect of compression on the crystal anisotropy of wurtzite-type semiconductors. Physical Review B, 77(20). doi:10.1103/physrevb.77.205204Domènech-Amador, N., Cuscó, R., Artús, L., Stoica, T., & Calarco, R. (2012). Longer InN phonon lifetimes in nanowires. Nanotechnology, 23(8), 085702. doi:10.1088/0957-4484/23/8/085702Gorczyca, I., Plesiewicz, J., Dmowski, L., Suski, T., Christensen, N. E., Svane, A., … Speck, J. S. (2008). Electronic structure and effective masses of InN under pressure. Journal of Applied Physics, 104(1), 013704. doi:10.1063/1.2953094Cardona, M., & Güntherodt, G. (Eds.). (1984). Light Scattering in Solids IV. Topics in Applied Physics. doi:10.1007/3-540-11942-6Artús, L., Cuscó, R., Ibáñez, J., Blanco, N., & González-Díaz, G. (1999). Raman scattering by LO phonon-plasmon coupled modes inn-type InP. Physical Review B, 60(8), 5456-5463. doi:10.1103/physrevb.60.5456Ib��ez, J., Cusc�, R., & Art�s, L. (2001). Raman Scattering Determination of Free Charge Density Using a Modified Hydrodynamical Model. physica status solidi (b), 223(3), 715-722. doi:10.1002/1521-3951(200102)223:33.0.co;2-oKasic, A., Schubert, M., Saito, Y., Nanishi, Y., & Wagner, G. (2002). Effective electron mass and phonon modes inn-type hexagonal InN. Physical Review B, 65(11). doi:10.1103/physrevb.65.115206Demangeot, F., Pinquier, C., Frandon, J., Gaio, M., Briot, O., Maleyre, B., … Gil, B. (2005). Raman scattering by the longitudinal optical phonon in InN: Wave-vector nonconserving mechanisms. Physical Review B, 71(10). doi:10.1103/physrevb.71.104305Thakur, J. S., Haddad, D., Naik, V. M., Naik, R., Auner, G. W., Lu, H., & Schaff, W. J. (2005). A1(LO)phonon structure in degenerate InN semiconductor films. Physical Review B, 71(11). doi:10.1103/physrevb.71.115203Inushima, T., Higashiwaki, M., & Matsui, T. (2003). Optical properties of Si-doped InN grown on sapphire (0001). Physical Review B, 68(23). doi:10.1103/physrevb.68.235204Kasic, A., Valcheva, E., Monemar, B., Lu, H., & Schaff, W. J. (2004). InNdielectric function from the midinfrared to the ultraviolet range. Physical Review B, 70(11). doi:10.1103/physrevb.70.115217Wu, J., Walukiewicz, W., Shan, W., Yu, K. M., Ager, J. W., Haller, E. E., … Schaff, W. J. (2002). Effects of the narrow band gap on the properties of InN. Physical Review B, 66(20). doi:10.1103/physrevb.66.201403Kim, J. G., Kamei, Y., Hasuike, N., Harima, H., Kisoda, K., Sasamoto, K., & Yamamoto, A. (2010). Effective mass of InN estimated by Raman scattering. physica status solidi (c), 7(7-8), 1887-1889. doi:10.1002/pssc.200983567Christensen, N. E., & Gorczyca, I. (1994). Optical and structural properties of III-V nitrides under pressure. Physical Review B, 50(7), 4397-4415. doi:10.1103/physrevb.50.4397Ovsyannikov, S. V., Shchennikov, V. V., Karkin, A. E., Polian, A., Briot, O., Ruffenach, S., … Moret, M. (2010). Pressure cycling of InN to 20 GPa: In situ transport properties and amorphization. Applied Physics Letters, 97(3), 032105. doi:10.1063/1.3466913Davydov, V. Y., Klochikhin, A. A., Smirnov, M. B., Emtsev, V. V., Petrikov, V. D., Abroyan, I. A., … Inushima, T. (1999). Phonons in Hexagonal InN. Experiment and Theory. physica status solidi (b), 216(1), 779-783. doi:10.1002/(sici)1521-3951(199911)216:13.0.co;2-

Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material

We study the unintentional H impurities in relation to the free electron properties of state-of-the-art InN films grown by molecular beam epitaxy (MBE). Enhanced concentrations of H are revealed in the near surface regions of the films, indicating postgrowth surface contamination by H. The near surface hydrogen could not be removed upon thermal annealing and may have significant implications for the surface and bulk free electron properties of InN. The bulk free electron concentrations were found to scale with the bulk H concentrations while no distinct correlation with dislocation density could be inferred, indicating a major role of hydrogen for the unintentional conductivity in MBE InN