A Review on Epilepsy and its Management

Today, people face various types of stress in everyday fast life and most people in the world suffer from various neurological disorder. Epilepsy is one of the most common neurological disorders of the brain, affecting about 50 million people around the world, and 90% of them are coming from developing countries. Genetic factors and brain infection, stroke, tumors and epilepsy cause high fever. It imposes a great economic burden on the health systems of countries associated with stigma and discrimination against the patient and also his family in the community, in the workplace, school and home. Many patients with epilepsy suffer from severe emotional stress, behavioral disorders and extreme social isolation. There are many different types of seizure and mechanisms by which the brain generates seizures. The two features of generating seizures are hyperexcitability of neurons and a hyper synchronousneural circuits. A variety of mechanisms alters the balance between excitation and inhibition in predisposing brain local or generalized hyperexcitability region and a hypersynchronia. Purpose of the review is to discuss the history, epidemiology, etiology, pathophysiology, classification of epilepsy, symtomps, diagnosis, management of epilepsy and future trends. Keywords: Anti-epileptic drugs, pathophysiology, seizures, epidemiology, hypersynchron

Scar endometriosis after caesarean section: a case series and review of literature

Endometriosis is defined as extra-uterine localization of ectopic functional endometrial gland and stroma. Cystic or solid tumoral masses caused by endometriosis are named as endometrioma. Although these pathologic conditions mostly encountered in ligaments of uterus, ovaries, pouch of douglos and pelvic peritoneum; endometriosis has also been reported in nose, breast, lung, spleen, gastrointestinal tract, kidney, abdominal wall, but scar endometriomais extremely rare. Scar endometriosis is rare and difficult to diagnose. This condition can be confused with other surgical conditions, however imaging techniques and FNAC are indicated towards better diagnostic approach. Medical treatment is helpful in selected cases but wide excision is the treatment of choice. By presenting this paper, and conducting a review of the literature, we intend to increase the awareness of this rather, rare condition

An avian influenza A(H11N1) virus from a wild aquatic bird revealing a unique Eurasian-American genetic reassortment

Influenza surveillance in different wild bird populations is critical for understanding the persistence, transmission and evolution of these viruses. Avian influenza (AI) surveillance was undertaken in wild migratory and resident birds during the period 2007–2008, in view of the outbreaks of highly pathogenic AI (HPAI) H5N1 in poultry in India since 2006. In this study, we present the whole genome sequence data along with the genetic and virological characterization of an Influenza A(H11N1) virus isolated from wild aquatic bird for the first time from India. The virus was low pathogenicity and phylogenetic analysis revealed that it was distinct from reported H11N1 viruses. The hemagglutinin (HA) gene showed maximum similarity with A/semipalmatedsandpiper/Delaware/2109/2000 (H11N6) and A/shorebird/Delaware/236/2003(H11N9) while the neuraminidase (NA) gene showed maximum similarity with A/duck/Mongolia/540/2001(H1N1). The virus thus possessed an HA gene of the American lineage. The NA and other six genes were of the Eurasian lineage and showed closer relatedness to non-H11 viruses. Such a genetic reassortment is unique and interesting, though the pathways leading to its emergence and its future persistence in the avian reservoir is yet to be fully established

Ultrafast AC-DC NBTI Characterization of Deep IL Scaled HKMG p-MOSFETs

Ultrafast DC and AC negative bias temperature instability (NBTI) measurements are done in high-k metal gate p-MOSFETs having deeply scaled interlayer. Time evolution of degradation during and after DC and AC stress at different duty cycle and frequency are characterized. Impact of last pulse cycle duration (half or full) and pulse low bias on AC stress are studied. Equivalence of measured data from large and small area devices are shown. Experimental results are qualitatively explained using known NBTI physical mechanism

Tuberculous broncho-esophageal fistula managed conservatively

We describe a case of acquired broncho-esophageal fistula (BOF) with hydropneumothorax due to pulmonary tuberculosis treated effictively with antituberculous therapy and intercostal drainage. The fistulous connections appeared to be secondary to mycobacterial mediastinal adenopathy and it healed with medical line of management; surgical intervention was not necessary

A comprehensive modeling framework for gate stack process dependence of DC and AC NBTI in SiON and HKMG p-MOSFETs

A comprehensive modeling framework involving mutually uncorrelated contribution from interface trap generation and hole trapping in pre-existing, process related gate insulator traps is used to study NBTI degradation in SiON and HKMG p-MOSFETs. The model can predict time evolution of degradation during DC and AC stress, time evolution of recovery after stress, impact of stress and recovery bias and temperature, and impact of several AC stress parameters such as pulse frequency, duty cycle, duration of last pulse cycle (half or full) and pulse low bias. The model can successfully explain experimental data measured using fast and ultra-fast methods in SiON and HKMG devices having different gate insulator processes. The trap generation and trapping sub components of the composite model have been verified by independent experiments. Data published by different groups are reconciled and explained. The model can successfully predict long time DC and AC stress data and has been used to determine device degradation at end of life as EOT is scaled for different HKMG devices. (C) 2014 Elsevier Ltd. All rights reserved

A comprehensive AC/DC NBTI model: Stress, recovery, frequency, duty cycle and process dependence

A comprehensive NBTI framework using the H/H2 RD model for interface traps and 2 well model for hole traps has been proposed and used to predict DC and AC experiments. The framework is validated against experimental data from different DC stress and recovery conditions, AC frequency and duty cycle, measurement speed, and across SiON and HKMG devices having different gate insulator processes. Limitations of the alternative 2 stage model framework is discussed