Carrier multiplication yields in CdSe and CdTe nanocrystals by transient photoluminescence

Engineering semiconductors to enhance carrier multiplication (CM) could lead to increased photovoltaic cell performance and a significant widening of the materials range suitable for future solar technologies. Semiconductor nanocrystals (NCs) have been proposed as a favourable structure for CM enhancement, and recent measurements by transient absorption have shown evidence for highly efficient CM in lead chalcogenide and CdSe NCs. We report here an assessment of CM yields in CdSe and CdTe NCs by a quantitative analysis of biexciton and exciton signatures in transient photoluminescence decays. Although the technique is particularly sensitive due to enhanced biexciton radiative rates relative to the exciton, kradBX > 2 kradX, we find no evidence for CM in CdSe and CdTe NCs up to photon energies E > 3 Eg, well above previously reported relative energy thresholds.Comment: 9 pages, 6 figure

Discriminating quantum-optical beam-splitter channels with number-diagonal signal states: Applications to quantum reading and target detection

We consider the problem of distinguishing, with minimum probability of error, two optical beam-splitter channels with unequal complex-valued reflectivities using general quantum probe states entangled over M signal and M' idler mode pairs of which the signal modes are bounced off the beam splitter while the idler modes are retained losslessly. We obtain a lower bound on the output state fidelity valid for any pure input state. We define number-diagonal signal (NDS) states to be input states whose density operator in the signal modes is diagonal in the multimode number basis. For such input states, we derive series formulas for the optimal error probability, the output state fidelity, and the Chernoff-type upper bounds on the error probability. For the special cases of quantum reading of a classical digital memory and target detection (for which the reflectivities are real valued), we show that for a given input signal photon probability distribution, the fidelity is minimized by the NDS states with that distribution and that for a given average total signal energy N_s, the fidelity is minimized by any multimode Fock state with N_s total signal photons. For reading of an ideal memory, it is shown that Fock state inputs minimize the Chernoff bound. For target detection under high-loss conditions, a no-go result showing the lack of appreciable quantum advantage over coherent state transmitters is derived. A comparison of the error probability performance for quantum reading of number state and two-mode squeezed vacuum state (or EPR state) transmitters relative to coherent state transmitters is presented for various values of the reflectances. While the nonclassical states in general perform better than the coherent state, the quantitative performance gains differ depending on the values of the reflectances.Comment: 12 pages, 7 figures. This closely approximates the published version. The major change from v2 is that Section IV has been re-organized, with a no-go result for target detection under high loss conditions highlighted. The last sentence of the abstract has been deleted to conform to the arXiv word limit. Please see the PDF for the full abstrac

Biexciton recombination rates in self-assembled quantum dots

The radiative recombination rates of interacting electron-hole pairs in a quantum dot are strongly affected by quantum correlations among electrons and holes in the dot. Recent measurements of the biexciton recombination rate in single self-assembled quantum dots have found values spanning from two times the single exciton recombination rate to values well below the exciton decay rate. In this paper, a Feynman path-integral formulation is developed to calculate recombination rates including thermal and many-body effects. Using real-space Monte Carlo integration, the path-integral expressions for realistic three-dimensional models of InGaAs/GaAs, CdSe/ZnSe, and InP/InGaP dots are evaluated, including anisotropic effective masses. Depending on size, radiative rates of typical dots lie in the regime between strong and intermediate confinement. The results compare favorably to recent experiments and calculations on related dot systems. Configuration interaction calculations using uncorrelated basis sets are found to be severely limited in calculating decay rates.Comment: 11 pages, 4 figure

Recursion Rules for Scattering Amplitudes in Non-Abelian Gauge Theories

We present a functional derivation of recursion rules for scattering amplitudes in a non-Abelian gauge theory in a form valid to arbitrary loop order. The tree-level and one-loop recursion rules are explicitly displayed.Comment: 18 pages, RevTeX, 2 postscript figures, a reference added, minor typographical errors correcte

Carrier multiplication yields in PbS and PbSe nanocrystals measured by transient photoluminescence

We report here an assessment of carrier multiplication (CM) yields in PbSe and PbS nanocrystals (NCs) by a quantitative analysis of biexciton and exciton dynamics in transient photoluminescence decays. Interest in CM, the generation of more than one electron and hole in a semiconductor after absorption of one photon, has renewed in recent years because of reports suggesting greatly increased efficiencies in nanocrystalline materials compared to the bulk form, in which CM was otherwise too weak to be of consequence in photovoltaic energy conversion devices. In our PbSe and PbS NC samples, however, we estimate using transient photoluminescence that at most 0.25 additional e-h pairs are generated per photon even at energies hv > 5Eg, instead of the much higher values reported in the literature. We argue by comparing NC CM estimates and reported bulk values on an absolute energy basis, which we justify as appropriate on physical grounds, that the data reported thus far are inconclusive with respect to the importance of nanoscale-specific phenomena in the CM process.Comment: 10 pages, 7 figure

E-Queue Mobile Application: Empirical Study in Malaysia UTAR University

Waiting in line is a common experience in daily life, whether for a table at a popular restaurant or for the service at a bank. This experience is not always pleasant for most of people because they always have to wait for a long time to be serviced. The ability to interact with waiting customers is highly desirable because it allows businesses the opportunity to optimize their existing services and offer new services to waiting customers. However, interacting with individuals waiting in a queue has been inefficient and costly because employees must either talk with each waiting customer on an ongoing basis or the business must provide high tech devices that interact with each waiting customer. Agile methodology which will be used to develop this application, it incorporates the SDLC phases starting from the Planning phase up to the Maintenance phase. End of the research, we found that majority of respondents are prefer to use the proposed system compared with current method

Control of bulk superconductivity in a BCS superconductor by surface charge doping via electrochemical gating

The electrochemical gating technique is a powerful tool to tune the surface conduction properties of various materials by means of pure charge doping, but its efficiency is thought to be hampered in materials with a good electronic screening. We show that, if applied to a metallic superconductor (NbN thin films), this approach allows observing reversible enhancements or suppressions of the bulk superconducting transition temperature, which vary with the thickness of the films. These results are interpreted in terms of proximity effect, and indicate that the effective screening length depends on the induced charge density, becoming much larger than that predicted by standard screening theory at very high electric fields