Characteristic Analysis on the Physical Properties of Nanostructured MgSe Thin Films – Substrate Temperature Effect

Magnesium selenide (MgSe) thin films were synthesized on glass substrates by spray pyrolysis technique at different substrate temperatures. Effect of substrate temperature on the physical properties of the films was investigated. XRD studies revealed that all the films exhibit cubic structure with a preferential orientation along the (2 0 0) plane irrespective of the substrate temperature. The band gap value decreases from 2.87 eV to 2.72 eV with increase in substrate temperature. The type of functional groups present in the samples is verified using FTIR spectrum

Characteristic Analysis on the Suitability of CdO Thin Films Towards Optical Device Applications – Substrate Temperature Effect

Cadmium oxide thin films were synthesized by spray pyrolysis technique using perfume atomizer at different substrate temperature on (225, 275, 325 and 375°C) glass substrates. Effect of substrate temperature on the growth mechanism and physical properties of the films was investigated in order to find the suitability of them towards optical device applications. All the films were polycrystalline in nature having cubic structure with a preferential orientation along the (1 1 1) plane irrespective of the substrate temperature. Film transparency increases from 78% to 89% with increase in substrate temperature. Optical band gap decreases from 2.55eV to 2.38 eV with increase in substrate temperature. The refractive index dispersion of the films obeys the single oscillator model. The dispersion parameters, oscillator and dispersion energy of the films were calculated to analyze their choice in designing optical devices. A minimum resistivity of 3.57 x 10-4 Ω cm was obtained for the film coated at 375°

Structural, Morphological, Optical and Electrical Properties of Spray Deposited Ternary CdZns Thin Films

Nanostructured ternary CdZnS thin films with zinc concentrations (0, 2, 4, 6 and 8 wt.%) were prepared by spray pyrolysis technique using perfume atomizer on glass substrates at 400° C. The effect of Zn doping on the structural morphological, optical and electrical properties of the films was studied. All the films exhibit hexagonal structure with a preferential orientation along the (0 0 2) plane irrespective of the Zn doping level. SEM analysis showed that the film morphology modifies from clustered grains to nanosized needle shaped grains with Zn doping. Film transparency increases with Zn doping and the film coated with 6 wt.% Zn concentration exhibit a maximum transmittance of nearly 90% in the visible region. Optical band gap was blue shifted with increase in Zn doping which is associated with Moss-Burstein (MB) effect. PL and Raman spectra implied that more defects existed in the doped samples. All the films have resistivity in the order of 101 Ω-m and the CdS film coated with 6 wt.% Zn concentration had a minimum resistivity of 0.675 x 101 Ω-m

Comparative Study Of CdS Thin Films Fabricated By A Simplified Spray Technique using Two Cationic Precursor Salts With Different Stability Constants

Cadmium sulphide (CdS) thin films were prepared by a low cost simplified spray technique using perfume atomizer on glass substrates at 325?C using two different cationic precursors: cadmium acetate and cadmium chloride. The effect of cationic precursors on the structural, morphological, optical and electrical properties was studied. Structural studies reveal that the films are polycrystalline in nature with a mixture of both cubic and hexagonal phases with hexagonal phase being predominant irrespective of the precursor used. The preferential orientation factor f(h k l) of CdCl2 based film is high compared to that of Cd(CH3COO)2 based film. Grain size value were found to be equal to 21.33 nm and 32.63 nm for Cd(CH3COO)2 and CdCl2 based CdS films respectively. The optical transmittance in the visible range was found to be \u3e 85 % for both the films. The specular reflectance values for both the films are very low. High transmittance and low reflectance values obtained for the films makes them suitable as antireflecting coating materials for thin film solar cells

Investigations on the Properties of Nanostructured Mg-Doped Sn₂S₃ Thin Films towards Photovoltaic Applications

This paper reports the synthesis, crystal structure, surface morphology, optical and electrical properties of Mg-doped Sn₂S₃ thin films deposited by spray pyrolysis technique. All the films exhibit orthorhombic crystal structure with a (211) preferential orientation. Crystallite size calculations based on the Debye-Scherrer formula indicated that the Sn₂S₃ crystallite size increases with Mg content from 27.97 nm to 33.58 nm. Scanning electron microscopy images showed that all the films were very smooth composed of nanoneedle and nanoplate shaped grains. The band gap energy of the films exhibits a blue shift from 1.94 eV to 2.09 eV with increase in Mg concentration. Resistivity values of the undoped and Mg-doped Sn₂S₃ films were found to be in the order of 0.1 Ωcm. From the obtained results it is observed that the Sn₂S₃ film coated with 2 wt% Mg concentration exhibits better physical properties