An Evaluation of Non-Contrastive Self-Supervised Learning for Federated Medical Image Analysis

Privacy and annotation bottlenecks are two major issues that profoundly affect the practicality of machine learning-based medical image analysis. Although significant progress has been made in these areas, these issues are not yet fully resolved. In this paper, we seek to tackle these concerns head-on and systematically explore the applicability of non-contrastive self-supervised learning (SSL) algorithms under federated learning (FL) simulations for medical image analysis. We conduct thorough experimentation of recently proposed state-of-the-art non-contrastive frameworks under standard FL setups. With the SoTA Contrastive Learning algorithm, SimCLR as our comparative baseline, we benchmark the performances of our 4 chosen non-contrastive algorithms under non-i.i.d. data conditions and with a varying number of clients. We present a holistic evaluation of these techniques on 6 standardized medical imaging datasets. We further analyse different trends inferred from the findings of our research, with the aim to find directions for further research based on ours. To the best of our knowledge, ours is the first to perform such a thorough analysis of federated self-supervised learning for medical imaging. All of our source code will be made public upon acceptance of the paper

Design aspects of dual gate GaAs nanowire FET for room temperature charge qubit operation: A study on diameter and gate engineering

The current work explores a geometrically engineered dual gate GaAs nanowire FET with state of the art miniaturized dimensions for high performance charge qubit operation at room temperature. Relevant gate voltages in such device can create two voltage tunable quantum dots (VTQDs) underneath the gates, as well as can manipulate their eigenstate detuning and the inter-dot coupling to generate superposition, whereas a small drain bias may cause its collapse leading to qubit read out. Such qubit operations, i.e., Initialization, Manipulation, and Measurement, are theoretically modeled in the present work by developing a second quantization filed operator based Schrodinger-Poisson self-consistent framework coupled to non-equilibrium Greens function formalism. The study shows that the Bloch sphere coverage can be discretized along polar and azimuthal directions by reducing the nanowire diameter and increasing the inter-dot separation respectively, that can be utilized for selective information encoding. The theoretically obtained stability diagrams suggest that downscaled nanowire diameter and increased gate separation sharpen the bonding and anti-bonding states with reduced anticrossing leading to a gradual transformation of the hyperbolic current mapping into a pair of straight lines. However, the dephasing time in the proposed GaAs VTQD-based qubit may be significantly improved by scaling down both the nanowire diameter and gate separation. Therefore, the present study suggests an optimization window for geometrical engineering of a dual gate nanowire FET qubit to achieve superior qubit performance. Most importantly, such device is compatible with the mainstream CMOS technology and can be utilized for large scale implementation by little modification of the state of the art fabrication processes

IDEAL: Improved DEnse locAL Contrastive Learning for Semi-Supervised Medical Image Segmentation

Due to the scarcity of labeled data, Contrastive Self-Supervised Learning (SSL) frameworks have lately shown great potential in several medical image analysis tasks. However, the existing contrastive mechanisms are sub-optimal for dense pixel-level segmentation tasks due to their inability to mine local features. To this end, we extend the concept of metric learning to the segmentation task, using a dense (dis)similarity learning for pre-training a deep encoder network, and employing a semi-supervised paradigm to fine-tune for the downstream task. Specifically, we propose a simple convolutional projection head for obtaining dense pixel-level features, and a new contrastive loss to utilize these dense projections thereby improving the local representations. A bidirectional consistency regularization mechanism involving two-stream model training is devised for the downstream task. Upon comparison, our IDEAL method outperforms the SoTA methods by fair margins on cardiac MRI segmentation

Non-equilibrium VLS-grown stable ST12-Ge thin film on Si substrate: A study on strain-induced band-engineering

The current work describes a novel method of growing thin films of stable crystalline ST12-Ge, a high pressure polymorph of Ge, on Si substrate by a non-equilibrium VLS-technique. The study explores the scheme of band engineering of ST12-Ge by inducing process-stress into it as a function of the growth temperature and film thickness. In the present work, ST12-Ge films are grown at 180 C - 250 C to obtain thicknesses of ~4.5-7.5 nm, which possess extremely good thermal stability up to a temperature of ~350 C. Micro-Raman study shows the stress induced in such ST12-Ge films to be compressive in nature and vary in the range of ~0.5-7.5 GPa. The measured direct band gap is observed to vary within 0.688 eV to 0.711 eV for such stresses, and four indirect band gaps are obtained to be 0.583 eV, 0.614-0.628 eV, 0.622-0.63 eV and 0.623-0.632 eV, accordingly. The corresponding band structures for unstrained and strained ST12-Ge are calculated by performing DFT simulation, which shows that a compressive stress transforms the fundamental band gap at M-G valley from indirect to direct one. Henceforth, the possible route of strain induced band engineering in ST12-Ge is explored by analyzing all the transitions in strained and unstrained band structures along with substantiation of the experimental results and theoretical calculations. The investigation shows that unstrained ST12-Ge is a natural n-type semiconductor which transforms into p-type upon incorporation of a compressive stress of ~5 GPa, with the in-plane electron effective mass components at M-G band edge to be ~0.09 me. Therefore, such band engineered ST12-Ge exhibits superior mobility along with its thermal stability and compatibility with Si, which can have potential applications to develop high-speed MOS devices for advanced CMOS technology

Antimagnetic rotation and sudden change of electric quadrupole transition strength in 143Eu

Lifetimes of the states in the quadrupole structure in 143Eu have been measured using the Doppler shift attenuation method as well as parity of the states in the sequence has been firmly identified from polarization measurement using the Indian National Gamma Array. The decreasing trends of the deduced quadrupole transition strength B(E2) with spin, along with increasing J (2) /B(E2) values before band crossing, conclusively establish the origin of these states as arising out of antimagnetic rotation. The abrupt increase in the B(E2) values after the band crossing in the quadrupole band, a novel feature observed in the present experiment, may indicates the crossing of different shears configurations resulting in re-opening of shears structure. The results are well reproduced by numerical calculation within the framework of semi-classical geometric model.Comment: 6 pages, 4 postscript figure

Synthesis and structure of new pyrochlore-type oxides Ln2ScNbO7 (Ln = Pr, Nd, Eu, Gd, Dy)

We report the synthesis and structural study of mixed oxides in the Ln2ScNbO7 series. New phases with Ln = Pr, Eu, Gd and Dy are obtained. All crystallize in the cubic pyrochlore structure type, space group F-d3m, with no Sc-Nb ordering on the B-site. The structures are determined by Rietveld refinement. The evolution of cell parameters, interatomic distances and angles as a function of lanthanide cation size is discussed. Magnetic measurements show the absence of ordering down to 2 K, in agreement with the presence of strong geometric frustration in the lanthanide sublattice. The europium phase shows a peculiar magnetic behaviour; its magnetic susceptibility becomes constant below ca 50 K. This feature confirms the behaviour observed previously on Eu2Ti2O7 and is ascribed to crystal field effects