Electron-Electron Interaction in Linear Arrays of Small Tunnel Junctions

We have calculated the spatial distribution of the electrostatic potential created by an unbalanced charge $q$ in one of the conducting electrodes of a long, uniform, linear array of small tunnel junctions. The distribution describes, in particular, the shape of a topological single-electron soliton in such an array. An analytical solution obtained for a circular cross section model is compared with results of geometrical modeling of a more realistic structure with square cross section. These solutions are very close to one another, and can be reasonably approximated by a simple phenomenological expression. In contrast to the previously accepted exponential approximation, the new result describes the crossover between the linear change of the potential near the center of the soliton to the unscreened Coulomb potential far from the center, with an unexpected ``hump'' near the crossover point.Comment: 8 pages, RevTeX 3.0, 4 PostScript figures. To appear in Applied Physics Letters, circa 12 Nov 199

Single-Electron Traps: A Quantitative Comparison of Theory and Experiment

We have carried out a coordinated experimental and theoretical study of single-electron traps based on submicron aluminum islands and aluminum oxide tunnel junctions. The results of geometrical modeling using a modified version of MIT's FastCap were used as input data for the general-purpose single-electron circuit simulator MOSES. The analysis indicates reasonable quantitative agreement between theory and experiment for those trap characteristics which are not affected by random offset charges. The observed differences between theory and experiment (ranging from a few to fifty percent) can be readily explained by the uncertainty in the exact geometry of the experimental nanostructures.Comment: 17 pages, 21 figures, RevTex, eps

Shot Noise of Single-Electron Tunneling in 1D Arrays

We have used numerical modeling and a semi-analytical calculation method to find the low frequency value S_{I}(0) of the spectral density of fluctuations of current through 1D arrays of small tunnel junctions, using the ``orthodox theory'' of single-electron tunneling. In all three array types studied, at low temperature (kT << eV), increasing current induces a crossover from the Schottky value S_{I}(0)=2e to the ``reduced Schottky value'' S_{I}(0)=2e/N (where N is the array length) at some crossover current I_{c}. In uniform arrays over a ground plane, I_{c} is proportional to exp(-\lambda N), where 1/\lambda is the single-electron soliton length. In arrays without a ground plane, I_{c} decreases slowly with both N and \lambda. Finally, we have calculated the statistics of I_{c} for ensembles of arrays with random background charges. The standard deviation of I_{c} from the ensemble average is quite large, typically between 0.5 and 0.7 of , while the dependence of on N or \lambda is so weak that it is hidden within the random fluctuations of the crossover current.Comment: RevTex. 21 pages of text, 10 postscript figure

Transport of charged particles by adjusting rf voltage amplitudes

We propose a planar architecture for scalable quantum information processing (QIP) that includes X-junctions through which particles can move without micromotion. This is achieved by adjusting radio frequency (rf) amplitudes to move an rf null along the legs of the junction. We provide a proof-of-principle by transporting dust particles in three dimensions via adjustable rf potentials in a 3D trap. For the proposed planar architecture, we use regularization techniques to obtain amplitude settings that guarantee smooth transport through the X-junction.Comment: 16 pages, 10 figure

A trapped-ion local field probe

We introduce a measurement scheme that utilizes a single ion as a local field probe. The ion is confined in a segmented Paul trap and shuttled around to reach different probing sites. By the use of a single atom probe, it becomes possible characterizing fields with spatial resolution of a few nm within an extensive region of millimeters. We demonstrate the scheme by accurately investigating the electric fields providing the confinement for the ion. For this we present all theoretical and practical methods necessary to generate these potentials. We find sub-percent agreement between measured and calculated electric field values

Full capacitance-matrix effects in driven Josephson-junction arrays

We study the dynamic response to external currents of periodic arrays of Josephson junctions, in a resistively capacitively shunted junction (RCSJ) model, including full capacitance-matrix effects}. We define and study three different models of the capacitance matrix $C_{\vec{r},\vec{r}'}$: Model A includes only mutual capacitances; Model B includes mutual and self capacitances, leading to exponential screening of the electrostatic fields; Model C includes a dense matrix $C_{\vec{r},\vec{r}'}$ that is constructed approximately from superposition of an exact analytic solution for the capacitance between two disks of finite radius and thickness. In the latter case the electrostatic fields decay algebraically. For comparison, we have also evaluated the full capacitance matrix using the MIT fastcap algorithm, good for small lattices, as well as a corresponding continuum effective-medium analytic evaluation of a finite voltage disk inside a zero-potential plane. In all cases the effective $C_{\vec{r},\vec{r}'}$ decays algebraically with distance, with different powers. We have then calculated current voltage characteristics for DC+AC currents for all models. We find that there are novel giant capacitive fractional steps in the I-V's for Models B and C, strongly dependent on the amount of screening involved. We find that these fractional steps are quantized in units inversely proportional to the lattice sizes and depend on the properties of $C_{\vec{r},\vec{r}'}$. We also show that the capacitive steps are not related to vortex oscillations but to localized screened phase-locking of a few rows in the lattice. The possible experimental relevance of these results is also discussed.Comment: 12 pages 18 Postscript figures, REVTEX style. Paper to appear in July 1, Vol. 58, Phys. Rev. B 1998 All PS figures include

Association of pre-radiotherapy tumour burden and overall survival in newly diagnosed glioblastoma adjusted for MGMT promoter methylation status

PURPOSE: We retrospectively evaluated the association between postoperative pre-radiotherapy tumour burden and overall survival (OS) adjusted for the prognostic value of O$^{6}$-methylguanine DNA methyltransferase (MGMT) promoter methylation in patients with newly diagnosed glioblastoma treated with radio-/chemotherapy with temozolomide. MATERIALS AND METHODS: Patients were included from the CENTRIC (EORTC 26071-22072) and CORE trials if postoperative magnetic resonance imaging scans were available within a timeframe of up to 4weeks before radiotherapy, including both pre- and post-contrast T1w images and at least one T2w sequence (T2w or T2w-FLAIR). Postoperative (residual) pre-radiotherapy contrast-enhanced tumour (CET) volumes and non-enhanced T2w abnormalities (NT2A) tissue volumes were obtained by three-dimensional segmentation. Cox proportional hazard models and Kaplan Meier estimates were used to assess the association of pre-radiotherapy CET/NT2A volume with OS adjusted for known prognostic factors (age, performance status, MGMT status). RESULTS: 408 tumour (of which 270 MGMT methylated) segmentations were included. Median OS in patients with MGMT methylated tumours was 117 weeks versus 61weeks in MGMT unmethylated tumours (p < 0.001). When stratified for MGMT methylation status, higher CET volume (HR 1.020; 95% confidence interval CI [1.013-1.027]; p < 0.001) and older age (HR 1.664; 95% CI [1.214-2.281]; p = 0.002) were significantly associated with shorter OS while NT2A volume and performance status were not. CONCLUSION: Pre-radiotherapy CET volume was strongly associated with OS in patients receiving radio-/chemotherapy for newly diagnosed glioblastoma stratified by MGMT promoter methylation status

Association of pre-radiotherapy tumour burden and overall survival in newly diagnosed glioblastoma adjusted for <i>MGMT </i>promoter methylation status

PURPOSE: We retrospectively evaluated the association between postoperative pre-radiotherapy tumour burden and overall survival (OS) adjusted for the prognostic value of O$^{6}$-methylguanine DNA methyltransferase (MGMT) promoter methylation in patients with newly diagnosed glioblastoma treated with radio-/chemotherapy with temozolomide. MATERIALS AND METHODS: Patients were included from the CENTRIC (EORTC 26071-22072) and CORE trials if postoperative magnetic resonance imaging scans were available within a timeframe of up to 4weeks before radiotherapy, including both pre- and post-contrast T1w images and at least one T2w sequence (T2w or T2w-FLAIR). Postoperative (residual) pre-radiotherapy contrast-enhanced tumour (CET) volumes and non-enhanced T2w abnormalities (NT2A) tissue volumes were obtained by three-dimensional segmentation. Cox proportional hazard models and Kaplan Meier estimates were used to assess the association of pre-radiotherapy CET/NT2A volume with OS adjusted for known prognostic factors (age, performance status, MGMT status). RESULTS: 408 tumour (of which 270 MGMT methylated) segmentations were included. Median OS in patients with MGMT methylated tumours was 117 weeks versus 61weeks in MGMT unmethylated tumours (p < 0.001). When stratified for MGMT methylation status, higher CET volume (HR 1.020; 95% confidence interval CI [1.013-1.027]; p < 0.001) and older age (HR 1.664; 95% CI [1.214-2.281]; p = 0.002) were significantly associated with shorter OS while NT2A volume and performance status were not. CONCLUSION: Pre-radiotherapy CET volume was strongly associated with OS in patients receiving radio-/chemotherapy for newly diagnosed glioblastoma stratified by MGMT promoter methylation status

Modeling Single Electron Transfer in Si:P Double Quantum Dots

Solid-state systems such as P donors in Si have considerable potential for realization of scalable quantum computation. Recent experimental work in this area has focused on implanted Si:P double quantum dots (DQDs) that represent a preliminary step towards the realization of single donor charge-based qubits. This paper focuses on the techniques involved in analyzing the charge transfer within such DQD devices and understanding the impact of fabrication parameters on this process. We show that misalignment between the buried dots and surface gates affects the charge transfer behavior and identify some of the challenges posed by reducing the size of the metallic dot to the few donor regime.Comment: 11 pages, 7 figures, submitted to Nanotechnolog