GaAs(110) surface electronic structure by metastable deexcitation spectroscopy

Metastable deexcitation spectroscopy was applied to study the surface valence electronic structure of clean cleaved GaAs(110). Metastable deexcitation spectroscopy was flanked by angle-resolved photoemission. An effective surface density of states was derived from the experimental spectrum through deconvolution. Two groups of states were observed in the 0-4 and 5-8 eV range of binding energy, respectively. These features were ascribed to emission from surface states. A plane-by-plane tight-binding density-of-states calculation was performed. More quantitative insights were obtained by comparing experimental and theoretical results. The most prominent feature of the first group of states of deconvolution was assigned to surface state A(5). Contributions from states A(4), A(3), A(1)', and A(2)' were also observed. The doublet of the second group of features was identified with C-2 and C-1. Relative amplitudes of effective surface density of states were related to surface charge density

Structural transition in Fe ultrathin epitaxial films grown on Ni(111)

A structural study of Fe ultrathin epitaxial films, grown at room temperature on Ni(111), has been performed in the 1.5-18 ML coverage range by angle-scanned photoelectron diffraction. Both backscattering and forward-scattering energy regimes have been employed, in order to enhance the structural sensitivity at lower and higher film thicknesses, respectively. Modeling of the experimental data has been performed with multiple scattering calculations. We found indications that Fe atoms in the first layer occupy fcc hollow sites and stack with a pseudomorphic fcc structure up to 2 ML. Concerning the growth mode at these early stages, data suggest that a good substrate wetting and a sharp Fe/Ni interface take place. Between 3 and 6 ML, transition to a bcc(110) phase develops. By quantitative R-factor analysis, we found that Nishiyama-Wassermann (NW) in-plane orientation of the bcc(110) cell ((bcc)parallel to(fcc)) is favored over the Kurdjumov-Sachs ((bcc)parallel to(fcc)) orientation. The best-fit vertical interlayer distance between bcc(110) planes is d(NW)=2.11 Angstrom (+3.9% expansion) at 6 ML and relaxes to d(NW)=2.05 Angstrom (+1.0%) at 18 ML, in agreement with the angular shift observed for the forward-focusing features. In the same coverage range, the angle between bcc(110) surface basis vectors changes from 67.7degrees to 69.0degrees, corresponding to -1.7% and -1.0% contractions of the surface cell area, respectively

Interface chemistry and epitaxial growth modes of SrF2 on Si(001)

Molecular beam epitaxy has been used to grow SrF2 thin films on Si(001). The growth modes have been investigated by atomic force microscopy, electron diffraction, and photoemission. Two principal growth regimes have been identified: (i) when deposition is carried out with the substrate held at a temperature of 700-750 degrees C, SrF2 molecules react with the substrate giving rise to a Sr-rich wetting layer on top of which three dimensional bulklike fluoride ridges develop; (ii) when deposition is carried out with the substrate held at 400 degrees C, a nanopatterned film forms with characteristic triangular islands. Results are compared to the growth mode of CaF2 on Si(001) under analogous deposition conditions. Morphological and structural differences between the two systems are associated with the larger lattice parameter of SrF2 with respect to CaF2, resulting in a larger mismatch with the Si substrate

Molecular states of polyacenes grown on noble metal surfaces

Here we present a combined photoemission (UPS), metastable deexcitation (MDS) and optical absorption (NEXAFS) at C K-edge study of molecular states of polyacenes grown on Ag(111) and Au(111), from submonolayer to multilayer thicknesses. We focus on the evolution of the HOMO and LUMO molecular states induced by the adsorption from submonolayer to monolayer thickness and we find a different redistribution of these states in the various systems formed at RT: while a strong redistribution of the molecular states takes place in Pn/Ag(111) and Tc/Ag(111) interface, a weaker interaction is indicated for Tc/Au(111)

Structural analysis of Fe/Ni(001) films by photoelectron diffraction

The structure of Fe films, epitaxially grown on Ni(001), has been studied in the 0-14 ML coverage range by means of photoelectron diffraction (PD) in the forward scattering regime. Quantitative analysis by a multiple scattering approach has been performed on Fe films at a coverage of 3 and 7 ML. Analysis of the 3-ML data showed that growth was not layer-by-layer but rather occurred through islands nucleation and that transition from the pseudomorphic fee to the bcc phase was located in this early stage of growth. In fact, best fit was obtained by calculations on a 2 ML bcc(110)/3 ML fcc(001) Fe film with the bcc[111]parallel to fcc[110] in-plane orientation. Interlayer spacings of 2.05 +/- 0.068 Angstrom, 2.01 +/- 0.03 Angstrom, and 1.85 +/- 0.03 Angstrom were found in the bcc region, between bcc and fee layers and in the fee region, respectively. Best-fit in-plane nearest-neighbors (n-n) distance was 2.49 +/- 0.02 Angstrom, in registry with that of the Ni substrate. To analyze the 7-ML data a 4 ML bcc(110)/3 ML fcc(001) film was employed, varying the fitting parameters in the bcc region only. Best fit was obtained for an interlayer spacing of 2.04 +/- 0.04 Angstrom and in plane n-n distance of 2.47 +/- 0.01 Angstrom. At 14 ML the PD pattern collected over a 94 degrees azimuthal range displayed symmetry around the [110] substrate direction, which was explained by the equipopulation of the 4 bcc(110) domains satisfying the bcc[111]parallel to fcc[110] alignment

Structural and electronic properties of anisotropic ultrathin organic films from dichroic resonant soft x-ray reflectivity

We developed a quantitative approach for the determination of molecular arrangement and electronic structure in anisotropic organic ultrathin films based on the measurement of polarized reflectivity at the carbon K-edge. The reflectivity spectra were fitted to a parameterized model calculation. The method was applied to a self-assembled monolayer of 1,4-benzenedimethanethiol on gold. To simulate reflectivity, the organic anisotropic film was described by a dielectric tensor, obtained by ab initio calculations for the single molecule and suitable rotations to describe the molecular organization in film domains. Film structure was obtained though the best fit of the simulation to the experiment. Results were consistent with a monolayer-thick film composed of domains of molecules with in-plane isotropic distribution of orientations. In each domain, molecules adopted a standing configuration, with a tilt of 28° relative to the substrate normal. Information on the modification of the molecular electronic states due to chemical bonding was derived

Electronic properties of hydrogen exposed III-V semiconductor surfaces

A critical review of experimental results aiming at determining the atomic geometry and the electronic properties of the hydrogenated (110) surfaces of III-V semiconductor compounds is given. Results deal mainly with the prototype GaAs(110) surface. Experimental results include photoemission, electron energy loss, metastable deexcitation spectroscopy, Auger electron spectroscopy, photoelectron diffraction and grazing incidence X-ray diffraction data. A unified picture for the hydrogenated surface can be derived. It is characterized by an almost nonrelaxed substrate (or even counter-relaxed), absence of gap states and, up to one monolayer of coverage, by a surface order and an almost preserved substrate stoichiometry. Higher exposures induce surface etching with changes of Ga to As concentration ratio

Dielectric properties of the Si(111)2×1 surface: Optical constants and the energy-loss spectrum

We present a method of computation of the optical constants of the surface layer of a solid, starting from a differential reflectivity spectrum. The differential reflectivity was obtained by comparing the overall reflectivity of the same sample in the case of a clean and oxidized surface. The method assumes sharp interfaces at the vacuum surface and at the surface bulk side. The physical properties of the bulk and of the surface layer are described by an energy-dependent dielectric constant. This method is applied to the Si(111)2×1 surface. The surface optical constants are derived in the (0.3-4.0)-eV range. With the use of the same model and the calculated optical constants, the electron-energy-loss spectrum of the Si(111)2×1 surface has been calculated. The agreement with the experiment is good. This is assumed as a proof of the reliability of the optical constants. In addition the comparison of the calculated energy-loss spectrum and the experiment allows the explanation of the apparent disagreement between optical and energy-loss experimental data in the near-infrared range. We demonstrate the different nature between the energy-loss peak and the optical one, the first due to the excitation of the two surface interface modes of the Si(111)2×1 surface layer and the second to an interband transition