A Biased Random Key Genetic Algorithm Approach for Unit Commitment Problem

A Biased Random Key Genetic Algorithm (BRKGA) is proposed to find solutions for the unit commitment problem. In this problem, one wishes to schedule energy production on a given set of thermal generation units in order to meet energy demands at minimum cost, while satisfying a set of technological and spinning reserve constraints. In the BRKGA, solutions are encoded by using random keys, which are represented as vectors of real numbers in the interval [0, 1]. The GA proposed is a variant of the random key genetic algorithm, since bias is introduced in the parent selection procedure, as well as in the crossover strategy. Tests have been performed on benchmark large-scale power systems of up to 100 units for a 24 hours period. The results obtained have shown the proposed methodology to be an effective and efficient tool for finding solutions to large-scale unit commitment problems. Furthermore, from the comparisons made it can be concluded that the results produced improve upon some of the best known solutions

Large-scale discovery of novel genetic causes of developmental disorders

Despite three decades of successful, predominantly phenotype-driven discovery of the genetic causes of monogenic disorders1, up to half of children with severe developmental disorders of probable genetic origin remain without a genetic diagnosis. Particularly challenging are those disorders rare enough to have eluded recognition as a discrete clinical entity, those with highly variable clinical manifestations, and those that are difficult to distinguish from other, very similar, disorders. Here we demonstrate the power of using an unbiased genotype-driven approach2 to identify subsets of patients with similar disorders. By studying 1,133 children with severe, undiagnosed developmental disorders, and their parents, using a combination of exome sequencing3,4,5,6,7,8,9,10,11 and array-based detection of chromosomal rearrangements, we discovered 12 novel genes associated with developmental disorders. These newly implicated genes increase by 10% (from 28% to 31%) the proportion of children that could be diagnosed. Clustering of missense mutations in six of these newly implicated genes suggests that normal development is being perturbed by an activating or dominant-negative mechanism. Our findings demonstrate the value of adopting a comprehensive strategy, both genome-wide and nationwide, to elucidate the underlying causes of rare genetic disorders

Correlation-Driven Insulator-Metal Transition in Near-Ideal Vanadium Dioxide Films

We use polarization- and temperature-dependent x-ray absorption spectroscopy, in combination with photoelectron microscopy, x-ray diffraction, and electronic transport measurements, to study the driving force behind the insulator-metal transition in VO2. We show that both the collapse of the insulating gap and the concomitant change in crystal symmetry in homogeneously strained single-crystalline VO2 films are preceded by the purely electronic softening of Coulomb correlations within V-V singlet dimers. This process starts 7 K (±0.3 K) below the transition temperature, as conventionally defined by electronic transport and x-ray diffraction measurements, and sets the energy scale for driving the near-room-temperature insulator-metal transition in this technologically promising material