Study of the Substrate Influence in ZnO Nanowires Oriented Growth

AbstractA solution growth approach for zinc oxide (ZnO) nanowires is highly appealing because of the low growth temperature and possibility for large area synthesis. In our work, ZnO nanowires were obtained from thin films prepared on silica glass, Si (100) and Si (111) from a single and five layers spin-coating deposition of a sol–gel prepared with dehydrate zinc acetate, monoethanolamine and isopropanol. Crystallization annealing was performed at 450°C. These films were used as seed layer to prepare ZnO nanowires/nanorods from a zinc nitrate and hexamethylenetetramine solution. X-ray diffraction analysis showed that nanowires/nanorods grown on Si (111) were preferentially orientated along the [002] direction

Nanocrystalline ZnO Photoconductivity Measurements

AbstractPure ZnO have been prepared on amorphous SiO2 substrates from a precursor solution of dihydrated zinc acetate and absolute alcohol. The sol was deposited on the substrates by the spin-coating technique. After de deposit of each layer, a drying treatment was performed at 200°C for10min, to solidify the deposited material. Finally, all the specimens were thermally treated at 450°C for 3h to crystallize them. The characterization by X rays diffraction was performed using the glancing angle configuration and films morphology was observed with an Atomic Force Microscope and by Field Emission Scanning Electron Microscopy. Photoconductivity was studied in function of the wavelength at 50°C using the four-points method and illuminating by arrays of LEDs with different wavelengths