102 research outputs found
Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing
The evolution of the Schottky barrier height (SBH) of Er silicide contacts to
n-Si is investigated as a function of the annealing temperature. The SBH is
found to drop substantially from 0.43 eV for the as-deposited sample to reach
0.28 eV, its lowest value, at 450 C. By x-ray diffraction, high resolution
transmission electron microscopy, and x-ray photoelectron spectroscopy, the
decrease in the SBH is shown to be associated with the progressive formation of
crystalline ErSi2-x
High-Resolution Synchrotron Photoemission Studies of the Electronic Structure and Thermal Stability of CH 3
High thermally induced index variations with short response time in InP/GaInAsP/InP waveguide Schottky diodes
Study of the oxidation at the Al2O3 / GaSb interface after NH4OH and HCl / (NH4)2S passivations and O2 plasma post atomic layer deposition process
International audienceIn this work, the Al2O3/GaSb interface has been studied by x-ray photoelectron spectroscopy in order to improve interfacial and electrical properties of metal–oxide–semiconductor structures based on GaSb. First, different passivations using NH4OH or (NH4)2S were studied with a dilution of 4% and 5%, respectively, in order to reduce native oxides on the GaSb surface. Then, we considered the oxidation of the Al2O3 and GaSb surface after treatments with an oxygen (O2) plasma post atomic layer deposition (ALD) process and with post deposition annealing at different temperatures. We found that (NH4)2S passivation leads to a lower quantity of native oxides on the GaSb surface and that the O2 plasma post ALD process enables the formation of an oxygen-rich layer within the Al2O3 at the interface reducing the GaSb surface oxidation after post deposition annealing of the oxide
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