Modulation of the Curie Temperature in Ferromagnetic/Ferroelectric Hybrid Double Quantum Wells

We propose a ferromagnetic/ferroelectric hybrid double quantum well structure, and present an investigation of the Curie temperature (Tc) modulation in this quantum structure. The combined effects of applied electric fields and spontaneous electric polarization are considered for a system that consists of a Mn \delta-doped well, a barrier, and a p-type ferroelectric well. We calculate the change in the envelope functions of carriers at the lowest energy sub-band, resulting from applied electric fields and switching the dipole polarization. By reversing the depolarizing field, we can achieve two different ferromagnetic transition temperatures of the ferromagnetic quantum well in a fixed applied electric field. The Curie temperature strongly depends on the position of the Mn \delta-doped layer and the polarization strength of the ferroelectric well.Comment: 9 pages, 5 figures, to be published in Phys. Rev. B (2006) minor revision: One of the line types is changed in Fig.

Pion form factors with improved infrared factorization

We calculate electromagnetic pion form factors with an analytic model for $\alpha_{\rm s}(Q^2)$ which is infrared (IR) finite without invoking a ``freezing'' hypothesis. We show that for the asymptotic pion distribution amplitude, $F_{\pi ^{0}\gamma ^{*}\gamma}$ agrees well with the data, whereas the IR-enhanced hard contribution to $F_{\pi}$ and the soft (nonfactorizing) part can jointly account for the data.Comment: 12 pages; 3 figures as PS files (1 figure added); modified text; added references. To appear in Phys. Lett.

Dielectric constants of Ir, Ru, Pt, and IrO2: Contributions from bound charges

We investigated the dielectric functions $\epsilon$($\omega$) of Ir, Ru, Pt, and IrO$_2$, which are commonly used as electrodes in ferroelectric thin film applications. In particular, we investigated the contributions from bound charges $\epsilon^{b}$($\omega$), since these are important scientifically as well as technologically: the $\epsilon_1^{b}$(0) of a metal electrode is one of the major factors determining the depolarization field inside a ferroelectric capacitor. To obtain $\epsilon_1^{b}$(0), we measured reflectivity spectra of sputtered Pt, Ir, Ru, and IrO2 films in a wide photon energy range between 3.7 meV and 20 eV. We used a Kramers-Kronig transformation to obtain real and imaginary dielectric functions, and then used Drude-Lorentz oscillator fittings to extract $\epsilon_1^{b}$(0) values. Ir, Ru, Pt, and IrO$_2$ produced experimental $\epsilon_1^{b}$(0) values of 48$\pm$10, 82$\pm$10, 58$\pm$10, and 29$\pm$5, respectively, which are in good agreement with values obtained using first-principles calculations. These values are much higher than those for noble metals such as Cu, Ag, and Au because transition metals and IrO$_2$ have such strong d-d transitions below 2.0 eV. High $\epsilon_1^{b}$(0) values will reduce the depolarization field in ferroelectric capacitors, making these materials good candidates for use as electrodes in ferroelectric applications.Comment: 26 pages, 6 figures, 2 table

Phonon-mediated electron spin phase diffusion in a quantum dot

An effective spin relaxation mechanism that leads to electron spin decoherence in a quantum dot is proposed. In contrast to the common calculations of spin-flip transitions between the Kramers doublets, we take into account a process of phonon-mediated fluctuation in the electron spin precession and subsequent spin phase diffusion. Specifically, we consider modulations in the longitudinal g-factor and hyperfine interaction induced by the phonon-assisted transitions between the lowest electronic states. Prominent differences in the temperature and magnetic field dependence between the proposed mechanisms and the spin-flip transitions are expected to facilitate its experimental verification. Numerical estimation demonstrates highly efficient spin relaxation in typical semiconductor quantum dots.Comment: 5 pages, 1 figur

Rich variety of defects in ZnO via an attractive interaction between O-vacancies and Zn-interstitials

As the concentration of intrinsic defects becomes sufficiently high in O-deficient ZnO, interactions between defects lead to a significant reduction in their formation energies. We show that the formation of both O-vacancies and Zn-interstitials becomes significantly enhanced by a strong attractive interaction between them, making these defects an important source of n-type conductivity in ZnO.Comment: 12 pages, 4 figure

Two non-commutative parameters and regular cosmological phase transition in the semi-classical dilaton cosmology

We study cosmological phase transitions from modified equations of motion by introducing two non-commutative parameters in the Poisson brackets, which describes the initial- and future-singularity-free phase transition in the soluble semi-classical dilaton gravity with a non-vanishing cosmological constant. Accelerated expansion and decelerated expansion corresponding to the FRW phase appear alternatively, and then it ends up with the second accelerated expansion. The final stage of the universe approaches the flat spacetime independent of the initial state of the curvature scalar as long as the product of the two non-commutative parameters is less than one. Finally, we show that the initial-singularity-free condition is related to the second accelerated expansion of the universe.Comment: 13 pages, 4 figures; v2. to appear in Mod. Phys. Lett.