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The Role of Nonequilibrium Dynamical Screening in Carrier Thermalization
We investigate the role played by nonequilibrium dynamical screening in the
thermalization of carriers in a simplified two-component two-band model of a
semiconductor. The main feature of our approach is the theoretically sound
treatment of collisions. We abandon Fermi's Golden rule in favor of a
nonequilibrium field theoretic formalism as the former is applicable only in
the long-time regime. We also introduce the concept of nonequilibrium dynamical
screening. The dephasing of excitonic quantum beats as a result of
carrier-carrier scattering is brought out. At low densities it is found that
the dephasing times due to carrier-carrier scattering is in picoseconds and not
femtoseconds, in agreement with experiments. The polarization dephasing rates
are computed as a function of the excited carrier density and it is found that
the dephasing rate for carrier-carrier scattering is proportional to the
carrier density at ultralow densities. The scaling relation is sublinear at
higher densities, which enables a comparison with experiment.Comment: Revised version with additional refs. 12 pages, figs. available upon
request; Submitted to Phys. Rev.