Doping a semiconductor to create an unconventional metal

Landau Fermi liquid theory, with its pivotal assertion that electrons in metals can be simply understood as independent particles with effective masses replacing the free electron mass, has been astonishingly successful. This is true despite the Coulomb interactions an electron experiences from the host crystal lattice, its defects, and the other ~1022/cm3 electrons. An important extension to the theory accounts for the behaviour of doped semiconductors1,2. Because little in the vast literature on materials contradicts Fermi liquid theory and its extensions, exceptions have attracted great attention, and they include the high temperature superconductors3, silicon-based field effect transistors which host two-dimensional metals4, and certain rare earth compounds at the threshold of magnetism5-8. The origin of the non-Fermi liquid behaviour in all of these systems remains controversial. Here we report that an entirely different and exceedingly simple class of materials - doped small gap semiconductors near a metal-insulator transition - can also display a non-Fermi liquid state. Remarkably, a modest magnetic field functions as a switch which restores the ordinary disordered Fermi liquid. Our data suggest that we have finally found a physical realization of the only mathematically rigourous route to a non-Fermi liquid, namely the 'undercompensated Kondo effect', where there are too few mobile electrons to compensate for the spins of unpaired electrons localized on impurity atoms9-12.Comment: 17 pages 4 figures supplemental information included with 2 figure

Pressure-induced quantum phase transition in Fe₁−ᵪCoᵪSi (x = 0.1,0.2)

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Linear magnetoresistance in commercial n-type silicon due to inhomogeneous doping

Free electron theory tells us that resistivity is independent of magnetic field. In fact, most observations match the semiclassical prediction of a magnetoresistance that is quadratic at low fields before saturating. However, a non-saturating linear magnetoresistance has been observed in exotic semiconductors such as silver chalcogenides, lightly-doped InSb, N-doped InAs, MnAs-GaAs composites, PrFeAsO, and epitaxial graphene. Here we report the observation of a large linear magnetoresistance in the ohmic regime in commonplace commercial n-type silicon wafer. It is well-described by a classical model of spatially fluctuating donor densities, and may be amplified by altering the aspect ratio of the sample to enhance current-jetting: increasing the width tenfold increased the magnetoresistance at 8 T from 445 % to 4707 % at 35 K. This physical picture may well offer insights into the large magnetoresistances recently observed in n-type and p-type Si in the non-ohmic regime.Comment: submitted to Nature Material

Resistivity of Mn1−x_{1-x}Fex_xSi single crystals: Evidence for quantum critical behavior

Resistivity measurements have been made on Mn$_{1-x}$Fe$_x$Si single crystals between 2 and 300K for $x$ = 0, 0.05, 0.08, 0.12 and 0.15. Fe doping is found to depress the magnetic ordering temperature from 30K for $x$ = 0 to below 2K for $x$ = 0.15. Although Fe doping results in a large increase of the low-temperature residual resistivity, the temperature dependence of the resistivity above the magnetic transition remains practically unaffected by increasing Fe content. An analysis of the temperature derivative of the resistivity provides strong evidence for the existence of a non-Fermi-liquid ground state near $x$ = 0.15 and thus for a quantum critical point tuned by Fe content.Comment: 9 pages, 4 figures, Proceedings of the NATO Advanced Research Workshop on Properties and Application of Thermoelectric Materials, Hvar, Croatia, 21-26 September 200

Microwave assisted synthesis of MnO2 on nickel foam-graphene for electrochemical capacitor

A green chemistry approach (hydrothermal microwave irradiation) has been used to deposit manganese oxide on nickel foam-graphene. The 3D graphene was synthesized using nickel foam template by chemical vapor deposition (CVD) technique. Raman spectroscopy, X-ray diffraction (XRD), scanning electron and transmission electron microscopies (SEM and TEM) have been used to characterize structure and surface morphology of the composite, respectively. The Raman spectroscopy measurements on the samples reveal that 3D graphene consists of mostly few layers with low defect density. The composite was tested in a three electrode configuration for electrochemical capacitor, and exhibited a specific capacitance of 305 F g−1 at a current density of 1Ag−1 and showed excellent cycling stability. The obtained results demonstrate that microwave irradiation technique could be a promising approach to synthesis graphene based functional materials for electrochemical applications.The South African Research Chairs Initiative of the Department of Science and Technology (SARCHi-DST) and the National Research Foundation (NRF). A. Bello, M. Fabiane, and O.O. Fashedemi acknowledge financial support from University of Pretoria and NRF for PhD bursaries.http://www.elsevier.com/locate/electactahb2016ChemistryPhysic

Large Anomalous Hall effect in a silicon-based magnetic semiconductor

Magnetic semiconductors are attracting high interest because of their potential use for spintronics, a new technology which merges electronics and manipulation of conduction electron spins. (GaMn)As and (GaMn)N have recently emerged as the most popular materials for this new technology. While Curie temperatures are rising towards room temperature, these materials can only be fabricated in thin film form, are heavily defective, and are not obviously compatible with Si. We show here that it is productive to consider transition metal monosilicides as potential alternatives. In particular, we report the discovery that the bulk metallic magnets derived from doping the narrow gap insulator FeSi with Co share the very high anomalous Hall conductance of (GaMn)As, while displaying Curie temperatures as high as 53 K. Our work opens up a new arena for spintronics, involving a bulk material based only on transition metals and Si, and which we have proven to display a variety of large magnetic field effects on easily measured electrical properties.Comment: 19 pages with 5 figure

Distribution of Potentially toxic elements in Water, Sediment and Soils in the Riparian Zones around a Kraft Pulp and Paper Mill in Western Kenya

This chapter discusses the impact of effluent discharge on the distribution of potentially toxic elements (Pb, Cd, Cu and Zn) in water, sediments and soils near a Kraft mill in Western Kenya. Potentially Toxic Elements (PTEs) concentrations were determined at three sites: Water Intake Point, Effluent Discharge Point and Downstream Point. The mill liquid effluent parameters and gaseous emissions were also characterized. One-way ANOVA was used to analyze the spatial differences in PTEs concentrations. Principal component analysis determined the correlations between the proximity to the Kraft mill and the PTEs in soils, water and sediments. In riverine soils, Cd was 0.78 ± 0.01 mg/kg, while Pb was 94.38 ± 9.65 mg/kg. In sediments, the concentration was 16.81 ± 2.46 mg/kg for Zn, 6.16 ± 0.72 mg/kg for Cd and 75.28 ± 5.97 mg/kg for Pb. In water, Zn was 0.26 ± 0.038 mg/L, Cu was 0.75 ± 0.11 mg/L, Cd was 0.05 ± 0.004 mg/L and Pb was 1.26 ± 9.65 mg/L. The spatial distributions of PTEs in soils near the factory and across the river may have resulted from the factory’s effluent discharge and gaseous emissions. These findings should help formulate more stringent industrial effluent management programs in Western Kenya

Nickel-copper graphene foam prepared by atmospheric pressure chemical vapour deposition for supercapacitor applications

Please read abstract in the article.The National Research Foundation (NRF) of South Africa via iThemba LABS Materials Research Department (MRD) and the South African Research Chairs Initiative (SARChI) of the Department of Science and Technology and the NRF.http://elsevier.com/locate/surfcoathj2021Physic

Interesting magnetic properties of Fe1−x_{1-x}Cox_xSi alloys

Solid solution between nonmagnetic narrow gap semiconductor FeSi and diamagnetic semi-metal CoSi gives rise to interesting metallic alloys with long-range helical magnetic ordering, for a wide range of intermediate concentration. We report various interesting magnetic properties of these alloys, including low temperature re-entrant spin-glass like behaviour and a novel inverted magnetic hysteresis loop. Role of Dzyaloshinski-Moriya interaction in the magnetic response of these non-centrosymmetric alloys is discussed.Comment: 11 pages and 3 figure