Capture of carriers to screened charged centres and low temperature shallow impurity electric field break down in semiconductors

Free carrier capture by a screened Coulomb potential in semiconductors are considered. It is established that with decreasing screening radius the capture cross section decreases drastically, and it goes to zero when $$. On the basis of this result a new mechanism of shallow impurity electric field break down in semiconductors is suggested.Comment: 8 pages, latex, 1 figure in gif format, to be submitted to "Journal of Condensed Matter

Generation of spin currents via Raman scattering

We show theoretically that stimulated spin flip Raman scattering can be used to inject spin currents in doped semiconductors with spin split bands. A pure spin current, where oppositely oriented spins move in opposite directions, can be injected in zincblende crystals and structures. The calculated spin current should be detectable by pump-probe optical spectroscopy and anomalous Hall effect measurement

Određivanje vrijednosti obrta vijka okularnog mikrometra

Određivanje vrijednosti obrta vijka okularnog mikrometra

Tunneling spin-galvanic effect

It has been shown that tunneling of spin-polarized electrons through a semiconductor barrier is accompanied by generation of an electric current in the plane of the interfaces. The direction of this interface current is determined by the spin orientation of the electrons, in particular the current changes its direction if the spin orientation changes the sign. Microscopic origin of such a 'tunneling spin-galvanic' effect is the spin-orbit coupling-induced dependence of the barrier transparency on the spin orientation and the wavevector of electrons.Comment: 3 pages, 2 figure

Određivanje vrijednosti obrta vijka okularnog mikrometra

Određivanje vrijednosti obrta vijka okularnog mikrometra

Nekoliko riječi o članku "Kompariranje invarne vrpce H 2567"

Nekoliko riječi o članku "Kompariranje invarne vrpce H 2567"

Nekoliko riječi o članku "Kompariranje invarne vrpce H 2567"

Nekoliko riječi o članku "Kompariranje invarne vrpce H 2567"

Correlation effects in sequential energy branching: an exact model of the Fano statistics

Correlation effects in in the fluctuation of the number of particles in the process of energy branching by sequential impact ionizations are studied using an exactly soluble model of random parking on a line. The Fano factor F calculated in an uncorrelated final-state "shot-glass" model does not give an accurate answer even with the exact gap-distribution statistics. Allowing for the nearest-neighbor correlation effects gives a correction to F that brings F very close to its exact value. We discuss the implications of our results for energy resolution of semiconductor gamma detectors, where the value of F is of the essence. We argue that F is controlled by correlations in the cascade energy branching process and hence the widely used final-state model estimates are not reliable -- especially in the practically relevant cases when the energy branching is terminated by competition between impact ionization and phonon emission.Comment: 11 pages, 4 figures. Submitted to Physical Review

Theory of transient spectroscopy of multiple quantum well structures

A theory of the transient spectroscopy of quantum well (QW) structures under a large applied bias is presented. An analytical model of the initial part of the transient current is proposed. The time constant of the transient current depends not only on the emission rate from the QWs, as is usually assumed, but also on the subsequent carrier transport across QWs. Numerical simulation was used to confirm the validity of the proposed model, and to study the transient current on a larger time scale. It is shown that the transient current is influenced by the nonuniform distribution of the electric field and related effects, which results in a step-like behavior of the current. A procedure of extraction of the QW emission time from the transient spectroscopy experiments is suggested.Comment: 5 pages, 4 figures, to be published in J. Appl. Phy

Characterization of deep impurities in semiconductors by terahertz tunneling ionization

Tunneling ionization in high frequency fields as well as in static fields is suggested as a method for the characterization of deep impurities in semiconductors. It is shown that an analysis of the field and temperature dependences of the ionization probability allows to obtain defect parameters like the charge of the impurity, tunneling times, the Huang–Rhys parameter, the difference between optical and thermal binding energy, and the basic structure of the defect adiabatic potentials. Compared to static fields, high frequency electric fields in the terahertz-range offer various advantages, as they can be applied contactlessly and homogeneously even to bulk samples using the intense radiation of a high power pulsed far-infrared laser. Furthermore, impurity ionization with terahertz radiation can be detected as photoconductive signal with a very high sensitivity in a wide range of electric field strengths