A broadband microwave Corbino spectrometer at 3^3He temperatures and high magnetic fields

We present the technical details of a broadband microwave spectrometer for measuring the complex conductance of thin films covering the range from 50 MHz up to 16 GHz in the temperature range 300 mK to 6 K and at applied magnetic fields up to 8 Tesla. We measure the complex reflection from a sample terminating a coaxial transmission line and calibrate the signals with three standards with known reflection coefficients. Thermal isolation of the heat load from the inner conductor is accomplished by including a section of NbTi superconducting cable (transition temperature around 8 $-$ 9 K) and hermetic seal glass bead adapters. This enables us to stabilize the base temperature of the sample stage at 300 mK. However, the inclusion of this superconducting cable complicates the calibration procedure. We document the effects of the superconducting cable on our calibration procedure and the effects of applied magnetic fields and how we control the temperature with great repeatability for each measurement. We have successfully extracted reliable data in this frequency, temperature and field range for thin superconducting films and highly resistive graphene samples

Reduction of Effective Terahertz Focal Spot Size By Means Of Nested Concentric Parabolic Reflectors

An ongoing limitation of terahertz spectroscopy is that the technique is generally limited to the study of relatively large samples of order 4 mm across due to the generally large size of the focal beam spot. We present a nested concentric parabolic reflector design which can reduce the terahertz focal spot size. This parabolic reflector design takes advantage of the feature that reflected rays experience a relative time delay which is the same for all paths. The increase in effective optical path for reflected light is equivalent to the aperture diameter itself. We have shown that the light throughput of an aperture of 2 mm can be increased by a factor 15 as compared to a regular aperture of the same size at low frequencies. This technique can potentially be used to reduce the focal spot size in terahertz spectroscopy and enable the study of smaller samples

The effect of electromechanical coupling on the strain in AlGaN/GaN heterojunction field effect transistors

The strain in AlGaN/GaN heterojunction field-effect transistors (HFETs) is examined theoretically in the context of the fully-coupled equation of state for piezoelectric materials. Using a simple analytical model, it is shown that, in the absence of a two-dimensional electron gas (2DEG), the out-of-plane strain obtained without electromechanical coupling is in error by about 30% for an Al fraction of 0.3. This result has consequences for the calculation of quantities that depend directly on the strain tensor. These quantities include the eigenstates and electrostatic potential in AlGaN/GaN heterostructures. It is shown that for an HFET, the electromechanical coupling is screened by the 2DEG. Results for the electromechanical model, including the 2DEG, indicate that the standard (decoupled) strain model is a reasonable approximation for HFET calculataions. The analytical results are supported by a self-consistent Schr\"odinger-Poisson calculation that includes the fully-coupled equation of state together with the charge-balance equation.Comment: 6 figures, revte