676 research outputs found
Electronic spin drift in graphene field effect transistors
We studied the drift of electron spins under an applied DC electric field in
single layer graphene spin valves in a field effect transport geometry at room
temperature. In the metallic conduction regime (
m), for DC fields of about 70 kV/m applied between the spin
injector and spin detector, the spin valve signals are increased/decreased,
depending on the direction of the DC field and the carrier type, by as much as
50%. Sign reversal of the drift effect is observed when switching from
hole to electron conduction. In the vicinity of the Dirac neutrality point the
drift effect is strongly suppressed. The experiments are in quantitative
agreement with a drift-diffusion model of spin transport.Comment: 4 figure
Controlling the efficiency of spin injection into graphene by carrier drift
Electrical spin injection from ferromagnetic metals into graphene is hindered
by the impedance mismatch between the two materials. This problem can be
reduced by the introduction of a thin tunnel barrier at the interface. We
present room temperature non-local spin valve measurements in
cobalt/aluminum-oxide/graphene structures with an injection efficiency as high
as 25%, where electrical contact is achieved through relatively transparent
pinholes in the oxide. This value is further enhanced to 43% by applying a DC
current bias on the injector electrodes, that causes carrier drift away from
the contact. A reverse bias reduces the AC spin valve signal to zero or
negative values. We introduce a model that quantitatively predicts the behavior
of the spin accumulation in the graphene under such circumstances, showing a
good agreement with our measurements.Comment: 4 pages, 3 color figure
Pemphigus foliaceus
Pemphigus foliaceus (PF) is a group of autoimmune skin blistering disease comprising four subtypes: Cazenave, endemic, erythematosus and herpetiformis. The common characteristic is the frequent presence of pathogenic anti-desmoglein 1 antibodies leading to bullae in the skin. Other characteristics-clinical, histological, pathogenesis and therapy-vary and are specified in this chapter. Pemphigus foliaceus first described by Cazenave is the classical form of PF. The elemental dermatological lesions are erythematous plaques with pastry puff squames predominantly affecting seborrhoeic areas. The histopathological hallmark is acantholysis in the upper part of the epidermis (subcorneal or intraspinous). The disease is caused by autoantibodies to desmoglein 1 on the epithelial cell surface. Therapy is based on systemic corticosteroids, rituximab and immunosuppressive adjuvants. Rituximab an anti-CD20 biologics targeting B-lymphocytes have changed the prognosis of the disease from chronic relapsing to long-term remissions. Endemic pemphigus is a variant of PF. The disease is endemic in South-American countries especially in rural regions of Brazil, but also in Colombia, Paraguay, Peru, Venezuela and also in Africa in Tunisia. The histopathology, immunology and therapy are similar to classical form of PF.</p
Large yield production of high mobility freely suspended graphene electronic devices on a PMGI based organic polymer
The recent observation of fractional quantum Hall effect in high mobility
suspended graphene devices introduced a new direction in graphene physics, the
field of electron-electron interaction dynamics. However, the technique used
currently for the fabrication of such high mobility devices has several
drawbacks. The most important is that the contact materials available for
electronic devices are limited to only a few metals (Au, Pd, Pt, Cr and Nb)
since only those are not attacked by the reactive acid (BHF) etching
fabrication step. Here we show a new technique which leads to mechanically
stable suspended high mobility graphene devices which is compatible with almost
any type of contact material. The graphene devices prepared on a
polydimethylglutarimide based organic resist show mobilities as high as 600.000
cm^2/Vs at an electron carrier density n = 5.0 10^9 cm^-2 at 77K. This
technique paves the way towards complex suspended graphene based spintronic,
superconducting and other types of devices.Comment: 14 pages, 4 figure
Electronic spin transport in graphene field effect transistors
Spin transport experiments in graphene, a single layer of carbon atoms,
indicate spin relaxation times that are significantly shorter than the
theoretical predictions. We investigate experimentally whether these short spin
relaxation times are due to extrinsic factors, such as spin relaxation caused
by low impedance contacts, enhanced spin flip processes at the device edges or
the presence of an aluminium oxide layer on top of graphene in some samples.
Lateral spin valve devices using a field effect transistor geometry allowed for
the investigation of the spin relaxation as a function of the charge density,
going continuously from metallic hole to electron conduction (charge densities
of cm) via the Dirac charge neutrality point (). The results are quantitatively described by a one dimensional spin
diffusion model where the spin relaxation via the contacts is taken into
account. Spin valve experiments for various injector/detector separations and
spin precession experiments reveal that the longitudinal (T) and the
transversal (T) relaxation times are similar. The anisotropy of the spin
relaxation times and , when the spins are injected
parallel or perpendicular to the graphene plane, indicates that the effective
spin orbit fields do not lie exclusively in the two dimensional graphene plane.
Furthermore, the proportionality between the spin relaxation time and the
momentum relaxation time indicates that the spin relaxation mechanism is of the
Elliott-Yafet type. For carrier mobilities of 2-5 cm2^/Vs and
for graphene flakes of 0.1-2 m in width, we found spin relaxation times of
the order of 50-200 ps, times which appear not to be determined by the
extrinsic factors mentioned above.Comment: 11 pages, 13 figure
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