Outstanding reliability of heavy ion irradiated AlInN/GaN on silicon HFETs

AlInN/GaN heterostructure field-effect transistors (HFETs) grown on silicon withstand irradiation with 75-MeV sulfur ions up to fluences of 5.5 times 10 ^{13} ions/cm2. The static transistor operation characteristics of the devices exhibit a shift of the threshold voltage and a decrease in the saturation and the OFF-state current. Microphotoluminescence spectroscopy reveals a decrease in the electron carrier density in the channel region. Simulations were performed to model the damage caused to the devices assuming the generation of acceptor-like defects upon irradiation. It turns out that the degradation depends on the thickness of the buffer layer. Therefore, we propose the reduction in the thickness of the buffer layer as a way to increase the radiation tolerance of HFETs.Fil: Vega, Nahuel Agustín. Comisión Nacional de Energía Atómica. Centro Atómico Constituyentes. Gerencia de Investigación y Aplicaciones; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Dadgar, Armin. Otto-von-Guericke-Universität Magdeburg; AlemaniaFil: Strittmatter, Andre. Otto-von-Guericke-Universität Magdeburg; AlemaniaFil: Challa, Seshagiri R.. Otto-von-Guericke-Universität Magdeburg; AlemaniaFil: Ferreyra, Romualdo Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Ciencias Físicas. - Universidad Nacional de San Martín. Instituto de Ciencias Físicas; ArgentinaFil: Kristukat, Christian. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; ArgentinaFil: Muller, Nahuel A.. Comisión Nacional de Energía Atómica. Centro Atómico Constituyentes. Gerencia de Investigación y Aplicaciones; ArgentinaFil: Debray, Mario Ernesto. Comisión Nacional de Energía Atómica. Centro Atómico Constituyentes. Gerencia de Investigación y Aplicaciones; ArgentinaFil: Schmidt, Gordon. Otto-von-Guericke-Universität Magdeburg; AlemaniaFil: Witte, Hartmut. Otto-von-Guericke-Universität Magdeburg; AlemaniaFil: Christen, Jurgen. Otto-von-Guericke-Universität Magdeburg; Alemani

Annual Report 2022

This report summarises the activities and main achievements of the CERN strategic R&D programme on technologies for future experiments during the year 202

Extension of the R&D Programme on Technologies for Future Experiments

we have conceived an extension of the R&D programme covering the period 2024 to 2028, i.e. again a 5-year period, however with 2024 as overlap year. This step was encouraged by the success of the current programme but also by the Europe-wide efforts to launch new Detector R&D collaborations in the framework of the ECFA Detector R&D Roadmap. We propose to continue our R&D programme with the main activities in essentially the same areas. All activities are fully aligned with the ECFA Roadmap and in most cases will be carried out under the umbrella of one of the new DRD collaborations. The program is a mix of natural continuations of the current activities and a couple of very innovative new developments, such as a radiation hard embedded FPGA implemented in an ASIC based on System-on-Chip technology. A special and urgent topic is the fabrication of Al-reinforced super-conducting cables. Such cables are a core ingredient of any new superconducting magnet such as BabyIAXO, PANDA, EIC, ALICE-3 etc. Production volumes are small and demands come in irregular intervals. Industry (world-wide) is no longer able and willing to fabricate such cables. The most effective approach (technically and financially) may be to re-invent the process at CERN, together with interested partners, and offer this service to the community

Annual Report 2023 and Phase-I Closeout

This report summarises the activities of the CERN strategic R&D programme on technologies for future experiments during the year 2023, and highlights the achievements of the programme during its first phase 2020-2023