Efficient orthogonal control of tunnel couplings in a quantum dot array

Electrostatically-defined semiconductor quantum dot arrays offer a promising platform for quantum computation and quantum simulation. However, crosstalk of gate voltages to dot potentials and inter-dot tunnel couplings complicates the tuning of the device parameters. To date, crosstalk to the dot potentials is routinely and efficiently compensated using so-called virtual gates, which are specific linear combinations of physical gate voltages. However, due to exponential dependence of tunnel couplings on gate voltages, crosstalk to the tunnel barriers is currently compensated through a slow iterative process. In this work, we show that the crosstalk on tunnel barriers can be efficiently characterized and compensated for, using the fact that the same exponential dependence applies to all gates. We demonstrate efficient calibration of crosstalk in a quadruple quantum dot array and define a set of virtual barrier gates, with which we show orthogonal control of all inter-dot tunnel couplings. Our method marks a key step forward in the scalability of the tuning process of large-scale quantum dot arrays.Comment: 8 pages, 7 figure

Automated tuning of inter-dot tunnel couplings in quantum dot arrays

Semiconductor quantum dot arrays defined electrostatically in a 2D electron gas provide a scalable platform for quantum information processing and quantum simulations. For the operation of quantum dot arrays, appropriate voltages need to be applied to the gate electrodes that define the quantum dot potential landscape. Tuning the gate voltages has proven to be a time-consuming task, because of initial electrostatic disorder and capacitive cross-talk effects. Here, we report on the automated tuning of the inter-dot tunnel coupling in a linear array of gate-defined semiconductor quantum dots. The automation of the tuning of the inter-dot tunnel coupling is the next step forward in scalable and efficient control of larger quantum dot arrays. This work greatly reduces the effort of tuning semiconductor quantum dots for quantum information processing and quantum simulation

A 2 × 2 quantum dot array with controllable inter-dot tunnel couplings

© 2018 Author(s). The interaction between electrons in arrays of electrostatically defined quantum dots is naturally described by a Fermi-Hubbard Hamiltonian. Moreover, the high degree of tunability of these systems makes them a powerful platform to simulate different regimes of the Hubbard model. However, most quantum dot array implementations have been limited to one-dimensional linear arrays. In this letter, we present a square lattice unit cell of 2 × 2 quantum dots defined electrostatically in an AlGaAs/GaAs heterostructure using a double-layer gate technique. We probe the properties of the array using nearby quantum dots operated as charge sensors. We show that we can deterministically and dynamically control the charge occupation in each quantum dot in the single- to few-electron regime. Additionally, we achieve simultaneous individual control of the nearest-neighbor tunnel couplings over a range of 0-40 μeV. Finally, we demonstrate fast (∼1 μs) single-shot readout of the spin state of electrons in the dots through spin-to-charge conversion via Pauli spin blockade. These advances pave the way for analog quantum simulations in two dimensions, not previously accessible in quantum dot systems

Dynamics of magnetic modulation of ferrofluid droplets for digital microfluidic applications

Active control of droplet generation in a microfluidic platform attracts interest for development of digital microfluidic devices ranging from biosensors to micro-reactors to point-of-care diagnostic devices. The present paper characterizes, through an unsteady three-dimensional Volume of Fluid (VOF) simulation, the active control of ferrofluid droplet generation in a microfluidic T-junction in presence of a non-uniform magnetic field created by an external magnetic dipole. Two distinctly different positions of the dipole were considered – one upstream of the junction and one downstream. While keeping the ferrofluid flow rate fixed, a parametric variation of the continuous phase capillary number, dipole strength, and dipole position was carried out. Differences in the flow behaviour in terms of dripping or jetting and the droplet characteristics in terms of droplet formation time period and droplet size were studied. The existence of a threshold dipole strength, below which the magnetic force was not able to influence the flow behaviour, was identified. It was also observed that, for dipoles placed upstream of the junction, droplet formation was suppressed at some higher dipole strengths, and this value was found to increase with increasing capillary number. Droplet time period was also found to increase with increasing dipole strength, along with droplet size, i.e. an increase in droplet volume

Accretion of Chaplygin gas upon black holes: Formation of faster outflowing winds

We study the accretion of modified Chaplygin gas upon different types of black hole. Modified Chaplygin gas is one of the best candidates for a combined model of dark matter and dark energy. In addition, from a field theoretical point of view the modified Chaplygin gas model is equivalent to that of a scalar field having a self-interacting potential. We formulate the equations related to both spherical accretion and disc accretion, and respective winds. The corresponding numerical solutions of the flow, particularly of velocity, are presented and are analyzed. We show that the accretion-wind system of modified Chaplygin gas dramatically alters the wind solutions, producing faster winds, upon changes in physical parameters, while accretion solutions qualitatively remain unaffected. This implies that modified Chaplygin gas is more prone to produce outflow which is the natural consequence of the dark energy into the system.Comment: 21 pages including 7 figures; published in Classical and Quantum Gravit

High-spin structure and Band Termination in 103^{103}Cd

Excited states of the neutron deficient $^{103}$Cd nucleus have been investigated via the $^{72}$Ge($^{35}$Cl, p3n) reaction at beam energy of 135 MeV by use of in-beam spectroscopic methods. Gamma rays depopulating the excited states were detected using the Gammasphere spectrometer with high-fold $\gamma$-ray coincidences. A quadrupole $\gamma$-ray coincidence analysis ($\gamma^{4}$) has been used to extend the known level scheme. The positive parity levels have been established up to $J = 35/2\hbar$ and $E_{x} = 7.071$ MeV. In addition to the observation of highly-fragmented level scheme belonging to the positive-parity sequences at E$_{x}\sim$ 5 MeV, the termination of a negative-parity sequence connected by $E2$ transitions has been established at $J = 47/2 \hbar$ and $E_{x} = 11.877$ MeV. The experimental results corresponding to both the positive- and negative-parity sequences have been theoretically interpreted in the framework of the core particle coupling model. Evidence is presented for a shape change from collective prolate to non-collective oblate above the $J^{\pi} = 39/2^{-}$ (8011 keV) level and for a smooth termination of the negative-parity band.Comment: 19 pages, 8 figures. Submitted to Phys. Rev.