2,605 research outputs found
Efficient orthogonal control of tunnel couplings in a quantum dot array
Electrostatically-defined semiconductor quantum dot arrays offer a promising
platform for quantum computation and quantum simulation. However, crosstalk of
gate voltages to dot potentials and inter-dot tunnel couplings complicates the
tuning of the device parameters. To date, crosstalk to the dot potentials is
routinely and efficiently compensated using so-called virtual gates, which are
specific linear combinations of physical gate voltages. However, due to
exponential dependence of tunnel couplings on gate voltages, crosstalk to the
tunnel barriers is currently compensated through a slow iterative process. In
this work, we show that the crosstalk on tunnel barriers can be efficiently
characterized and compensated for, using the fact that the same exponential
dependence applies to all gates. We demonstrate efficient calibration of
crosstalk in a quadruple quantum dot array and define a set of virtual barrier
gates, with which we show orthogonal control of all inter-dot tunnel couplings.
Our method marks a key step forward in the scalability of the tuning process of
large-scale quantum dot arrays.Comment: 8 pages, 7 figure
Automated tuning of inter-dot tunnel couplings in quantum dot arrays
Semiconductor quantum dot arrays defined electrostatically in a 2D electron
gas provide a scalable platform for quantum information processing and quantum
simulations. For the operation of quantum dot arrays, appropriate voltages need
to be applied to the gate electrodes that define the quantum dot potential
landscape. Tuning the gate voltages has proven to be a time-consuming task,
because of initial electrostatic disorder and capacitive cross-talk effects.
Here, we report on the automated tuning of the inter-dot tunnel coupling in a
linear array of gate-defined semiconductor quantum dots. The automation of the
tuning of the inter-dot tunnel coupling is the next step forward in scalable
and efficient control of larger quantum dot arrays. This work greatly reduces
the effort of tuning semiconductor quantum dots for quantum information
processing and quantum simulation
A 2 × 2 quantum dot array with controllable inter-dot tunnel couplings
© 2018 Author(s). The interaction between electrons in arrays of electrostatically defined quantum dots is naturally described by a Fermi-Hubbard Hamiltonian. Moreover, the high degree of tunability of these systems makes them a powerful platform to simulate different regimes of the Hubbard model. However, most quantum dot array implementations have been limited to one-dimensional linear arrays. In this letter, we present a square lattice unit cell of 2 × 2 quantum dots defined electrostatically in an AlGaAs/GaAs heterostructure using a double-layer gate technique. We probe the properties of the array using nearby quantum dots operated as charge sensors. We show that we can deterministically and dynamically control the charge occupation in each quantum dot in the single- to few-electron regime. Additionally, we achieve simultaneous individual control of the nearest-neighbor tunnel couplings over a range of 0-40 μeV. Finally, we demonstrate fast (∼1 μs) single-shot readout of the spin state of electrons in the dots through spin-to-charge conversion via Pauli spin blockade. These advances pave the way for analog quantum simulations in two dimensions, not previously accessible in quantum dot systems
Dynamics of magnetic modulation of ferrofluid droplets for digital microfluidic applications
Active control of droplet generation in a microfluidic platform attracts interest for development of digital microfluidic devices ranging from biosensors to micro-reactors to point-of-care diagnostic devices. The present paper characterizes, through an unsteady three-dimensional Volume of Fluid (VOF) simulation, the active control of ferrofluid droplet generation in a microfluidic T-junction in presence of a non-uniform magnetic field created by an external magnetic dipole. Two distinctly different positions of the dipole were considered – one upstream of the junction and one downstream. While keeping the ferrofluid flow rate fixed, a parametric variation of the continuous phase capillary number, dipole strength, and dipole position was carried out. Differences in the flow behaviour in terms of dripping or jetting and the droplet characteristics in terms of droplet formation time period and droplet size were studied. The existence of a threshold dipole strength, below which the magnetic force was not able to influence the flow behaviour, was identified. It was also observed that, for dipoles placed upstream of the junction, droplet formation was suppressed at some higher dipole strengths, and this value was found to increase with increasing capillary number. Droplet time period was also found to increase with increasing dipole strength, along with droplet size, i.e. an increase in droplet volume
Accretion of Chaplygin gas upon black holes: Formation of faster outflowing winds
We study the accretion of modified Chaplygin gas upon different types of
black hole. Modified Chaplygin gas is one of the best candidates for a combined
model of dark matter and dark energy. In addition, from a field theoretical
point of view the modified Chaplygin gas model is equivalent to that of a
scalar field having a self-interacting potential. We formulate the equations
related to both spherical accretion and disc accretion, and respective winds.
The corresponding numerical solutions of the flow, particularly of velocity,
are presented and are analyzed. We show that the accretion-wind system of
modified Chaplygin gas dramatically alters the wind solutions, producing faster
winds, upon changes in physical parameters, while accretion solutions
qualitatively remain unaffected. This implies that modified Chaplygin gas is
more prone to produce outflow which is the natural consequence of the dark
energy into the system.Comment: 21 pages including 7 figures; published in Classical and Quantum
Gravit
High-spin structure and Band Termination in Cd
Excited states of the neutron deficient Cd nucleus have been
investigated via the Ge(Cl, p3n) reaction at beam energy of 135
MeV by use of in-beam spectroscopic methods. Gamma rays depopulating the
excited states were detected using the Gammasphere spectrometer with high-fold
-ray coincidences. A quadrupole -ray coincidence analysis
() has been used to extend the known level scheme. The positive
parity levels have been established up to and
MeV. In addition to the observation of highly-fragmented level scheme belonging
to the positive-parity sequences at E 5 MeV, the termination of a
negative-parity sequence connected by transitions has been established at
and MeV. The experimental results
corresponding to both the positive- and negative-parity sequences have been
theoretically interpreted in the framework of the core particle coupling model.
Evidence is presented for a shape change from collective prolate to
non-collective oblate above the (8011 keV) level and for a
smooth termination of the negative-parity band.Comment: 19 pages, 8 figures. Submitted to Phys. Rev.
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