Lab- and field-test results of MFIG, the first real-time vacuum-contamination sensor

To produce high-end products, clean vacuum is often required. Even small amounts of high-mass molecules can reduce product yield. The challenge is to timely detect the presence of relevant contaminants. Here is where MFIG can help1. The massfiltered ion gauge sensor (MFIG) continuously and selectively monitors the presence of high-mass contaminant molecules with a sensitivity down to 1E-13 mbar at total pressuresup to 1E-5mbar. This contribution presents field-test data to demonstrate the capabilities of the latest MFIG sensor in continuously and selectively detecting high-mass contaminant moleculesin (U)HVvacuum

Photonic integration and fabrication technologies for on-chip active nano-devices in double tungstate gain materials

Potassium double tungstates doped with different rare-earth (RE) ions, have been shown as promising materials to provide high, broadband, stable gain at different wavelengths including ~1 μm (Yb3+), 1.55 μm (Er3+) and ~2 μm (Tm3+). In this paper, the utilization of this material in nanophotonic platforms will be presented. Several plasmonic structures of interest have been theoretically proposed. The integration and fabrication techniques required to produce these devices, namely bonding, thin layer transfer and focused ion beam milling have been developed. This work represents the first step towards the utilization of rare-earth doped double tungstates in nanophotonics

Characterization of optical strain sensors based on silicon waveguides

Strain gauges are widely employed in microelectromechanical systems (MEMS) for sensing of, for example, deformation, acceleration, pressure, or sound [1]. Such gauges are typically based on electronic piezoresistivity. We propose integrated optical sensors which have particular benefits: insensitivity to electromagnetic interference, no danger of igniting gas explosions with electric sparks, small multiplexers (1 mm2) and high-speed readout. We use photonic microring resonators in SOI technology as accurate sensors that can be integrated with MEMS. In this paper, we present a characterization of the relation between an applied strain and the shift in the optical resonance wavelengths of such resonators. This characterization includes the influence of the width of the waveguide and of the orientation of the silicon crystal. © 2013 IEEE

First light and results on EBL2

Recently TNO has established EBL2; an exposure and analysis facility for testing EUV optics, reticles and pellicles under relevant EUV scanner and source conditions. The facility and EUV source complies with the ASML power roadmap of EUV systems up to a power of 500 W IF. This enables life time testing of EUV optics, reticles and pellicles under conditions which are not yet available to industry, helping the industry in preparing for HVM production. The EBL2 facility consists of a EUV source, collector optics, exposure chamber, XPS chamber, and automated sample handling. The exposure chamber has capabilities for plasma analysis, imaging ellipsometry for in-situ analysis of the sample under radiation, photodiodes for power measurements and a scintillator disk for spot profiles. It is possible to insert spectral purity filters and apertures in the beam line for wavelength tuning and beam shaping. The source is Sn fueled DPP source made by our partner Ushio and is based on the proven technology from the ASML AD-tools, providing a similar spectrum and pulse shape as used in the ASML NXE scanners. We show the results of first light obtained in December 2016. The XPS is capable of handling and analyzing full reticles and data on the obtained surface sensitivity and imaging quality will be shown

Characterization of EBL2 EUV exposure facility

TNO has built EBL2; a facility for EUV exposure testing and surface analysis. EBL2 is capable of testing EUV optics, EUV photomasks, pellicles, and other components under controlled conditions, relevant to EUV scanner and source operation at all foreseen source power nodes. The system consists of an EUV beam line coupled to an X-ray Photoelectron Spectroscopy system by an automated sample handler. The current contribution reports on the results of the qualification testing of the EUV beam line. Topics investigated include handling and position control, thermal management, a relevant gas environment, EUV irradiation and metrology, and first EUV exposures

First light on EBL2

TNO is building EBL2 as a publicly accessible test facility for EUV lithography related development of photomasks, pellicles, optics, and other components requiring EUV exposure. EBL2 consists of a EUV Beam Line, a XPS system, and sample handling infrastructure. Recently we finished installation of the source, exposure chamber, handlers and XPS system. This paper describes the integration process and first light of the EUV source. EBL2 accepts a wide range of sample sizes, including EUV masks with or without pellicles. All types of samples will be loaded using a standard dual pod interface. EUV masks returned from EBL2 will retain their NXE compatibility to facilitate wafer printing on scanners after exposure in EBL2. The Beam Line provides high intensity EUV irradiation from a Sn-fueled EUV source from Ushio. EUV intensity, spectrum, and repetition rate are all adjustable. The XPS system is now operational and accepts samples up to reticle size