Validation of magnetophonon spectroscopy as a tool for analyzing hot-electron effects in devices

It is shown that very high precision hot-electron magnetophonon experiments made on n+n−n+-GaAs sandwich device structures which are customized for magnetoresistance measurements can be very accurately modeled by a new Monte Carlo technique. The latter takes account of the Landau quantization and device architecture as well as material parameters. It is proposed that this combination of experiment and modeling yields a quantitative tool for the direct analysis of spatially localized very nonequilibrium electron distributions in small devices and low dimensional structures