Epitaxial graphene growth on 3C-SiC/Si(111): Towards semiconducting graphene

This project is a step forward in developing advanced two dimensional carbon-based materials for future nanoelectronics applications. It explores a new pathway towards nanoscale graphene fabrication compatible with the current semiconductor industry. Ribbons of graphene have been fabricated on silicon carbide wafers by nanoscale patterning as a first step towards developing graphene circuitry. A technology to decrease the interaction between the substrate and graphene has been developed to improve graphene flatness. The attenuation of electrons from the graphene layer have been also investigated, leading to a new insight in understanding electrons attenuation length

MoS2/Epitaxial graphene layered electrodes for solid-state supercapacitors

The potential of transition metal dichalcogenides such as MoS2 for energy storage has been significantly limited so far by the lack of conductivity and structural stability. Employing highly conductive, graphitic materials in combination with transition metal dichalcogenides can address this gap. Here, we explore the use of a layered electrode structure for solid-state supercapacitors, made of MoS2 and epitaxial graphene (EG) on cubic silicon carbide for on-silicon energy storage. We show that the energy storage of the solid-state supercapacitors can be significantly increased by creating layered MoS2/graphene electrodes, yielding a substantial improvement as compared to electrodes using either EG or MoS2 alone. We conclude that the conductivity of EG and the growth morphology of MoS2 on graphene play an enabling role in the successful use of transition metal dichalcogenides for on-chip energy storage.</p