2 research outputs found
Structural state scale-dependent physical characteristics and endurance of cermet composite for cutting metal
A structural-phase state developed on the surface of a TiC/Ni-Cr-Al cermet alloy under superfast heating and cooling produced by pulse electron beam melting has been presented. The effect of the surface's structural state multimodality on the temperature dependencies of thefriction and endurance of the cermet tool in cutting metal has been investigated. The high-energy flux treatment of subsurface layers by electron beam pulses in argon-containing gas discharge plasma serves to improve the endurance of metal cutting tools manifold (by a factor of 6), to reduce the friction via precipitation of secondary 200 nm carbides in binder interlayers. It is possible to improve the cermet tool endurance for cutting metal by a factor of 10-12 by irradiating the cermet in a reactive nitrogen-containing atmosphere with the ensuingprecipitation of nanosize 50 nm AlN particles in the binder interlayers
Π€ΠΎΡΠΎ- ΠΈ ΡΠ»Π΅ΠΊΡΡΠΎΠ»ΡΠΌΠΈΠ½Π΅ΡΡΠ΅Π½ΡΠΈΡ ΡΡΡΡΠΊΡΡΡ ΠΎΠΊΡΠΈΠ΄-Π½ΠΈΡΡΠΈΠ΄-ΠΎΠΊΡΠΈΠ΄-ΠΊΡΠ΅ΠΌΠ½ΠΈΠΉ Π΄Π»Ρ ΠΏΡΠΈΠΌΠ΅Π½Π΅Π½ΠΈΡ Π² ΠΊΡΠ΅ΠΌΠ½ΠΈΠ΅Π²ΠΎΠΉ ΠΎΠΏΡΠΎΡΠ»Π΅ΠΊΡΡΠΎΠ½ΠΈΠΊΠ΅
Oxide-nitride-oxide-silicon (SiO2/SiN0.9/SiO2/Si) structures have been fabricated by chemical vapor deposition. The elemental composition and light emission properties of βSiO2/SiN0.9/SiO2/Siβ structures have been studied using Rutherford backscattering spectroscopy (RBS), photo- and electroluminescence (Pl, El). The RBS measurements has shown the presence of an intermediate silicon oxynitride layers at the SiO2βSiN0.9 interfaces.It has been shown that the photoluminescence of the SiO2/SiN0.9/SiO2/Si structure is due to the emission of a SiN0.9 layer, and the electroluminescence is attributed to the emission of silicon oxide and oxynitride layers. A broad intense band with a maximum at 1.9 eV dominates the Pl spectrum. This band attributed to the radiative recombination of excited carriers between the band tail states of the SiN0.9 layer. The origin of the less intense Pl band at 2.8 eV is associated with the presence Β of nitrogen defects in the silicon nitride.El was excited in the electrolyte-dielectric-semiconductor system. The electric field strength in the SiO2 layers reached 7β8 MV/cm and exceeded this parameter in nitride layer nearly four times. The electrons accelerating in electric field of 7β8 MV/cm could heat up to energies more than 5 eV. It is sufficient for the excitation of luminescence centres in the silicon oxide and oxynitride layers. The SiO2/SiN0.9/SiO2/Si composition El bands with quantum energies of 1.9 and 2.3 eV are related to the presence of silanol groups (SiβOH) and three-coordinated silicon atoms (β‘Siβ’) in the silicon oxide layers. The El band with an energy of 2.7 eV is attributed to the radiative relaxation of silylene (O2=Si:) centers in the silicon oxynitride regions. It is observed the least reduction of this band intensity under the influence of strong electric fields after a charge flow Β of 1β3 C/cm2.Π‘ΡΡΡΠΊΡΡΡΡ SiO2/SiN0,9/SiO2/Si Ρ ΡΡΠΌΠΌΠ°ΡΠ½ΠΎΠΉ ΡΠΎΠ»ΡΠΈΠ½ΠΎΠΉ Π΄ΠΈΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΈΡ
ΡΠ»ΠΎΠ΅Π² 140 Π½ΠΌ ΠΈΠ·Π³ΠΎΡΠΎΠ²Π»Π΅Π½Ρ ΠΌΠ΅ΡΠΎΠ΄ΠΎΠΌ Ρ
ΠΈΠΌΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΠΎΡΠ°ΠΆΠ΄Π΅Π½ΠΈΡ ΠΈΠ· Π³Π°Π·ΠΎΠ²ΠΎΠΉ ΡΠ°Π·Ρ. ΠΠ»Π΅ΠΌΠ΅Π½ΡΠ½ΡΠΉ ΡΠΎΡΡΠ°Π² ΠΈ ΠΈΠ·Π»ΡΡΠ°ΡΠ΅Π»ΡΠ½ΡΠ΅ ΡΠ²ΠΎΠΉΡΡΠ²Π° ΠΏΠΎΠ»ΡΡΠ΅Π½Π½ΡΡ
ΡΡΡΡΠΊΡΡΡ ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π»ΠΈΡΡ ΠΌΠ΅ΡΠΎΠ΄Π°ΠΌΠΈ ΡΠ΅Π·Π΅ΡΡΠΎΡΠ΄ΠΎΠ²ΡΠΊΠΎΠ³ΠΎ ΠΎΠ±ΡΠ°ΡΠ½ΠΎΠ³ΠΎ ΡΠ°ΡΡΠ΅ΡΠ½ΠΈΡ (POP), ΡΠΎΡΠΎ- ΠΈ ΡΠ»Π΅ΠΊΡΡΠΎΠ»ΡΠΌΠΈΠ½Π΅ΡΡΠ΅Π½ΡΠΈΠΈ (Π€Π, ΠΠ). ΠΠ΅ΡΠΎΠ΄ΠΎΠΌ POP ΡΡΡΠ°Π½ΠΎΠ²Π»Π΅Π½ΠΎ Π½Π°Π»ΠΈΡΠΈΠ΅ ΠΎΠ±Π»Π°ΡΡΠ΅ΠΉ ΠΎΠΊΡΠΈΠ½ΠΈΡΡΠΈΠ΄Π° ΠΊΡΠ΅ΠΌΠ½ΠΈΡ Π½Π° Π³ΡΠ°Π½ΠΈΡΠ°Ρ
Π½ΠΈΡΡΠΈΠ΄Π½ΠΎΠ³ΠΎ ΠΈ ΠΎΠΊΡΠΈΠ΄Π½ΡΡ
ΡΠ»ΠΎΠ΅Π².ΠΠΎΠΊΠ°Π·Π°Π½ΠΎ, ΡΡΠΎ ΡΠΎΡΠΎΠ»ΡΠΌΠΈΠ½Π΅ΡΡΠ΅Π½ΡΠΈΡ ΠΎΠ±ΡΠ°Π·ΡΠ° ΠΎΠ±ΡΡΠ»ΠΎΠ²Π»Π΅Π½Π° ΡΠ²Π΅ΡΠ΅Π½ΠΈΠ΅ΠΌ ΠΎΠ±ΠΎΠ³Π°ΡΠ΅Π½Π½ΠΎΠ³ΠΎ ΠΊΡΠ΅ΠΌΠ½ΠΈΠ΅ΠΌ ΡΠ»ΠΎΡ SiN0,9, ΡΠΎΠ³Π΄Π° ΠΊΠ°ΠΊ ΡΠ»Π΅ΠΊΡΡΠΎΠ»ΡΠΌΠΈΠ½Π΅ΡΡΠ΅Π½ΡΠΈΡ β ΡΠ²Π΅ΡΠ΅Π½ΠΈΠ΅ΠΌ ΡΠ»ΠΎΠ΅Π² ΠΎΠΊΡΠΈΠ΄Π° ΠΈ ΠΎΠΊΡΠΈΠ½ΠΈΡΡΠΈΠ΄Π° ΠΊΡΠ΅ΠΌΠ½ΠΈΡ. ΠΠΎΠ·Π±ΡΠΆΠ΄Π°Π΅ΠΌΠ°Ρ HeβCd Π»Π°Π·Π΅ΡΠΎΠΌ (EΠ²ΠΎΠ·Π± = 3,82 ΡΠ) ΡΠΎΡΠΎΠ»ΡΠΌΠΈΠ½Π΅ΡΡΠ΅Π½ΡΠΈΡ ΡΡΡΡΠΊΡΡΡΡ Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΠ·ΡΠ΅ΡΡΡ ΡΠΈΡΠΎΠΊΠΎΠΉ ΠΈΠ½ΡΠ΅Π½ΡΠΈΠ²Π½ΠΎΠΉ ΠΏΠΎΠ»ΠΎΡΠΎΠΉ Ρ ΠΌΠ°ΠΊΡΠΈΠΌΡΠΌΠΎΠΌ ΠΏΡΠΈ 1,9 ΡΠ, ΡΠ²ΡΠ·Π°Π½Π½ΠΎΠΉ Ρ ΠΈΠ·Π»ΡΡΠ°ΡΠ΅Π»ΡΠ½ΠΎΠΉ ΡΠ΅ΠΊΠΎΠΌΠ±ΠΈΠ½Π°ΡΠΈΠ΅ΠΉ Π½ΠΎΡΠΈΡΠ΅Π»Π΅ΠΉ Π·Π°ΡΡΠ΄Π°, Π»ΠΎΠΊΠ°Π»ΠΈΠ·ΠΎΠ²Π°Π½Π½ΡΡ
Π² Ρ
Π²ΠΎΡΡΠ°Ρ
ΡΠ°Π·ΡΠ΅ΡΠ΅Π½Π½ΡΡ
Π·ΠΎΠ½ Π½ΠΈΡΡΠΈΠ΄Π° ΠΊΡΠ΅ΠΌΠ½ΠΈΡ. ΠΡΠΎΠΈΡΡ
ΠΎΠΆΠ΄Π΅Π½ΠΈΠ΅ ΠΌΠ΅Π½Π΅Π΅ ΠΈΠ½ΡΠ΅Π½ΡΠΈΠ²Π½ΠΎΠΉ ΠΏΠΎΠ»ΠΎΡΡ ΠΏΡΠΈ 2,8 ΡΠ Π² ΡΠΏΠ΅ΠΊΡΡΠ΅ Π€Π ΠΎΠ±ΡΡΠ»ΠΎΠ²Π»Π΅Π½ΠΎ Π½Π°Π»ΠΈΡΠΈΠ΅ΠΌ ΡΠΎΠ±ΡΡΠ²Π΅Π½Π½ΡΡ
Π΄Π΅ΡΠ΅ΠΊΡΠΎΠ² (N-ΡΠ΅Π½ΡΡΠΎΠ²) Π² ΡΠ»ΠΎΠ΅ SiN0,9.ΠΠ Π²ΠΎΠ·Π±ΡΠΆΠ΄Π°Π»Π°ΡΡ Π² Π³Π°Π»ΡΠ²Π°Π½ΠΎΡΡΠ°ΡΠΈΡΠ΅ΡΠΊΠΎΠΌ ΡΠ΅ΠΆΠΈΠΌΠ΅ Π² ΡΠΈΡΡΠ΅ΠΌΠ΅ ΡΠ»Π΅ΠΊΡΡΠΎΠ»ΠΈΡβΠ΄ΠΈΡΠ»Π΅ΠΊΡΡΠΈΠΊβΠΏΠΎΠ»ΡΠΏΡΠΎΠ²ΠΎΠ΄Π½ΠΈΠΊ (ΠΠΠ) ΠΏΡΠΈ ΡΡΠ΅Π΄Π½Π΅ΠΉ Π²Π΅Π»ΠΈΡΠΈΠ½Π΅ Π½Π°ΠΏΡΡΠΆΠ΅Π½Π½ΠΎΡΡΠΈ ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΠΏΠΎΠ»Ρ Π² ΡΡΡΡΠΊΡΡΡΠ΅ 5β6 ΠΠ/ΡΠΌ. ΠΠ΅Π»ΠΈΡΠΈΠ½Π° Π½Π°ΠΏΡΡΠΆΠ΅Π½Π½ΠΎΡΡΠΈ ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΠΏΠΎΠ»Ρ Π² ΡΠ»ΠΎΡΡ
ΠΎΠΊΡΠΈΠ΄Π° ΠΊΡΠ΅ΠΌΠ½ΠΈΡ ΡΠΎΡΡΠ°Π²Π»ΡΠ»Π° 7β8 ΠΠ/ΡΠΌ ΠΈ ΠΏΡΠ΅Π²ΡΡΠ°Π»Π° Π·Π½Π°ΡΠ΅Π½ΠΈΠ΅ ΡΡΠΎΠ³ΠΎ ΠΏΠ°ΡΠ°ΠΌΠ΅ΡΡΠ° Π² ΡΠ»ΠΎΠ΅ SiN0,9 Π² ~4 ΡΠ°Π·Π°. ΠΠ»Π΅ΠΊΡΡΠΎΠ½Ρ, ΡΡΠΊΠΎΡΠ΅Π½Π½ΡΠ΅ Π² ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΈΡ
ΠΏΠΎΠ»ΡΡ
7β8 MB/ΡΠΌ, ΠΌΠΎΠ³ΡΡ ΡΠ°Π·ΠΎΠ³ΡΠ΅Π²Π°ΡΡΡΡ Π΄ΠΎ ΡΠ½Π΅ΡΠ³ΠΈΠΈ Π±ΠΎΠ»Π΅Π΅ 5 ΡΠ, Π΄ΠΎΡΡΠ°ΡΠΎΡΠ½ΠΎΠΉ Π΄Π»Ρ Π²ΠΎΠ·Π±ΡΠΆΠ΄Π΅Π½ΠΈΡ ΡΠ΅Π½ΡΡΠΎΠ² Π»ΡΠΌΠΈΠ½Π΅ΡΡΠ΅Π½ΡΠΈΠΈ Π² ΡΠ»ΠΎΡΡ
ΠΎΠΊΡΠΈΠ΄Π° ΠΈ ΠΎΠΊΡΠΈΠ½ΠΈΡΡΠΈΠ΄Π° ΠΊΡΠ΅ΠΌΠ½ΠΈΡ. ΠΠ»Ρ ΠΈΠ·ΡΡΠ΅Π½Π½ΠΎΠΉ ΠΊΠΎΠΌΠΏΠΎΠ·ΠΈΡΠΈΠΈ Sio2/SiN0,9/SiO2/Si ΠΏΠΎΠ»ΠΎΡΡ ΠΠ Ρ ΡΠ½Π΅ΡΠ³ΠΈΡΠΌΠΈ 1,9 ΠΈ 2,3 ΡΠ ΡΠ²ΡΠ·Π°Π½Ρ Ρ Π½Π°Π»ΠΈΡΠΈΠ΅ΠΌ Π² ΡΠ»ΠΎΡΡ
ΠΎΠΊΡΠΈΠ΄Π° ΠΊΡΠ΅ΠΌΠ½ΠΈΡ ΡΠΈΠ»Π°Π½ΠΎΠ»ΡΠ½ΡΡ
Π³ΡΡΠΏΠΏ (SiβOH) ΠΈ ΡΡΠ΅Ρ
ΠΊΠΎΠΎΡΠ΄ΠΈΠ½ΠΈΡΠΎΠ²Π°Π½Π½ΡΡ
Π°ΡΠΎΠΌΠΎΠ² ΠΊΡΠ΅ΠΌΠ½ΠΈΡ (Π3β‘Siβ’). ΠΠΎΠ»ΠΎΡΠ° Ρ ΡΠ½Π΅ΡΠ³ΠΈΠ΅ΠΉ 2,7 ΡΠ ΠΏΡΠΈΠΏΠΈΡΠ°Π½Π° ΠΈΠ·Π»ΡΡΠ°ΡΠ΅Π»ΡΠ½ΠΎΠΉ ΡΠ΅Π»Π°ΠΊΡΠ°ΡΠΈΠΈ Π΄Π²ΡΡ
ΠΊΠΎΠΎΡΠ΄ΠΈΠ½ΠΈΡΠΎΠ²Π°Π½Π½ΡΡ
Π°ΡΠΎΠΌΠΎΠ² ΠΊΡΠ΅ΠΌΠ½ΠΈΡ (O2=Si:) Π² ΠΏΠ΅ΡΠ΅Ρ
ΠΎΠ΄Π½ΡΡ
ΠΎΠ±Π»Π°ΡΡΡΡ
ΠΎΠΊΡΠΈΠ½ΠΈΡΡΠΈΠ΄Π° ΠΊΡΠ΅ΠΌΠ½ΠΈΡ. ΠΠ½ΡΠ΅Π½ΡΠΈΠ²Π½ΠΎΡΡΡ ΡΠ²Π΅ΡΠ΅Π½ΠΈΡ ΡΡΠΎΠΉ ΠΏΠΎΠ»ΠΎΡΡ ΠΎΠ±Π»Π°Π΄Π°Π΅Ρ Π½Π°ΠΈΠ±ΠΎΠ»ΡΡΠ΅ΠΉ ΡΡΡΠΎΠΉΡΠΈΠ²ΠΎΡΡΡΡ ΠΊ Π²ΠΎΠ·Π΄Π΅ΠΉΡΡΠ²ΠΈΡ ΡΠΈΠ»ΡΠ½ΡΡ
ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΈΡ
ΠΏΠΎΠ»Π΅ΠΉ ΠΏΠΎΡΠ»Π΅ ΠΏΡΠΎΡΠ΅ΠΊΠ°Π½ΠΈΡ ΡΠ΅ΡΠ΅Π· ΠΎΠ±ΡΠ°Π·Π΅Ρ Π·Π°ΡΡΠ΄Π° 1β3 ΠΠ»/ΡΠΌ2