Enhanced Performance of Electrospun PVP:PC71BM Nanofiber for Organic Solar Cells

The effect of electrospinning parameters on the morphology and efficiency of non-conjugated polar polymers PC 71 BM was systematically investigated by varying the applied voltage, needle tip-to-collector distance and flow rate respectively. The best PVP:PC 71 BM nanofiber efficiency is at applied voltage of 15kV which is about 8.75% followed by 1.0mL/hr flow rate and 10cm needle to collector distance with PCE=7.40% and 6.86% respectively. The device with applied voltage of 15kV exhibits enhanced short circuit current and fill factor by 17.60 mA cm -2 and 69.8% respectively with uniform and consistently aligned fabricated nanofiber. This is due to the extremely organized PVP:PC 71 BM nanofiber molecular structure that offers tightly arranged molecular chain structure and excellent chemical resistance which offers improves electron mobility and long term reliability of the device. This provides better controllability of the organic solar cell (OSC) nanofiber characteristics towards better power conversion efficiency, improved reliability and lifetime encapsulation

High Performance Vertically Aligned Electrospun PVP:PC71BM Nanofiber for Organic Solar Cells

This paper is directed towards investigating the characteristic of poly(4-vinylpyrirolidone) (PVPy):[6,6]-phenyl C71 butyric acid methyl ester (PC 71 BM) solar cell for both structural and electrical characteristic by varying the effect of polymer solution concentration and drum rotation speed towards improving the efficiency of Organic solar cell (OSC). PVP:PC 71 BM solar cell with polymer solution concentration of 4wt% and 200rpm drum rotation speed exhibit highest Power Conversion Efficiency (PCE) at 7.8% and 7.5% respectively, a Jsc ranging from 17.28 to 16.90 mA cm -2 and FF value from 63.0 to 62.8% respectively. The added benefit of high absorption properties of PC 71 BM and incorporation of PVP in reducing work function and interfacial resistance further improve the efficiency of OSCs device. This is where PVP:PC 71 BM nanofiber become relevant to the photovoltaic market which lowered production cost with better efficiency without hindering their transparent and flexibility properties for future building integrated photovoltaic application

Vertical Strained Impact Ionization MOSFET (VESIMOS) Technology Approach for Based Biosensor Applications using its Behavioral Model

This paper gives an overview about uniqueness characteristics of Vertical Strained Impact Ionization MOSFET (VESIMOS) technology act as bio-sensing devices. There are three proposed devices used VESIMOS technology which are Single Channel VESIMOS (SC-VESIMOS), Dual Channel (DC-VESIMOS), VESIMOS Incorporating Dielectric Pocket (VESIMOS-DP) are probably can become feasible candidates as biosensor devices. The selected devices from three structures was further analyzed for its behavioral model. The extracted parameter from the device simulations was used to design the circuitry model to represent the characteristic and behavior of the selected devices in circuit implementation. The best characteristic of the device shown by DC-VESIMOS and selected for further analysis. The behavioral model or equivalent circuit model of DC-VESIMOS used PSPICE circuit simulator. Main prerequisite of biosensor device are high sensitivity, faster response, and high reliability which represented by the VESIMOS structures. Low subthreshold swings present the sensitivity of the devices shown by DC-VESIMOS are 11.48 mV/dec and 10.53 mV/dec from TCAD and PSPICE results respectively

Enhanced performance analysis of vertical strained-sige impact ionization MOSFET (VESIMOS)

The Vertical Strained Silicon Germanium (SiGe) Impact Ionization MOSFET (VESIMOS) has been successfully developed and analyzed in this paper. VESIMOS device integrates vertical structure concept of Impact Ionization MOSFET (IMOS) and strained technology. The transfer characteristics of VESIMOS revealed an inverse proportionality of supply voltage, VD and sub-threshold, S due to lower breakdown strength of Ge content. However, the Sis in direct proportion to the leakage current. The S=10mV/dec was successfully obtained at threshold voltage, VT=0.9V, with VD=1.75V. This VT is 40% lower than VT for Si-vertical IMOS. The output characteristics goes into saturation for VD more than 2.5V, attributed to the presence of Ge that has high and symmetric impact ionization rates. Electron mobility wasimproved by 40% compared to Si-vertical IMOS and an increase in strain will also increase mobility and reduce further the VT. However, the increase in strain layer thickness, TSiGe, resulted in an increase of VT and lowered the mobility. This is due to the strain relaxation in the SiGe layer. Finally, at high source-drain doping concentration, S/D=2×1018/cm3, the VT dropped to 0.88V, with VD of 1.75V. This is due to high electric field effect in the channel at high doping concentration, which is contrary to the doping effects of conventional MOSFET