Lateral coherence properties of broad-area semiconductor quantum well lasers

The lateral coherence of broad-area lasers fabricated from a GaAs/GaAlAs graded index waveguide separate confinement and single quantum well heterostructure grown by molecular-beam epitaxy was investigated. These lasers exhibit a high degree of coherence along the junction plane, thus producing a stable and very narrow far field intensity distribution

Modal properties of unstable resonator semiconductor lasers with a lateral waveguide

The modal properties of unstable resonator lasers with a lateral waveguide have been analyzed, and an unstable resonator semiconductor laser with a real index lateral waveguide has been demonstrated. Output powers in excess of 400 mW were observed with a stable, highly coherent lateral field distribution. The incorporation of a lateral real index waveguide with the unstable resonator configuration results in an increase in the external quantum efficiency and the appearance of ripples in the lateral field distribution

Broadband Tuning (170nm) of InGaAs Quantum Well Lasers

The wavelength tuning properties of strained InGaAs quantum well lasers using an external grating for feedback is reported. Tunable laser oscillation has been observed over a range of 170 nm, between 840 and 1010 nm, under pulsed current excitation. The optimal conditions for broadband tunability for the InGaAs lasers are different from GaAs lasers, which is attributed to a difference in spectral gain curves. Together with an optimised GaAs quantum well laser the entire region between 740 and 1010 nm is spanned

Unstable resonator cavity semiconductor lasers

GaAs heterostructure lasers with unstable resonator cavities were demonstrated for the first time with both curved mirrors fabricated by etching. Typical output powers of 0.35 W were observed in a stable, highly coherent lateral mode. The laser operated stably in a single longitudinal mode over a large range of injection currents. The external quantum efficiency was 70% of that of a similar laser with both mirror facets cleaved implying good output coupling of the energy from the entire region

Optimised Fabry-Perot (AlGa)As quantum well lasers tunable over 105 nm

Uncoated, Fabry-Perot (AlGa)As semiconductor lasers are tuned over 105nm in a grating-coupled external cavity. Broadband tunability is achieved by optimising the resonator loss so as to invoke lasing from both the first and second quantised states of the single quantum well active region

Spectral and dynamic characteristics of buried-heterostructure single quantum well (Al,Ga)As lasers

We demonstrate that, as predicted, (Al,Ga)As single quantum well (SQW) lasers have substantially narrower spectral linewidths than bulk double-heterostructure lasers. We have observed a further major reduction (>3×) in the linewidth of these SQW lasers when the facet reflectivities are enhanced. This observation is explained theoretically on the basis of the very low losses in coated SQW lasers and the value of the spontaneous emission factor at low threshold currents. We also report on the modulation frequency response parameter of these SQW lasers

Ultrabroadband tunable external-cavity quantum well lasers

The spectral tunability of properly designed quantum well lasers is demonstrated to equal the range of dye lasers. Theoretical and measured gain spectra are presented to support this statement, and stepwise wavelength tuning over a 125 nm span in GaAs/AlGaAs lasers and 175 nm in InGaAs/AlGaAs lasers are shown

A dynamical model of oncotripsy by mechanical cell fatigue: selective cancer cell ablation by low-intensity pulsed ultrasound

The method of oncotripsy, first proposed in Heyden & Ortiz (Heyden & Ortiz 2016 J. Mech. Phys. Solids 92, 164–175 (doi:10.1016/j.jmps.2016.04.016)), exploits aberrations in the material properties and morphology of cancerous cells in order to ablate them selectively by means of tuned low-intensity pulsed ultrasound. We propose the dynamical model of oncotripsy that follows as an application of cell dynamics, statistical mechanical theory of network elasticity and ‘birth–death’ kinetics to describe the processes of damage and repair of the cytoskeleton. We also develop a reduced dynamical model that approximates the three-dimensional dynamics of the cell and facilitates parametric studies, including sensitivity analysis and process optimization. We show that the dynamical model predicts—and provides a conceptual basis for understanding—the oncotripsy effect and other trends in the data of Mittelstein et al. (Mittelstein et al. 2019 Appl. Phys. Lett. 116, 013701 (doi:10.1063/1.5128627)), for cells in suspension, including the dependence of cell-death curves on cell and process parameters