A TCAD Simulation Study for a New Technique to Calculate Carrier Recombination Lifetime Based on Open Circuit Voltage Decay Method

A new technique for calculation of correct carrier recombination lifetime in intrinsic layer of silicon PiN diode on the basis of the Open Circuit Voltage Decay method was invented. The new technique can remove the effects of carrier diffusion into p+ and n+ layer from intrinsic layer and carrier injection into intrinsic layer from depletion layer. The comparison of calculation results between the conventional and new technique by employing TCAD simulation indicated that the new technique can calculate more correct recombination lifetime value.8th International Symposium on Advanced Science and Technology of Silicon Materials, November 7 - 9, 2022, Okayama, Japan (2020年11月15日～19日開催予定から変更