3 research outputs found
Magnetoresistance and spin polarization in the insulating regime of a Si two-dimensional electron system
We have studied the magnetoresistance in a high-mobility Si inversion layer
down to low electron concentrations at which the longitudinal resistivity
has an activated temperature dependence. The angle of the magnetic
field was controlled so as to study the orbital effect proportional to the
perpendicular component for various total strengths . A
dip in , which corresponds to the Landau level filling factor of
, survives even for high resistivity of at
. The linear -dependence of the value of
at the dip for low indicates that a ferromagnetic
instability does not occur even in the far insulating regime.Comment: 6 pages, 7 figures, submitted to PR