Properties of Co Evaporated RbInSe2 Thin Films

The formation of an Rb containing In Se compound at the surface of Cu In, Ga Se2 CIGS thin films is assumed to be part of the mechanism of RbF post deposition treatments PDTs performed on these absorber layers. Alkali PDTs have acquired attention lately as they significantly enhance the efficiency of CIGS solar cells. In this contribution the formation of various phases during the RbF PDT has been investigated. The results indicate that RbInSe2 is the most probable phase to form. Combining theoretical and experimental investigations, fundamental properties of a thermally co evaporated RbInSe2 thin film are reported in order to serve as reference values in further studie