93 research outputs found

    Fabrication of Large-Grain Thick Polycrystalline Silicon Thin Films via Aluminum-Induced Crystallization for Application in Solar Cells

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    The fabrication of large-grain 1.25 μm thick polycrystalline silicon (poly-Si) films via two-stage aluminum-induced crystallization (AIC) for application in thin-film solar cells is reported. The induced 250 nm thick poly-Si film in the first stage is used as the seed layer for the crystallization of a 1 μm thick amorphous silicon (a-Si) film in the second stage. The annealing temperatures in the two stages are both 500°C. The effect of annealing time (15, 30, 60, and 120 minutes) in the second stage on the crystallization of a-Si film is investigated using X-ray diffraction (XRD), scanning electron microscopy, and Raman spectroscopy. XRD and Raman results confirm that the induced poly-Si films are induced by the proposed process

    Effect of O 2

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    Cathodic vacuum arc deposition (CVAD) can obtain a good quality thin film with a low growth temperature and a high deposition rate, thus matching the requirement of film deposition on flexible electronics. This paper reported the room-temperature deposition of zinc oxide (ZnO) thin films deposited by CVAD on polyethylene terephthalate (PET) substrate. Microstructure, optical, and electrical measurements of the deposited ZnO thin films were investigated with various O2/Ar gas flow ratios from 6 : 1 to 10 : 1. The films showed hexagonal wurtzite crystal structure. With increasing the O2/Ar gas flow ratios, the c-axis (002) oriented intensity decreased. The crystal sizes were around 16.03 nm to 23.42 nm. The average transmittance values in the visible range of all deposited ZnO films were higher than 83% and the calculated band gaps from the absorption data were found to be around 3.1 to 3.2 eV. The resistivity had a minimum value in the 3.65 × 10−3 Ω·cm under the O2/Ar gas flow ratio of 8 : 1. The luminescence mechanisms of the deposited film were also investigated to understand the defect types of room-temperature grown ZnO films

    Real-time Monitoring for the Next Core-Collapse Supernova in JUNO

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    Core-collapse supernova (CCSN) is one of the most energetic astrophysical events in the Universe. The early and prompt detection of neutrinos before (pre-SN) and during the SN burst is a unique opportunity to realize the multi-messenger observation of the CCSN events. In this work, we describe the monitoring concept and present the sensitivity of the system to the pre-SN and SN neutrinos at the Jiangmen Underground Neutrino Observatory (JUNO), which is a 20 kton liquid scintillator detector under construction in South China. The real-time monitoring system is designed with both the prompt monitors on the electronic board and online monitors at the data acquisition stage, in order to ensure both the alert speed and alert coverage of progenitor stars. By assuming a false alert rate of 1 per year, this monitoring system can be sensitive to the pre-SN neutrinos up to the distance of about 1.6 (0.9) kpc and SN neutrinos up to about 370 (360) kpc for a progenitor mass of 30M⊙M_{\odot} for the case of normal (inverted) mass ordering. The pointing ability of the CCSN is evaluated by using the accumulated event anisotropy of the inverse beta decay interactions from pre-SN or SN neutrinos, which, along with the early alert, can play important roles for the followup multi-messenger observations of the next Galactic or nearby extragalactic CCSN.Comment: 24 pages, 9 figure

    Revealing Development Trends in Blockchain-Based 5G Network Technologies through Patent Analysis

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    The fifth-generation (5G) network has special communication and security requirements including high reliability, low latency, precise automatic control, secure covert transmission, and evidence traceability. The 5G network combined with blockchain technology just meets this demand, so it is driving a rapidly growing volume of patent applications. This study proposes application scenarios, architecture diagrams, and patent analysis methods for blockchain-based 5G network technologies, beginning with a network architecture using mobile edge computing (MEC) and blockchain as independent platform components to solve MEC load pressure. In the patent analysis, a patent cluster map of blockchain-based 5G networks is proposed to analyze the intersection of technical application fields. The bottleneck period of technological development is presented for leading countries and enterprises in the technological development of blockchain-based 5G network, highlighting relative advantages and disadvantages. Specifically, to extract the core international patent classification (IPC) key technologies and their mutual interrelatedness, we use network topology analysis to establish an IPC network topology diagram through node global and local topology characteristics, thus revealing hotspots of IPC technology research and the characteristics of the technology relationship system. The findings provide a very useful reference for the formulation of government strategy to assist in the implementation and development of blockchain-based 5G network technologies for future smart cities

    An Improved Stopband Dual-Band Filter Using Quad-Mode Stub-Loaded Resonators

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    In this paper, we present a dual-band microstrip bandpass filter (BPF) with an improved stopband, which was constructed by a quad-mode stub-loaded resonator (SLR). Since the SLR is able to produce multiresonance within a single unit, the area saving is significant. The proposed quad-mode SLR was implemented by two stubs allocated at symmetry places, thus the even-/odd-mode can be applied to analysis the resonance. Moreover, to shift the spurious passband, the step impedance structure was applied to shift the harmonic resonance to the higher frequency. Design procedure for high performance dual-band BPF is proposed, and filter examples were designed for wireless local area network (WLAN) of 2.4/5.2 GHz. The measured insertion losses, return losses and fractional bandwidths (FBW) are 1.43 dB, 10 dB, and 14.8% at 2.4 GHz and 1.34 dB, 10 dB, and 12.9% at 5.2 GHz. Moreover, by applying two quarter-wavelength stubs on the input/output ports, the passband selectivity with an isolation of 40 dB can be achieved. The simulation and measurement have a close match, verifying the design concept

    Enhanced Photoluminescent Properties and Crystalline Morphology of LiBaPO4:Tm3+ Phosphor through Microwave Sintering Method

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    An investigation of the photoluminescent properties and crystalline morphology of blue emitting LiBa1−xPO4:xTm3+ phosphors with various concentrations (x = 0.005–0.030) of Tm3+ ions were synthesized by microwave sintering. For comparison, the LiBa1−xPO4:xTm3+ powders sintered at the same sintering condition but in a conventional furnace were also investigated. LiBaPO4 without second phase was formed no matter which furnace was used. More uniform grain size distributions are obtained by microwave sintering. When the concentration of Tm3+ ion was x = 0.015, the luminescence intensity reached a maximum value, and then decreased with the increases of the Tm3+ concentration due to concentration quenching effect. The microwave sintering significantly enhanced the emission intensity of LiBa1−xPO4:xTm3+ phosphors. Additionally, the d-d interaction is the key mechanism of concentration quenching for LiBaPO4:Tm3+. The chromaticity (x, y) for all LiBa1−xPO4:xTm3+ phosphors are located at (0.16, 0.05), which will be classified as a blue region

    Optimization of the Cathode Arc Plasma Deposition Processing Parameters of ZnO Film Using the Grey-Relational Taguchi Method

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    We deposited undoped ZnO films on the glass substrate at a low temperature (<70°C) using cathode arc plasma deposition (CAPD) and the grey-relational Taguchi method was used to determine the processing parameters of ZnO thin films. The Taguchi method with an L9 orthogonal array, signal-to-noise (S/N) ratio, and analysis of variance (ANOVA) is employed to investigate the performances in the deposition operations. The effect and optimization of deposition parameters, comprising the Ar : O2 gas flow ratio of 1 : 6, 1 : 8, and 1 : 10, the arc current of 50 A, 60 A, and 70 A, and the deposition time of 5 min, 10 min, and 15 min, on the electrical resistivity and optical transmittance of the ZnO films are studied. The results indicate that, by using the grey-relational Taguchi method, the optical transmittance of ZnO thin films increases from 88.17% to 88.82% and the electrical resistivity decreases from 5.12×10-3Ω-cm to 4.38×10-3Ω-cm, respectively

    A Miniaturized Wideband Bandpass Filter Using Quarter-Wavelength Stepped-Impedance Resonators

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    In this paper, we present a simple method to design a miniaturized wideband bandpass filter with suppression of the third harmonic, using only two quarter-wavelength stepped-impedance resonators (SIRs). The resonant modes of the quarter-wavelength SIR, depending on the impedance ratio (K) and electrical length ratio (&alpha;), are discussed first. As to setting the resonant frequency of the SIR for the lower band edge of the required band, the size parameters of two quarter-wavelength SIRs can be determined by selecting the desired impedance ratio (K) and length ratio (&alpha;). By using the opposite directional arrangement of two SIRs with direct taped input/output ports, the wideband response can be formed. A filter example is shown in this study to address this simple design procedure. The measured results of the fabricated filter have a wide passband response from 3.3 to 5.8 GHz, with an insertion loss of 1.5 dB, a return loss of 20 dB, an extended bandwidth ration of 55%, a low-average group delay of less than 0.75 ns, and a stopband from 6 to 12 GHz, with an attenuation level of 20 dB. Due to the similar 0&deg; feeding, a transmission zero at 8.3 GHz appears near the band edge; thus, improving the band selectivity. The proposed filter can have a very simple structure and a miniature size. Simulated results and measured results are in good agreement
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