Design and simulation of a high bandwith optical modulator for IMOS technology based on slot-waveguide with electro optical polymer

Electro-optical modulato,cc are considered to be a key devices for optical interconnects. In order to implement this device in the new InP membrane On Silicon platform (IMOS), a slot—waveguide configuration with a high nonlinear polymer is studied. Simulations and electrical calculations show good peiformance and fabrication tolerance using n-doped InP as the slot-waveguide material. The small dimensions of the structure and the high electro-optical coefficient of the polymer allow devices with a smnallfootprint (hundreds ofp2), high bandwidth (> 100GHz) and low Va x L value (~-~ 0.7Vmmn). This solution is suitable or integration with passive devices already developedfor this platform, and with active devices that are under development

Fabrication technology of a slot waveguide modulator in InP Membranes on Silicon (IMOS)

For the InP Membranes On Silicon (IMOS) platform [1], we developed an electrooptic modulator based on a slot-waveguide with a high nonlinear polymer. A variety of fabrication techniques are used, including electron beam lithography (EBL), optical lithography (OL), dry etching and metallization. The fabrication of such modulator requires a complex fabrication process. In this work we present and discuss the most important fabrication steps

Ultra-sharp and highly tolerant waveguide bends for InP photonic membrane circuits

In this paper we present a sharp bend design for the InP-based photonic membrane, which shows low loss and high tolerance. The traditional arc bends on InP membranes face high loss when the bending radii reduce below 2 µm. And their performance deteriorates even more dramatically at the presence of waveguide footings. The proposed design has advantages of low loss, high compactness, wide spectral response and ease of fabrication. It is also verified to be much more resilient to design and fabrication variations, such as waveguide footings. The sharp bend is fabricated together with traditional arc bends. Experimental results confirm its potential as a basic building block for InP photonic membrane platforms

Photonic integration on an InP-membrane

\u3cp\u3eAdding photonic functions to silicon electronics has become an important research theme in the last decade. Here we present an approach based on heterogeneously integrating an indium phosphide based membrane on silicon. Within this membrane we realized a range of photonic functions with competitive performances: lasers, fast detectors, waveguides, filters, couplers, modulators etc. This contribution describes the technologies and the results.\u3c/p\u3

High confinement InP nanophotonic circuits for optical sensing opportunities

The indium phosphide (InP) photonic integrated circuit (PIC) industry has been offering sensing solutions on a chip, with high precision and low cost. The major application is sensor signal read-out. Its next generation, where the InP PICs are much smaller and faster, enables new sensing opportunities. We review our recent developments in the next-generation InP PIC, and discuss their potential in optical sensing

Indium Phosphide Integrated Photonics in Membranes

Integrating electronic and photonic functions has become a major issue in the last decade. This integration requires small photonic circuits that are compatible with CMOS processing. Here an approach using an indium phosphide based membrane is reviewed. The high index contrast, leading to micron-sized devices, the full set of photonic functions, including lasers, and the possibility to add these membranes to realized CMOS-circuits, make this an attractive option for hybrid integration. In this paper, the concepts and the required technologies are introduced. A range of realized and proposed membrane devices will be presented, and the prospects of this technique will be discussed