2 research outputs found
FUENTES, JOSEFA, HERNÁNDEZ, LOLINA [Material gráfico]
BCopia digital. Madrid : Ministerio de Educación, Cultura y Deporte, 201
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Modeling Low-Dose-Rate Effects in Irradiated Bipolar-Base Oxides
A physical model is developed to quantify the contribution of oxide-trapped charge to enhanced low-dose-rate gain degradation in bipolar junction transistors. Multiple-trapping simulations show that space charge limited transport is partially responsible for low-dose-rate enhancement. At low dose rates, more holes are trapped near the silicon-oxide interface than at high dose rates, resulting in larger midgap voltage shifts at lower dose rates. The additional trapped charge near the interface may cause an exponential increase in excess base current, and a resultant decrease in current gain for some NPN bipolar technologies