Ion Beam Synthesis of InAs Nanocrystals in Crystalline Silicon

The formation of nanodimensional InAs crystallites on Si wafers was studied by the method of high fluence implantation of As and In ions with subsequent high temperature treatment. It was found that the size and depth distributions of the crystallites depend on both the implantation temperature and the annealing conditions. A broad band in an energy range of 0.75–1.1 eV was recorded in the photolumines cence spectra of the samples

A New Nanoporous Material Based on Amorphous Silicon Dioxide

Processes for making nanoporous SiO2 layers on Si via the irradiation of thermally oxidized silicon wafers with fast ions followed by chemical treatment in a solution or vapor of hydrofluoric acid are presented. It is shown that the density, shape, diameter, and length to diameter ratio of channels etched in silicon dioxide can be controlled by varying the regimes of fast ion irradiation or chemical treatment of SiO2/Si structures. Track parameters calculated using the thermal spike model are compared with the chemical etching data

Ion Beam Synthesis of InAs Nanocrystals in Crystalline Silicon

The formation of nanodimensional InAs crystallites on Si wafers was studied by the method of high fluence implantation of As and In ions with subsequent high temperature treatment. It was found that the size and depth distributions of the crystallites depend on both the implantation temperature and the annealing conditions. A broad band in an energy range of 0.75–1.1 eV was recorded in the photolumines cence spectra of the samples

Ion Beam Synthesis of InAs Nanocrystals in Crystalline Silicon

The formation of nanodimensional InAs crystallites on Si wafers was studied by the method of high fluence implantation of As and In ions with subsequent high temperature treatment. It was found that the size and depth distributions of the crystallites depend on both the implantation temperature and the annealing conditions. A broad band in an energy range of 0.75–1.1 eV was recorded in the photolumines cence spectra of the samples

A New Nanoporous Material Based on Amorphous Silicon Dioxide

Processes for making nanoporous SiO2 layers on Si via the irradiation of thermally oxidized silicon wafers with fast ions followed by chemical treatment in a solution or vapor of hydrofluoric acid are presented. It is shown that the density, shape, diameter, and length-to-diameter ratio of channels etched in silicon dioxide can be controlled by varying the regimes of fast ion irradiation or chemical treatment of SiO2/Si structures. Track parameters calculated using the thermal spike model are compared with the chemical etching dat

A New Nanoporous Material Based on Amorphous Silicon Dioxide

Processes for making nanoporous SiO2 layers on Si via the irradiation of thermally oxidized silicon wafers with fast ions followed by chemical treatment in a solution or vapor of hydrofluoric acid are presented. It is shown that the density, shape, diameter, and length-to-diameter ratio of channels etched in silicon dioxide can be controlled by varying the regimes of fast ion irradiation or chemical treatment of SiO2/Si structures. Track parameters calculated using the thermal spike model are compared with the chemical etching dat

Formation of InAs Nanoclusters in Silicon by High-Dose Ion Implantation: Experimental Data and Simulation Results

A physicomathematical model and dedicated software are developed for simulating high-dose implantation of two types of atoms to form InAs nanoclusters in a silicon matrix. The model is based on solving a set of convection–diffusion–reaction equations. The synthesis of InAs nanoclusters produced by high-dose implantation of As+ and In+ ions into crystalline silicon is numerically simulated. Using the methods of transmission electron microscopy and Raman scattering, it is found that InAs nanoclusters are crystalline and have a mean diameter of 7 nm. After As implantation (170 keV, 3.2 × 1016 cm–2) and In implantation (250keV, 2.8 × 1016 cm–2) into silicon at 500°C, the nanoclusters are distributed with a density of 2.8 × 1016 cm–2. From experimental data and theoretical results, the coefficients of radiation-stimulated diffusion of In and As in silicon, as well as the fraction of the implant in the bound state (i.e., entering into InAs nanoclusters), are determined. Experimental data are compared with simulation result

Formation of InAs Nanoclusters in Silicon by High-Dose Ion Implantation: Experimental Data and Simulation Results

A physicomathematical model and dedicated software are developed for simulating high-dose implantation of two types of atoms to form InAs nanoclusters in a silicon matrix. The model is based on solving a set of convection–diffusion–reaction equations. The synthesis of InAs nanoclusters produced by high-dose implantation of As+ and In+ ions into crystalline silicon is numerically simulated. Using the methods of transmission electron microscopy and Raman scattering, it is found that InAs nanoclusters are crystalline and have a mean diameter of 7 nm. After As implantation (170 keV, 3.2 × 1016 cm–2) and In implantation (250keV, 2.8 × 1016 cm–2) into silicon at 500°C, the nanoclusters are distributed with a density of 2.8 × 1016 cm–2. From experimental data and theoretical results, the coefficients of radiation-stimulated diffusion of In and As in silicon, as well as the fraction of the implant in the bound state (i.e., entering into InAs nanoclusters), are determined. Experimental data are compared with simulation result