Editorial: Special Issue on Photocatalytic Nanocomposite Materials (PNMs)

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Photoactive Heterostructures: How They Are Made and Explored

In our review we consider the results on the development and exploration of heterostructured photoactive materials with major attention focused on what are the better ways to form this type of materials and how to explore them correctly. Regardless of what type of heterostructure, metal–semiconductor or semiconductor–semiconductor, is formed, its functionality strongly depends on the quality of heterojunction. In turn, it depends on the selection of the heterostructure components (their chemical and physical properties) and on the proper choice of the synthesis method. Several examples of the different approaches such as in situ and ex situ, bottom‐up and top‐down, are reviewed. At the same time, even if the synthesis of heterostructured photoactive materials seems to be successful, strong experimental physical evidence demonstrating true heterojunction formation are required. A possibility for obtaining such evidence using different physical techniques is discussed. Particularly, it is demonstrated that the ability of optical spectroscopy to study heterostructured materials is in fact very limited. At the same time, such experimental techniques as high‐resolution transmission electron microscopy (HRTEM) and electrophysical methods (work function measurements and impedance spectroscopy) present a true signature of heterojunction formation. Therefore, whatever the purpose of heterostructure formation and studies is, the application of HRTEM and electrophysical methods is necessary to confirm that formation of the heterojunction was successful

Photoactive Heterostructures: How They Are Made and Explored

In our review we consider the results on the development and exploration of heterostructured photoactive materials with major attention focused on what are the better ways to form this type of materials and how to explore them correctly. Regardless of what type of heterostructure, metal–semiconductor or semiconductor–semiconductor, is formed, its functionality strongly depends on the quality of heterojunction. In turn, it depends on the selection of the heterostructure components (their chemical and physical properties) and on the proper choice of the synthesis method. Several examples of the different approaches such as in situ and ex situ, bottom-up and top-down, are reviewed. At the same time, even if the synthesis of heterostructured photoactive materials seems to be successful, strong experimental physical evidence demonstrating true heterojunction formation are required. A possibility for obtaining such evidence using different physical techniques is discussed. Particularly, it is demonstrated that the ability of optical spectroscopy to study heterostructured materials is in fact very limited. At the same time, such experimental techniques as high-resolution transmission electron microscopy (HRTEM) and electrophysical methods (work function measurements and impedance spectroscopy) present a true signature of heterojunction formation. Therefore, whatever the purpose of heterostructure formation and studies is, the application of HRTEM and electrophysical methods is necessary to confirm that formation of the heterojunction was successful

Editorial: Special Issue on Photocatalytic Nanocomposite Materials (PNMs)

This Special Issue titled “Photocatalytic Nanocomposite Materials” (PNMs) is devoted to the research into new-generation PNMs, particularly for the processes of solar radiation energy conversion with its focus lying on the physicochemical principles of creating new materials with purposeful properties for their specific applications [...

Silicon-Compatible Memristive Devices Tailored by Laser and Thermal Treatments

Nowadays, memristors are of considerable interest to researchers and engineers due to the promise they hold for the creation of power-efficient memristor-based information or computing systems. In particular, this refers to memristive devices based on the resistive switching phenomenon, which in most cases are fabricated in the form of metal–insulator–metal structures. At the same time, the demand for compatibility with the standard fabrication process of complementary metal–oxide semiconductors makes it relevant from a practical point of view to fabricate memristive devices directly on a silicon or SOI (silicon on insulator) substrate. Here we have investigated the electrical characteristics and resistive switching of SiOx- and SiNx-based memristors fabricated on SOI substrates and subjected to additional laser treatment and thermal treatment. The investigated memristors do not require electroforming and demonstrate a synaptic type of resistive switching. It is found that the parameters of resistive switching of SiOx- and SiNx-based memristors on SOI substrates are remarkably improved. In particular, the laser treatment gives rise to a significant increase in the hysteresis loop in I–V curves of SiNx-based memristors. Moreover, for SiOx-based memristors, the thermal treatment used after the laser treatment produces a notable decrease in the resistive switching voltage