Epitaxial strain modulated electronic properties of interface controlled nickelate superlattice

Perovskite nickelate heterostructure consisting of single unit cell of EuNiO$_3$ and LaNiO$_3$ have been grown on a set of single crystalline substrates by pulsed laser interval deposition to investigate the effect of epitaxial strain on electronic and magnetic properties at the extreme interface limit. Despite the variation of substrate in-plane lattice constants and lattice symmetry, the structural response to heterostructuring is primarily controlled by the presence of EuNiO$_3$ layer. In sharp contrast to bulk LaNiO$_3$ or EuNiO$_3$, the superlattices grown under tensile strains exhibit metal to insulator transition (MIT) below room temperature. The onset of magnetic and electronic transitions associated with the MIT can be further separated by application of large tensile strain. Furthermore, these transitions can be entirely suppressed by very small compressive strain. X-ray resonant absorption spectroscopy measurements reveal that such strain-controlled MIT is directly linked to strain induced self-doping effect without any chemical doping.Comment: Accepted in Phys. Rev.

Epitaxial growth of (111)-oriented LaAlO3_3/LaNiO3_3 ultra-thin superlattices

The epitaxial stabilization of a single layer or superlattice structures composed of complex oxide materials on polar (111) surfaces is severely burdened by reconstructions at the interface, that commonly arise to neutralize the polarity. We report on the synthesis of high quality LaNiO$_3$/mLaAlO$_3$ pseudo cubic (111) superlattices on polar (111)-oriented LaAlO$_3$, the proposed complex oxide candidate for a topological insulating behavior. Comprehensive X-Ray diffraction measurements, RHEED, and element specific resonant X-ray absorption spectroscopy affirm their high structural and chemical quality. The study offers an opportunity to fabricate interesting interface and topology controlled (111) oriented superlattices based on ortho-nickelates

Synthesis and electronic properties of Ruddlesden-Popper strontium iridate epitaxial thin films stabilized by control of growth kinetics

We report on the selective fabrication of high-quality Sr$_2$IrO$_4$ and SrIrO$_3$ epitaxial thin films from a single polycrystalline Sr$_2$IrO$_4$ target by pulsed laser deposition. Using a combination of X-ray diffraction and photoemission spectroscopy characterizations, we discover that within a relatively narrow range of substrate temperature, the oxygen partial pressure plays a critical role in the cation stoichiometric ratio of the films, and triggers the stabilization of different Ruddlesden-Popper (RP) phases. Resonant X-ray absorption spectroscopy measurements taken at the Ir $L$-edge and the O $K$-edge demonstrate the presence of strong spin-orbit coupling, and reveal the electronic and orbital structures of both compounds. These results suggest that in addition to the conventional thermodynamics consideration, higher members of the Sr$_{n+1}$Ir$_n$O$_{3n+1}$ series can possibly be achieved by kinetic control away from the thermodynamic limit. These findings offer a new approach to the synthesis of ultra-thin films of the RP series of iridates and can be extended to other complex oxides with layered structure.Comment: 7 pages, 6 figure