Capture numbers and islands size distributions in models of submonolayer surface growth

The capture numbers entering the rate equations (RE) for submonolayer film growth are determined from extensive kinetic Monte Carlo (KMC) simulations for simple representative growth models yielding point, compact, and fractal island morphologies. The full dependence of the capture numbers on island size, and on both the coverage and the D/F ratio between the adatom diffusion coefficient D and deposition rate F is determined. Based on this information, the RE are solved to give the RE island size distribution (RE-ISD). The RE-ISDs are shown to agree well with the corresponding KMC-ISDs for all island morphologies. For compact morphologies, however, this agreement is only present for coverages smaller than about 5% due to a significantly increased coalescence rate compared to fractal morphologies. As found earlier, the scaled KMC-ISDs as a function of scaled island size approach, for fixed coverage, a limiting curve for D/F going to infinity. Our findings provide evidence that the limiting curve is independent of the coverage for point islands, while the results for compact and fractal island morphologies indicate a dependence on the coverage.Comment: 13 pages, 12 figure

Spiral Growth and Step Edge Barriers

The growth of spiral mounds containing a screw dislocation is compared to the growth of wedding cakes by two-dimensional nucleation. Using phase field simulations and homoepitaxial growth experiments on the Pt(111) surface we show that both structures attain the same characteristic large scale shape when a significant step edge barrier suppresses interlayer transport. The higher vertical growth rate observed for the spiral mounds on Pt(111) reflects the different incorporation mechanisms for atoms in the top region and can be formally represented by an enhanced apparent step edge barrier.Comment: 11 pages, 4 figures, partly in colo

Re-entrant Layer-by-Layer Etching of GaAs(001)

We report the first observation of re-entrant layer-by-layer etching based on {\it in situ\/} reflection high-energy electron-diffraction measurements. With AsBr$_3$ used to etch GaAs(001), sustained specular-beam intensity oscillations are seen at high substrate temperatures, a decaying intensity with no oscillations at intermediate temperatures, but oscillations reappearing at still lower temperatures. Simulations of an atomistic model for the etching kinetics reproduce the temperature ranges of these three regimes and support an interpretation of the origin of this phenomenon as the site-selectivity of the etching process combined with activation barriers to interlayer adatom migration.Comment: 11 pages, REVTeX 3.0. Physical Review Letters, in press

К вопросу состава гранатов во вмещающих породах и рудах месторождения Эльдорадо

На основании изучения гранатов во вмещающих породах и рудах месторождения Эльдорадо сделан вывод о том, что формирование его происходило на фоне падающих температур и давлений

Island size distributions in submonolayer growth: successful prediction by mean field theory with coverage dependent capture numbers

We show that mean-field rate equations for submonolayer growth can successfully predict island size distributions in the pre-coalescence regime if the full dependence of capture numbers on both the island size and the coverage is taken into account. This is demonstrated by extensive Kinetic Monte Carlo simulations for a growth kinetics with hit and stick aggregation. A detailed analysis of the capture numbers reveals a nonlinear dependence on the island size for small islands. This nonlinearity turns out to be crucial for the successful prediction of the island size distribution and renders an analytical treatment based on a continuum limit of the mean-field rate equations difficult.Comment: 4 pages, 4 figue

Two Dimensional Ir-Cluster Lattices on Moir\'e of Graphene with Ir(111)

Lattices of Ir clusters have been grown by vapor phase deposition on graphene moir\'{e}s on Ir(111). The clusters are highly ordered, spatially and thermally stable below 500K. Their narrow size distribution is tunable from 4 to about 130 atoms. A model for cluster binding to the graphene is presented based on scanning tunneling microscopy and density functional theory. The proposed binding mechanism suggests that similar cluster lattices might be grown of materials other than Ir.Comment: Submitted to PRL on 27Apr0

Spiral Growth and Step Edge Barriers

The growth of spiral mounds containing a screw dislocation is compared to the growth of wedding cakes by two-dimensional nucleation. Using phase field simulations and homoepitaxial growth experiments on the Pt(111) surface we show that both structures attain the same characteristic large scale shape when a significant step edge barrier suppresses interlayer transport. The higher vertical growth rate observed for the spiral mounds on Pt(111) reflects the different incorporation mechanisms for atoms in the top region and can be formally represented by an enhanced apparent step edge barrier.Comment: 11 pages, 4 figures, partly in colo

Coarsening scenarios in unstable crystal growth

Crystal surfaces may undergo thermodynamical as well kinetic, out-of-equilibrium instabilities. We consider the case of mound and pyramid formation, a common phenomenon in crystal growth and a long-standing problem in the field of pattern formation and coarsening dynamics. We are finally able to attack the problem analytically and get rigorous results. Three dynamical scenarios are possible: perpetual coarsening, interrupted coarsening, and no coarsening. In the perpetual coarsening scenario, mound size increases in time as L=t^n, where the coasening exponent is n=1/3 when faceting occurs, otherwise n=1/4.Comment: Changes in the final part. Accepted for publication in Phys. Rev. Let

Breakdown of step-flow growth in unstable homoepitaxy

Two mechanisms for the breakdown of step flow growth, in the sense of the appearance of steps of opposite sign to the original vicinality, are studied by kinetic Monte Carlo simulations and scaling arguments. The first mechanism is the nucleation of islands on the terraces, which leads to mound formation if interlayer transport is sufficiently inhibited. The second mechanism is the formation of vacancy islands due to the self-crossing of strongly meandering steps. The competing roles of the growth of the meander amplitude and the synchronization of the meander phase are emphasized. The distance between vacancy islands along the step direction appears to be proportional to the square of the meander wavelengthComment: 7 pages, 9 figure

Loss of control in pattern-directed nucleation: a theoretical study

The properties of template-directed nucleation are studied close to the transition where full nucleation control is lost and additional nucleation occurs beyond the pre-patterned regions. First, kinetic Monte Carlo simulations are performed to obtain information on a microscopic level. Here the experimentally relevant cases of 1D stripe patterns and 2D square lattice symmetry are considered. The nucleation properties in the transition region depend in a complex way on the parameters of the system, i.e. the flux, the surface diffusion constant, the geometric properties of the pattern and the desorption rate. Second, the properties of the stationary concentration field in the fully controlled case are studied to derive the remaining nucleation probability and thus to characterize the loss of nucleation control. Using the analytically accessible solution of a model system with purely radial symmetry, some of the observed properties can be rationalized. A detailed comparison to the Monte Carlo data is included