Nonlinear Inverse Spin Galvanic Effect in Anisotropic Disorder-free Systems

Spin transport phenomena in solid materials suffer limitations from spin relaxation associated to disorder or lack of translational invariance. Ultracold atoms, free of that disorder, can provide a platform to observe phenomena beyond the usual two-dimensional electron gas. By generalizing the approach used for isotropic two-dimensional electron gases, we theoretically investigate the inverse spin galvanic effect in the two-level atomic system in the presence of anisotropic Rashba-Dresselhaus spin-orbit couplings (SOC) and external magnetic field. We show that the combination of the SOC results in an asymmetric case: the total spin polarization considered for a small momentum has a longer spin state than in a two-dimensional electron gas when the SOC field prevails over the external electric field. Our results can be relevant for advancing experimental and theoretical investigations in spin dynamics as a basic approach for studying spin state control

Theory of the inverse spin galvanic effect in quantum wells

The understanding of the fundamentals of spin and charge densities and currents interconversion by spin-orbit coupling can enable efficient applications beyond the possibilities offered by conventional electronics. For this purpose we consider various forms of the frequency-dependent inverse spin galvanic effect (ISGE) in semiconductor quantum wells and epilayers taking into account the cubic in the electron momentum spin-orbit coupling in the Rashba and Dresselhaus forms, concentrating on the current-induced spin polarization (CISP). We find that including the cubic terms qualitatively explains recent findings of the CISP in InGaAs epilayers being the strongest if the internal spin-orbit coupling field is the smallest and vice versa (Norman et . 2014, Luengo et al. 2017), in contrast to the common understanding. Our results provide a promising framework for the control of spin transport in future spintronics devices.Comment: 13 pages, 12 figure

Theory of the inverse spin galvanic effect in quantum wells

The understanding of the fundamentals of spin and charge densities and currents interconversion by spin-orbit coupling can enable efficient applications beyond the possibilities offered by conventional electronics. For this purpose we consider various forms of the frequency-dependent inverse spin galvanic effect in semiconductor quantum wells and epilayers taking into account the cubic in the electron momentum spin-orbit coupling in the Rashba and Dresselhaus forms, concentrating on the current-induced spin polarization (CISP). We find that including the cubic terms qualitatively explains recent findings of the CISP in InGaAs epilayers being the strongest if the internal spin-orbit coupling field is the smallest and vice versa [Norman, Phys. Rev. Lett. 112, 056601 (2014)PRLTAO0031-900710.1103/PhysRevLett.112.056601; Luengo-Kovac, Phys. Rev. B 96, 195206 (2017)2469-995010.1103/PhysRevB.96.195206], in contrast to the common understanding. Our results provide a promising framework for the control of spin transport in future spintronics devices