ŽIVOTNE I AKADEMSKE AKTIVNOSTI ZASLUŽNIH I UMIROVLJENIH PROFESORA SVEUČILIŠTA U MARIBORU

Higher education lecturers go through a long developmental path from graduate students to academic title of professor. On this path, the most delicate period is the retirement. The age of 60 or 65, which is approximately the same as the retirement age in most developed countries, is supposed to be the onset of old age. Today, when we live longer and healthier, irreparable damage would occur if society and the state didn’t take advantage of the knowledge, wisdom and skills that senior professors have accumulated throughout their careers. The vast majority of senior professors could still contribute and participate in the development of society. In our article, we presented the results of a survey regarding the academic and life activities of senior professors, members of the Center for Retired and Distinguished higher education teachers of the University of Maribor. The results showed that the vast majority of retired and professors emeriti were still active in academic life and contributed to the development and functioning of the University.Visokoškolski učitelji prolaze dugi razvojni put od diplomanta do profesora. Na tom putu je jedno od najdelikatnijih razdoblja odlazak u mirovinu. Starost od 60 ili 65 godina, otprilike ista kao i starost za umirovljenje u većini razvijenih zemalja, označava početak starosti. Danas, kada živimo duže i zdravije, događa se nepopravljiva šteta ako društvo i država ne iskoriste znanje, mudrost i vještine koje je starija generacija akademika akumulirala tijekom svoje karijere. Velika većina starijih profesora može doprinijeti i sudjelovati u razvoju društva. U ovom članku prikazujemo rezultate istraživanja o akademskim i životnim aktivnostima članova Centra za umirovljene i zaslužne profesore Sveučilišta u Mariboru. Rezultati istraživanja pokazuju da je velika većina umirovljenih i zaslužnih profesora aktivna u akademskom životu i konstruktivno doprinosi razvoju i djelovanju Sveučilišta

GisaxStudio—An Open Platform for Analysis and Simulation of GISAXS from 3D Nanoparticle Lattices

Grazing-incidence small-angle X-ray scattering (GISAXS) is a powerful method for the structural analysis of ordered arrays of nanoparticles, quantum dots, or similar objects. However, for the correct interpretation of the measured GISAXS intensity distributions, a proper data analysis, including a suitable model, is required. Here, we demonstrate a software platform, GisaxStudio, aimed at the analysis and simulation of 2D GISAXS intensity distributions from ordered lattices of different nanoparticles. It contains several models that satisfactorily describe the GISAXS from 3D lattices or crystals of nanoparticles prepared by the self-assembly processes, pre-pattering, or ion-beam interaction with the material within their tracks. It also supports different shapes of nanoparticles, including core-shell structure with the center of core possibly displaced from the center of the shell. The software is very useful for fast and accurate GISAXS data analysis

Structural, Optical and Electrical Properties of Al+MoO3 and Au+MoO3 Thin Films Prepared by Magnetron Codeposition

Structural, optical and electrical properties of Al+MoO3 and Au+MoO3 thin films prepared by simultaneous magnetron sputtering deposition were investigated. The influence of MoO3 sputtering power on the Al and Au nanoparticle formation and spatial distribution was explored. We demonstrated the formation of spatially arranged Au nanoparticles in the MoO3 matrix, while Al incorporates in the MoO3 matrix without nanoparticle formation. The dependence of the Au nanoparticle size and arrangement on the MoO3 sputtering power was established. The Al-based films show a decrease of overall absorption with an Al content increase, while the Au-based films have the opposite trend. The transport properties of the investigated films also are completely different. The resistivity of the Al-based films increases with the Al content, while it decreases with the Au content increase. The reason is a different transport mechanism that occurs in the films due to their different structural properties. The choice of the incorporated material (Al or Au) and its volume percentage in the MoO3 matrix enables the design of materials with desirable optical and electrical characteristics for a variety of applications. © 2021 by the authors

Deposition of Thin Alumina Films Containing 3D Ordered Network of Nanopores on Porous Substrates

Self-supporting thin films containing nanopores are very promising materials for use for multiple applications, especially in nanofiltration. Here, we present a method for the production of nanomembranes containing a 3D ordered network of nanopores in an alumina matrix, with a diameter of about 1 nm and a body centered tetragonal structure of the network nodes. The material is produced by the magnetron sputtering deposition of a 3D ordered network of Ge nanowires in an alumina matrix, followed by a specific annealing process resulting in the evaporation of Ge. We demonstrate that the films can be easily grown on commercially available alumina substrates containing larger pores with diameters between 20 and 400 nm. We have determined the minimal film thickness needed to entirely cover the larger pores. We believe that these films have the potential for applications in the fields of filtration, separation and sensin

Ge/Al and Ge/Si3N4/Al Core/Shell Quantum Dot Lattices in Alumina: Boosting the Spectral Response by Tensile Strain

We investigated the production conditions and optoelectrical properties of thin film material consisting of regularly ordered core/shell Ge/Al and Ge/Si3N4/Al quantum dots (QDs) in an alumina matrix. The materials were produced by self– assembled growth achieved by means of multilayer magnetron sputtering deposition. We demonstrated the successful fabrication of well-ordered 3D lattices of Ge/Al and Ge/Si3N4/Al core/shell quantum dots with a body-centred tetragonal arrangement within the Al2O3 matrix. The addition of shells to the Ge core enables a strong tuning of the optical and electrical properties of the material. An Al shell induces a bandgap shift toward smaller energies, and, in addition, it prevents Ge oxidation. The addition of a thin Si3N4 shell induces huge changes in the material spectral response, i.e., in the number of extracted excitons produced by a single photon. It increases both the absolute value and the width of the spectral response. For the best sample, we achieved an enhancement of over 250% of the produced number of excitons in the measured energy range. The observed changes are, as it seems, the consequence of the large tensile strain in Ge QDs which is induced by the Si3N4 shell addition and which is measured to be about 3% for the most strained QDs. The tensile strain causes activation of the direct bandgap of germanium, which has a very strong effect on the spectral response of the material

Multiple exciton generation in 3D ordered networks of Ge quantum wires in alumina matrix

Thin films containing 3D-ordered semiconductor quantum wires offer a great tool to improve the properties of photosensitive devices. In the present work, we investigate the photogenerated current in thin films consisting of an interconnected 3D-ordered network of Ge quantum wires in an alumina matrix. The films are prepared using nitrogen-assisted magnetron sputtering co-deposition of Ge and Al2O3. We demonstrate a strong photocurrent generation in the films, much stronger than in similar films containing Ge quantum dots. The enhanced photocurrent generation is the consequence of the multiple exciton generation and the films’ specific structure that allows for efficient carrier transport. Thin film with the largest nitrogen content showed enhanced performance compared to other thin films with 1.6 excitons created after absorption of a single photon at an energy nearly equal to the double bandgap value. The bandgap value depends on the geometrical properties of the quantum wires, and it is close to the maximum of the solar irradiance in this case. In addition, we show that the multiple exciton generation is the most pronounced at the photon energy values equal to multiple values of the thin film bandgap