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    Role of magnetic ions in the thermal Hall effect of the paramagnetic insulator TmVO4_{4}

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    In a growing number of materials, phonons have been found to generate a thermal Hall effect, but the underlying mechanism remains unclear. Inspired by previous studies that revealed the importance of Tb3+^{3+} ions in generating the thermal Hall effect of Tb2_{2}Ti2_{2}O7_{7}, we investigated the role of Tm3+^{3+} ions in TmVO4_{4}, a paramagnetic insulator with a different crystal structure. We observe a negative thermal Hall conductivity in TmVO4_{4} with a magnitude such that the Hall angle, ∣κxy|\kappa_{xy}/κxx∣\kappa_{xx}|, is approximately 1 x 10−3^{-3} at HH = 15 T and TT = 20 K, typical for a phonon-generated thermal Hall effect. In contrast to the negligible κxy\kappa_{xy} found in Y2_{2}Ti2_{2}O7_{7}, we observe a negative κxy\kappa_{xy} in YVO4_{4} with a Hall angle of magnitude comparable to that of TmVO4_{4}. This shows that the Tm3+^{3+} ions are not essential for the thermal Hall effect in this family of materials. Interestingly, at an intermediate Y concentration of 30 % in Tm1−x_{1-x}Yx_{x}VO4_{4}, κxy\kappa_{xy} was found to have a positive sign, pointing to the possible importance of impurities in the thermal Hall effect of phonons
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