Kinetic and Potential Sputtering of Lunar Regolith: Contribution of Solar-Wind Heavy Ions

Sputtering of lunar regolith by protons as well as solar-wind heavy ions is considered. From preliminary measurements of H+, Ar+1, Ar+6 and Ar+9 ion sputtering of JSC-1A AGGL lunar regolith simulant at solar wind velocities, and TRIM simulations of kinetic sputtering yields, the relative contributions of kinetic and potential sputtering contributions are estimated. An 80-fold enhancement of oxygen sputtering by Ar+ over same-velocity H+, and an additional x2 increase for Ar+9 over same-velocity Ar+ was measured. This enhancement persisted to the maximum fluences investigated is approximately 1016/cm (exp2). Modeling studies including the enhanced oxygen ejection by potential sputtering due to the minority heavy ion multicharged ion solar wind component, and the kinetic sputtering contribution of all solar wind constituents, as determined from TRIM sputtering simulations, indicate an overall 35% reduction of near-surface oxygen abundance. XPS analyses of simulant samples exposed to singly and multicharged Ar ions show the characteristic signature of reduced (metallic) Fe, consistent with the preferential ejection of oxygen atoms that can occur in potential sputtering of some metal oxides

Comparison of the physical, chemical and electrical properties of ALD Al2O3 on c- and m-plane GaN

This study compares the physical, chemical and electrical properties of Al[subscript 2]O[subscript 3] thin films deposited on gallium polar c- and nonpolar m -plane GaN substrates by atomic layer deposition (ALD). Correlations were sought between the film's structure, composition, and electrical properties. The thickness of the Al[subscript 2]O[subscript 3] films was 19.2 nm as determined from a Si witness sample by spectroscopic ellipsometry. The gate dielectric was slightly aluminum-rich (Al:O=1:1.3) as measured from X-ray photoelectron spectroscopy (XPS) depth profile, and the oxide-semiconductor interface carbon concentration was lower on c -plane GaN. The oxide's surface morphology was similar on both substrates, but was smoothest on c -plane GaN as determined by atomic force microscopy (AFM). Circular capacitors (50-300 μm diameter) with Ni/Au (20/100 nm) metal contacts on top of the oxide were created by standard photolithography and e-beam evaporation methods to form metal-oxide-semiconductor capacitors (MOSCAPs). The alumina deposited on c -plane GaN showed less hysteresis (0.15 V) than on m -plane GaN (0.24 V) in capacitance-voltage (CV) characteristics, consistent with its better quality of this dielectric as evidenced by negligible carbon contamination and smooth oxide surface. These results demonstrate the promising potential of ALD Al[subscript 2]O[subscript 3] on c -plane GaN, but further optimization of ALD is required to realize the best properties of Al[subscript 2]O[subscript 3] on m -plane GaN

Effect of GaN surface treatment on Al2O3/n-GaN MOS capacitors

Citation: Hossain, T., Wei, D., Edgar, J. H., Garces, N. Y., Nepal, N., Hite, J. K., . . . Meyer H.M, III. (2015). Effect of GaN surface treatment on Al2O3/n-GaN MOS capacitors. Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, 33(6). doi:10.1116/1.4931793The surface preparation for depositing Al2O3 for fabricating Au/Ni/Al2O3/n-GaN (0001) metal oxide semiconductor (MOS) capacitors was optimized as a step toward realization of high performance GaN MOSFETs. The GaN surface treatments studied included cleaning with piranha (H2O2:H2SO4 = 1:5), (NH4)2S, and 30% HF etches. By several metrics, the MOS capacitor with the piranha-etched GaN had the best characteristics. It had the lowest capacitance–voltage hysteresis, the smoothest Al2O3 surface as determined by atomic force microscopy (0.2 nm surface roughness), the lowest carbon concentration (∼0.78%) at the Al2O3/n-GaN interface (from x-ray photoelectron spectroscopy), and the lowest oxide-trap charge (QT = 1.6 × 1011 cm−2eV−1). Its interface trap density (Dit = 3.7 × 1012 cm−2eV−1), as measured with photon-assisted capacitance– voltage method, was the lowest from conduction band-edge to midgap

The dynamical Green's function and an exact optical potential for electron-molecule scattering including nuclear dynamics

We derive a rigorous optical potential for electron-molecule scattering including the effects of nuclear dynamics by extending the common many-body Green's function approach to optical potentials beyond the fixed-nuclei limit for molecular targets. Our formalism treats the projectile electron and the nuclear motion of the target molecule on the same footing whereby the dynamical optical potential rigorously accounts for the complex many-body nature of the scattering target. One central result of the present work is that the common fixed-nuclei optical potential is a valid adiabatic approximation to the dynamical optical potential even when projectile and nuclear motion are (nonadiabatically) coupled as long as the scattering energy is well below the electronic excitation thresholds of the target. For extremely low projectile velocities, however, when the cross sections are most sensitive to the scattering potential, we expect the influences of the nuclear dynamics on the optical potential to become relevant. For these cases, a systematic way to improve the adiabatic approximation to the dynamical optical potential is presented that yields non-local operators with respect to the nuclear coordinates.Comment: 22 pages, no figures, accepted for publ., Phys. Rev.

Structural Phase Transition at High Temperatures in Solid Molecular Hydrogen and Deuterium

We study the effect of temperature up to 1000K on the structure of dense molecular para-hydrogen and ortho-deuterium, using the path-integral Monte Carlo method. We find a structural phase transition from orientationally disordered hexagonal close packed (hcp) to an orthorhombic structure of Cmca symmetry before melting. The transition is basically induced by thermal fluctuations, but quantum fluctuations of protons (deuterons) are important in determining the transition temperature through effectively hardening the intermolecular interaction. We estimate the phase line between hcp and Cmca phases as well as the melting line of the Cmca solid.Comment: 8 pages, 7 figures; accepted in Phys. Rev.

Inhomogeneous nucleation in quark hadron phase transition

The effect of subcritical hadron bubbles on a first-order quark-hadron phase transition is studied. These subcritical hadron bubbles are created due to thermal fluctuations, and can introduce a finite amount of phase mixing (quark phase mixed with hadron phase) even at and above the critical temperature. For reasonable choices of surface tension and correlation length, as obtained from the lattice QCD calculations, we show that the amount of phase mixing at the critical temperature remains below the percolation threshold. Thus, as the system cools below the critical temperature, the transition proceeds through the nucleation of critical-size hadron bubbles from a metastable quark-gluon phase (QGP), within an inhomogeneous background populated by an equilibrium distribution of subcritical hadron bubbles. The inhomogeneity of the medium results in a substantial reduction of the nucleation barrier for critical bubbles. Using the corrected nucleation barrier, we estimate the amount of supercooling for different parameters controlling the phase transition, and briefly discuss its implications to cosmology and heavy-ion collisions.Comment: LaTeX, 14 pages with 8 Postscript figures. Discussion added in introduction and conclusion, Fig. 8 added, few more references added, Typographical errors corrected. Version to appear in Phys. Rev.

Negative impacts of invasive predators used as biological control agents against the pest snail Lissachatina fulica: the snail Euglandina ‘rosea’ and the flatworm Platydemus manokwari

Since 1955 snails of the Euglandina rosea species complex and Platydemus manokwari flatworms were widely introduced in attempted biological control of giant African snails (Lissachatina fulica) but have been implicated in the mass extinction of Pacific island snails. We review the histories of the 60 introductions and their impacts on L. fulica and native snails. Since 1993 there have been unofficial releases of Euglandina within island groups. Only three official P. manokwari releases took place, but new populations are being recorded at an increasing rate, probably because of accidental introduction. Claims that these predators controlled L. fulica cannot be substantiated; in some cases pest snail declines coincided with predator arrival but concomitant declines occurred elsewhere in the absence of the predator and the declines in some cases were only temporary. In the Hawaiian Islands, although there had been some earlier declines of native snails, the Euglandina impacts on native snails are clear with rapid decline of many endemic Hawaiian Achatinellinae following predator arrival. In the Society Islands, Partulidae tree snail populations remained stable until Euglandina introduction, when declines were extremely rapid with an exact correspondence between predator arrival and tree snail decline. Platydemus manokwari invasion coincides with native snail declines on some islands, notably the Ogasawara Islands of Japan, and its invasion of Florida has led to mass mortality of Liguus spp. tree snails. We conclude that Euglandina and P. manokwari are not effective biocontrol agents, but do have major negative effects on native snail faunas. These predatory snails and flatworms are generalist predators and as such are not suitable for biological control

Properties of neutron-rich nuclei studied by fission product nuclear chemistry. [Review]

A review is given of the properties of neutron-rich nuclei studied by fission product nuclear chemistry and includes the techniques used in elemental isolation and current research on the structure of nuclei near /sup 132/Sn, particle emission, and coexisting structure in both neutron-poor and neutron-rich nuclei. 35 references. (JFP