Antibiotics prescribing practices in oral implantology among jordanian dentists. A cross sectional, observational study

<p>Abstract</p> <p>Background</p> <p>In oral implantology, there is no consensus on the most appropriate regimen for antibiotics prescribing, the decision to prescribe antibiotic is usually based on procedure, patient and clinician related factors. The aim of this study was to investigate the rationale of antibiotic prescribing among Jordanian clinicians who practice oral implantology.</p> <p>Findings</p> <p>The target sample for the study was the 250 Jordan Dental Implant Group members. A five page questionnaire contained 41 questions, both closed and open questions were used to collect data. Statistical analysis was performed using SPSS Windows 16.0 (SPSS Inc., Chicago, IL, USA). Descriptive statistics were generated.</p> <p>The response rate was (70.4%) 176/250. Mean age was 37.2 yrs, 49.4% always prescribe antibiotics mainly oral amoxicillin and amoxicillin with clavulinic acid. Antibiotics prescribing increased with flap raising, multiple implants and sinus or bone augmentation. Patient medical condition, periodontitis and oral hygiene were the most important clinical factors in antibiotic prescribing, non-clinical factors were; reading scientific materials, courses and lectures, knowledge gained during training, and the effectiveness and previous experience with the drug.</p> <p>Conclusions</p> <p>Wide variations in antibiotics types, routes, dose and duration of administration were found. Recommendations on antibiotic prescribing are needed to prevent antibiotic overprescribing and misuse.</p

Pd-vacancy complex in Si identified with the perturbed angular correlation technique

A Pd-vacancy (Pd-V-) complex in Si has been identified with the perturbed angular correlation technique using the radioactive Pd-100 probe produced by recoil implantation. The fraction of Pd probes in the complex has been determined as a function of dopant type (B, P, As, and Sb), dopant concentration (10(15)-6x10(19) cm(-3)) and annealing temperature (21-500 degrees C). The Pd-V- complex, with a unique interaction frequency of 13.1(2) MHz, was observed only in n(+)-Si with a maximum relative fraction of similar to 52% achieved between 200-300 degrees C while a broad distribution of interaction frequencies was apparent in n-, p-, and p(+)-Si. Annealing beyond 300 degrees C yielded a reduction in the Pd-V- fraction with a dissociation energy of 2.5(7) eV. Density functional theory calculations of the electric field gradient for the given defect configuration were consistent with a measured value of 3.58x10(21) V/m(2)

Time Differential Perturbed Angular γγ-Correlation Studies of Diethylenetriaminepentaacetic Acid Complexes with 111\text{}^{111}In and 111m\text{}^{111m}Cd

Static and dynamic electric quadrupole interactions of $\text{}^{111}$Cd in complexes with diethylenetriaminepentaacetic acid were studied by the time differential perturbed angular γγ-correlation technique using two parent isotopes, $\text{}^{111}$In(EC)$\text{}^{111}$Cd and $\text{}^{111 m}$Cd. The measurements were carried out using neutral aqueous solutions of the diethylenetriaminepentaacetic- acid-complexes with initial isotopes at 293 K and 77 K. It was shown that the $\text{}^{111}$Cd-diethylenetriaminepentaacetic-acid-complex in aqueous solutions at pH = 7.0 is characterised by the re-orientational correlation time of 7.7×10$\text{}^{-11}$ s and an electric field gradient V$\text{}_{zz}$=6.7(2)×10$\text{}^{21}$ V/m$\text{}^{2}$ with an asymmetry parameter η=0.75(5). A direct comparison of the electric quadrupole interaction parameters for diethylenetriaminepentaacetic- acid-complexes with $\text{}^{111}$In and $\text{}^{111m}$Cd confirmed the proposal about the fragmentation of the complexes caused by the after-effects of electron capture in $\text{}^{111}$In. An observed difference in the electric quadrupole interaction parameters obtained for the solutions with $\text{}^{111}$In and $\text{}^{111m}$Cd complexes reflects a process of a chemical rearrangement of the complex structure after the In decay into C

Do palladium-dopant pairs exist in silicon?

The local structure and stability of an impurity complex of palladium in silicon has been studied on an atomic scale by perturbed angular correlation spectroscopy using the (100)Pd/Rh probe nuclei. Palladium exists as an acceptor Pd(-) in n-type silicon and donor Pd(+)/(2+) in p-type silicon. Owing to the Coulomb attraction between oppositely charged impurities, the probability of pair formation between palladium and dopants (P, As, Sb and B) seems to be quite favourable. In contrast, the impurity complex of the form Pd(si)-V(si) has been identified in highly doped n-type silicon by its characteristic electric field gradient. The density function theory calculations of electric field gradient (EFG) for Pd(si)-V(si) defect complex were consistent with the experimentally observed EFG. (c) 2005 Elsevier B.V. All rights reserved