Jet Production at CDF

In this talk we present the results from the measurement of the inclusive jet cross section and strong coupling constant based on the CDF Run 1B data, and discuss prospects for Run 2.Comment: 10 pages, 10 figures, using LaTex, Proceedings of `` Corfu 2001: Summer School and Workshop on High Energy Physics, September 1-14, 2001.'

The CDF MiniPlug Calorimeters at the Tevatron

Two MiniPlug calorimeters, designed to measure the energy and lateral position of particles in the pseudorapidity region of 3.6<|eta|<5.1 of the CDF detector, have been installed as part of the Run II CDF upgrade at the Tevatron collider. Detector performance and first results from $\bar pp$ collision data are presented.Comment: Presented at `Frontier Detectors for Frontier Physics; 9th Pisa Meeting on Advanced Detectors', Biodola, Italy, 25-31 May 2003. 2 page

Towards an optimized all lattice-matched InAlAs/InGaAsP/InGaAs multijunction solar cell with efficiency >50%

An approach for an all lattice-matched multijunction solar cell optimized design is presented with 5.807 Å lattice constant, together with a detailed analysis of its performance by means of full device modeling. The simulations show that a (1.93 eV)In_(0.37)Al_(0.63)As/(1.39 eV)In_(0.38)Ga_(0.62)As_(0.57)P_(0.43)/(0.94 eV)In_(0.38)Ga_(0.62)As 3-junction solar cell can achieve efficiencies >51% under 100-suns illumination (with V_(oc) = 3.34 V). As a key proof of concept, an equivalent 3-junction solar cell lattice-matched to InP was fabricated and tested. The independently connected single junction solar cells were also tested in a spectrum splitting configuration, showing similar performance to a monolithic tandem device, with V_(oc) = 1.8 V

GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates

In this study, we report synthesis of large area (> 2 cm^2) crack-free GaInP/GaAs double junction solar cells on 50 mm diameter Ge/Si templates fabricated using wafer bonding and ion implantation induced layer transfer techniques. Defect removal from the template film and film surface prior to epitaxial growth was found to be critical to achievement of high open circuit voltage and efficiency. Cells grown on templates prepared with chemical mechanical polishing in addition a wet chemical etch show comparable performance to control devices grown on bulk Ge substrates. Current-voltage (I–V) data under AM 1.5 illumination indicate that the short circuit current is comparable in templated and control cells, but the open circuit voltage is slightly lower (2.08V vs. 2.16V). Spectral response measurements indicate a drop in open circuit voltage due to a slight lowering of the top GaInP cell band gap. The drop in band gap is due to a difference in the indium composition in the two samples caused by the different miscut (9° vs. 6°) of the two kinds of substrates

Partons and Jets at the LHC

I review some issues related to short distance QCD and its relation to the experimental program of the Large Hadron Collider (LHC) now under construction in Geneva.Comment: Talk at the conference QCD2002 at IIT Kanpur, India, November 2002. Ten pages with 12 figure