65 research outputs found

    β\beta-Ga2_2O3_3 Nano-membrane Negative Capacitance Field-effect Transistor with Steep Subthreshold Slope for Wide Bandgap Logic Applications

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    Steep-slope β\beta-Ga2_2O3_3 nano-membrane negative capacitance field-effect transistors (NC-FETs) are demonstrated with ferroelectric hafnium zirconium oxide in gate dielectric stack. Subthreshold slope less than 60 mV/dec at room temperature is obtained for both forward and reverse gate voltage sweeps with a minimum value of 34.3 mV/dec at reverse gate voltage sweep and 53.1 mV/dec at forward gate voltage sweep at VDSV_{DS}=0.5 V. Enhancement-mode operation with threshold voltage ~0.4 V is achieved by tuning the thickness of β\beta-Ga2_2O3_3 membrane. Low hysteresis of less than 0.1 V is obtained. The steep-slope, low hysteresis and enhancement-mode β\beta-Ga2_2O3_3 NC-FETs are promising as nFET candidate for future wide bandgap CMOS logic applications.Comment: 21 pages, 5 figure
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