65 research outputs found
-GaO Nano-membrane Negative Capacitance Field-effect Transistor with Steep Subthreshold Slope for Wide Bandgap Logic Applications
Steep-slope -GaO nano-membrane negative capacitance
field-effect transistors (NC-FETs) are demonstrated with ferroelectric hafnium
zirconium oxide in gate dielectric stack. Subthreshold slope less than 60
mV/dec at room temperature is obtained for both forward and reverse gate
voltage sweeps with a minimum value of 34.3 mV/dec at reverse gate voltage
sweep and 53.1 mV/dec at forward gate voltage sweep at =0.5 V.
Enhancement-mode operation with threshold voltage ~0.4 V is achieved by tuning
the thickness of -GaO membrane. Low hysteresis of less than 0.1
V is obtained. The steep-slope, low hysteresis and enhancement-mode
-GaO NC-FETs are promising as nFET candidate for future wide
bandgap CMOS logic applications.Comment: 21 pages, 5 figure
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