Path integral simulation of exchange interactions in CMOS spin qubits

The boom of semiconductor quantum computing platforms created a demand for computer-aided design and fabrication of quantum devices. Path integral Monte Carlo (PIMC) can have an important role in this effort because it intrinsically integrates strong quantum correlations that often appear in these multi-electron systems. In this paper we present a PIMC algorithm that estimates exchange interactions of three-dimensional electrically defined quantum dots. We apply this model to silicon metal-oxide-semiconductor (MOS) devices and we benchmark our method against well-tested full configuration interaction (FCI) simulations. As an application, we study the impact of a single charge trap on two exchanging dots, opening the possibility of using this code to test the tolerance to disorder of CMOS devices. This algorithm provides an accurate description of this system, setting up an initial step to integrate PIMC algorithms into development of semiconductor quantum computers.Comment: 10 pages , 5 figure

Control of dephasing in spin qubits during coherent transport in silicon

One of the key pathways towards scalability of spin-based quantum computing systems lies in achieving long-range interactions between electrons and increasing their inter-connectivity. Coherent spin transport is one of the most promising strategies to achieve this architectural advantage. Experimental results have previously demonstrated high fidelity transportation of spin qubits between two quantum dots in silicon and identified possible sources of error. In this theoretical study, we investigate these errors and analyze the impact of tunnel coupling, magnetic field and spin-orbit effects on the spin transfer process. The interplay between these effects gives rise to double dot configurations that include regimes of enhanced decoherence that should be avoided for quantum information processing. These conclusions permit us to extrapolate previous experimental conclusions and rationalize the future design of large scale quantum processors.Comment: 18 pages, 9 figure

Improved Single-Shot Qubit Readout Using Twin RF-SET Charge Correlations

High fidelity qubit readout is critical in order to obtain the thresholds needed to implement quantum error correction protocols and achieve fault-tolerant quantum computing. Large-scale silicon qubit devices will have densely-packed arrays of quantum dots with multiple charge sensors that are, on average, farther away from the quantum dots, entailing a reduction in readout fidelities. Here, we present a readout technique that enhances the readout fidelity in a linear SiMOS 4-dot array by amplifying correlations between a pair of single-electron transistors, known as a twin SET. By recording and subsequently correlating the twin SET traces as we modulate the dot detuning across a charge transition, we demonstrate a reduction in the charge readout infidelity by over one order of magnitude compared to traditional readout methods. We also study the spin-to-charge conversion errors introduced by the modulation technique, and conclude that faster modulation frequencies avoid relaxation-induced errors without introducing significant spin flip errors, favouring the use of the technique at short integration times. This method not only allows for faster and higher fidelity qubit measurements, but it also enhances the signal corresponding to charge transitions that take place farther away from the sensors, enabling a way to circumvent the reduction in readout fidelities in large arrays of qubits

Bounds to electron spin qubit variability for scalable CMOS architectures

Spins of electrons in CMOS quantum dots combine exquisite quantum properties and scalable fabrication. In the age of quantum technology, however, the metrics that crowned Si/SiO2 as the microelectronics standard need to be reassessed with respect to their impact upon qubit performance. We chart the spin qubit variability due to the unavoidable atomic-scale roughness of the Si/SiO$_2$ interface, compiling experiments in 12 devices, and developing theoretical tools to analyse these results. Atomistic tight binding and path integral Monte Carlo methods are adapted for describing fluctuations in devices with millions of atoms by directly analysing their wavefunctions and electron paths instead of their energy spectra. We correlate the effect of roughness with the variability in qubit position, deformation, valley splitting, valley phase, spin-orbit coupling and exchange coupling. These variabilities are found to be bounded and lie within the tolerances for scalable architectures for quantum computing as long as robust control methods are incorporated.Comment: 20 pages, 8 figure

Constraints on the χ_(c1) versus χ_(c2) polarizations in proton-proton collisions at √s = 8 TeV

The polarizations of promptly produced χ_(c1) and χ_(c2) mesons are studied using data collected by the CMS experiment at the LHC, in proton-proton collisions at √s=8  TeV. The χ_c states are reconstructed via their radiative decays χ_c → J/ψγ, with the photons being measured through conversions to e⁺e⁻, which allows the two states to be well resolved. The polarizations are measured in the helicity frame, through the analysis of the χ_(c2) to χ_(c1) yield ratio as a function of the polar or azimuthal angle of the positive muon emitted in the J/ψ → μ⁺μ⁻ decay, in three bins of J/ψ transverse momentum. While no differences are seen between the two states in terms of azimuthal decay angle distributions, they are observed to have significantly different polar anisotropies. The measurement favors a scenario where at least one of the two states is strongly polarized along the helicity quantization axis, in agreement with nonrelativistic quantum chromodynamics predictions. This is the first measurement of significantly polarized quarkonia produced at high transverse momentum