An Investigation of the Role of Radiative and Nonradiative Recombination Processes in InAs/GaAs 1−x Sb x Quantum Dot Solar Cells

An InAs/GaAs0.86 Sb 0.14 quantum dot solar cell and a GaAsSb control cell were investigated using temperature-dependent current density–voltage (J–V), external quantum efficiency, photoluminescence (PL), and electroluminescence (EL) measurements. Thermally activated defect states associated with the GaAsSb matrix material are found to account for the reduction of the performance of the solar cell. The rapid quenching of the PL and EL intensity, along with the shift (above 150 K) of the dominant recombination process during spontaneous emission (EL), further indicates the prevalence of nonradiative processes at elevated temperatures in these systems. These findings are also supported by a reduction in the open-circuit voltage at elevated temperatures in these devices

An investigation of the role of recombination processes in the operation of InAs/GaAsi,Sbx quantum dot solar cells

The electroluminescence and photoluminescence from an InAs/GaAs1-xSbx quantum dot solar cell are investigated as a function of temperature and correlated to the PV characteristics of the cell over the same temperature range. Analysis of the dominant recombination mechanism is shown to change from radiative to non-radiative above ~ 150 K, which is consistent with a reduction in the Jsc (and Voc) at evaluated temperatures in these devices